Method to implant p-type and/or n-type rings in a semiconductor device
According to one aspect of the present disclosure, a semiconductor device includes a substrate having a first type dopant. In some embodiments, the semiconductor device also includes an epitaxial layer above the substrate, having a second type dopant and a top region. In some embodiments, the semiconductor device also includes a trench in the top region of the epitaxial layer; at least one doped ring implanted in the epitaxial layer below the trench; and a dielectric material filling within the trench. In some embodiments, there is a twelve-sided body tie in the epitaxial layer, wherein the sides of the twelve-sided body tie are not all equal to each other.
1 . A semiconductor device, comprising:
a substrate having a first type dopant;
an epitaxial layer above the substrate, having a second type dopant and a top region;
a body tie in the epitaxial layer, wherein the body tie has a plurality of sides not equal to each other;
a trench in the top region of the epitaxial layer;
at least one doped ring implanted in the epitaxial layer below the trench; and
a dielectric material filling within the trench.
2 . The semiconductor device of claim 1 , further comprising an oxide and a gate structure on the dielectric material and the epitaxial layer.
3 . The semiconductor device of claim 1 , wherein the at least one doped ring comprises at least two doped rings having different doping densities from each other.
4 . The semiconductor device of claim 1 , wherein the at least one doped ring is a n-type ring.
5 . The semiconductor device of claim 1 , wherein the at least one doped ring is a p-type ring.
6 . The semiconductor device of claim 1 , wherein the first type dopant is a p-type dopant and wherein the second type dopant is a n-type dopant.
7 . The semiconductor device of claim 1 , wherein the at least one doped ring comprises at least one doped ring with a n-type dopant and at least doped ring with a p-type dopant.
8 . The semiconductor device of claim 1 , wherein the substrate and/or the epitaxial layer comprise a crystalline semiconductor material.
9 . The semiconductor device of claim 8 , wherein the crystalline semiconductor material comprises at least one of Si, Ge, AlGaN, InGaAs, GaAs, InAs, InP, AlN, InN, GaN, SiC, and/or SiGe.
10 . The semiconductor device of claim 1 , wherein the body tie is twelve-sided and formed from a scalene octagon and two elongated rectangles.
11 . The semiconductor device of claim 1 , wherein the at least one doped ring comprises at least two doped rings implanted at different depths in the epitaxial layer.
12 . A semiconductor device, comprising:
a substrate having a first type dopant;
an epitaxial layer above the substrate, having a second type dopant and a top region;
a twelve-sided body tie in the epitaxial layer, wherein sides of the twelve-sided body tie are not all equal to each other;
a trench in the top region of the epitaxial layer;
at least one doped ring implanted in the epitaxial layer below the trench;
a dielectric material filling within the trench; and
an oxide and a gate structure on the dielectric material.
13 . The semiconductor device of claim 12 , wherein the twelve-sided body tie has a width of 0.58 μm.
14 . The semiconductor device of claim 12 , wherein the twelve-sided body tie has a diagonal width of 0.523 μm.
15 . The semiconductor device of claim 12 , wherein the at least one doped ring has different doping densities.
16 . The semiconductor device of claim 12 , wherein the at least one doped ring is n-type and/or p-type.
17 . The semiconductor device of claim 12 , wherein the first type dopant is a p-type dopant and wherein the second type dopant is a n-type dopant.
18 . A semiconductor device, comprising:
a substrate having a first type dopant;
an epitaxial layer above the substrate, having a second type dopant and a top region;
a twelve-sided body tie in the epitaxial layer, wherein sides of the twelve-sided body tie are not all equal to each other;
a dielectric material filling; and
an oxide and a gate structure on top of the epitaxial layer.
19 . The semiconductor device of claim 18 , wherein the twelve-sided body tie has a width of 0.58 μm.
20 . The semiconductor device of claim 18 , wherein the twelve-sided body tie has a diagonal width of 0.523 μm.
21 . The semiconductor device of claim 18 , wherein the first type dopant is a p-type dopant and wherein the second type dopant is a n-type dopant.