IP Library Granted Patent US 12666633
Granted Patent B2
US 12666633 · App. 18/394,881 · Granted Jun 23, 2026

Signal transmission device

Inventors: Shuji Asano (Kariya-city, JP); Koichi Yako (Kariya-city, JP); Akira Yamada (Kariya-city, JP)
Assignee: DENSO CORPORATION
H10D1/692H10W42/60H10W70/65H10W70/685H10W90/00H10W72/07252H10W72/07352H10W72/221H10W72/321H10W90/722H10W90/724H10W90/732
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Quick Facts
Patent No.
US 12666633
App. No.
18/394,881
Granted
Jun 23, 2026
Kind
B2
Abstract

A signal transmission device having a capacitor coupler includes a semiconductor substrate, a low voltage circuit region, an insulating film formed on the semiconductor substrate, a lower electrode formed on the semiconductor substrate via the insulating film, and an upper electrode disposed opposite to the lower electrode via the insulating film interposed therebetween. A shield portion includes a conductor to which a low voltage is applied is provided between the lower electrode and the upper electrode and the low voltage circuit region. When a stacking direction of the lower electrode and the upper electrode is defined as a height direction, the shield portion is located higher than the low voltage circuit region and has an eaves part extending on an opposite side with respect to the lower electrode and the upper electrode.

Claims (26)

1 . A signal transmission device having a capacitor coupler, comprising:

a semiconductor substrate;

a low voltage circuit region having a control circuit configured to operate based on a reference potential of low voltage formed in the semiconductor substrate;

an insulating film formed on the semiconductor substrate;

a lower electrode formed on the semiconductor substrate via the insulating film and to which a control signal from the control circuit is output;

an upper electrode disposed opposite to the lower electrode via the insulating film interposed therebetween, forming a capacitor together with the lower electrode and to which a high voltage higher than the low voltage is applied; and

a shield portion formed at least in the insulating film, disposed between the lower electrode and the upper electrode, and the low voltage circuit region, and having a conductor to which a voltage applied in a control circuit operation is applied from the low voltage, wherein

when a stacking direction of the lower electrode and the upper electrode is defined as a height direction, the shield portion is located higher than the low voltage circuit region and has an eaves part extending on an opposite side with respect to the lower electrode and the upper electrode.

2 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the insulating film has a laminated structure of multiple layers,

the shield portion includes a plurality of conductors formed alternately with each layer of the insulating film composed of the plurality of layers, and a vias arranged in a via hole formed in each layer so as to connect the conductor and the vias in the height direction, and

the eaves part is configured by a part of the plurality of conductors extending toward a side opposite to the lower electrode and the upper electrode.

3 . The signal transmission device having a capacitor coupler according to claim 2 , wherein

the eaves part is constituted by the conductor located at the highest position among the plurality of conductors in the height direction.

4 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the upper electrode is thicker than the lower electrode.

5 . The signal transmission device having a capacitor coupler according to claim 1 , further comprising:

a float conductor disposed in the insulating film at a height intermediate between the height of the lower electrode and the height of the upper electrode and having a float potential.

6 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the shield portion is set to a ground potential that is a potential of the semiconductor substrate.

7 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the eaves part has a width corresponding to a distance from an end nearer to the lower electrode and the upper electrode to an end farthest from the lower electrode and the upper electrode, and the width is 10 μm or more.

8 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the eaves part has a width corresponding to a distance from an end nearer to the lower electrode and the upper electrode to an end farthest from the lower electrode and the upper electrode and the width is from 20 to 40 μm.

9 . The signal transmission device having a capacitor coupler according to claim 1 , wherein

the shield portion has a shortest distance from the upper electrode of 13 μm or more.