Semiconductor device and method for manufacturing the same

1 . A semiconductor device, comprising:

a first electrode;

a second electrode, a direction from the first electrode to the second electrode being along a first direction, the second electrode including a first electrode portion and a second electrode portion connected to the first electrode portion;

a third electrode provided between the first electrode and the second electrode portion;

a semiconductor member, the semiconductor member including

a first semiconductor region of a first conductive type, the first semiconductor region including a first partial region, a second partial region, a third partial region and a fourth partial region, the first partial region being provided between the first electrode and the third electrode in the first direction, a second direction from the first partial region to the second partial region crossing the first direction, a position of the third partial region in the second direction being between a position of the first partial region in the second direction and a position of the second partial region in the second direction, the fourth partial region being provided between the second partial region and the first electrode portion, and

a second semiconductor region of the first conductive type, an impurity concentration of the first conductive type in the second semiconductor region being higher than an impurity concentration of the first conductive type in the first semiconductor region, the second semiconductor region being provided between the third electrode and the first electrode portion in the second direction, the second semiconductor region being provided between the third partial region and the second electrode portion in the first direction;

a first conductive member provided between the first partial region and the third electrode in the first direction, a direction from the first conductive member to the fourth partial region being along the second direction, the first conductive member being electrically connected to the second electrode or being configured to be electrically connected to the second electrode; and

a first insulating member including a first insulating region, a second insulating region, and a third insulating region, the first insulating region being provided between the third electrode and the second semiconductor region, the second insulating region being provided between the semiconductor member and the first conductive member, at least a part of the third insulating region being provided between the first conductive member and the third electrode, the second insulating region including a first face facing the third partial region, the third insulating region including a second face facing the third partial region, the first face including a first end on a side of the second electrode in the first direction, the second face including a second end on a side of the first electrode in the first direction, a second position of the second end in the second direction being different from a first position of the first end in the second direction.

2 . The device according to claim 1 , wherein

a first distance along the second direction between the first conductive member and the first position of the first end is shorter than a second distance along the second direction between the first conductive member and the second position of the second end.

3 . The device according to claim 1 , wherein

a distance between the first position of the first end and the second position of the second end along the second direction is not less than 0.3 times and not more than 2 times a thickness of the first insulating region along the second direction.

4 . The device according to claim 1 , wherein

a step is provided between the first face and the second face.

5 . The device according to claim 1 , wherein

the third insulating region further includes a third face, and

the third face is provided between the first face and the second face and connected to the first face and the second face, and the third face is non-parallel to the first face and non-parallel to the second face.

6 . The device according to claim 1 , wherein

the second semiconductor region is in contact with the first semiconductor region.

7 . The device according to claim 1 , wherein

the first electrode portion is in Schottky contact with the semiconductor member.

8 . The device according to claim 1 , wherein

the first electrode portion is in contact with the second semiconductor region and the fourth portion region, and

the first electrode portion includes at least one selected from the group consisting of Pt, Co, and Ni.

9 . The device according to claim 1 , wherein

the first electrode portion includes a first electrode portion end on a side of the first electrode in the first direction,

the third electrode includes a third electrode end on a side of the first electrode in the first direction,

a position of the third electrode end in the first direction is between a position of the first electrode in the first direction and a position of the first electrode portion end in the first direction.

10 . The device according to claim 1 , wherein

a width of the third electrode along the second direction is wider than a width of the first conductive member along the second direction.

11 . The device according to claim 1 , wherein

the first semiconductor region includes a first semiconductor face, a second semiconductor face, a third semiconductor face, and a fourth semiconductor face,

the third electrode is located between the first semiconductor face and the second semiconductor face in the second direction,

a part of the first insulating member is located between the first semiconductor face and the third electrode,

another part of the first insulating member is located between the third electrode and the second semiconductor face,

the first electrode portion is located between the third semiconductor face and the fourth semiconductor face in the second direction, and

a first width along the second direction between the first semiconductor face and the second semiconductor face is larger than a second width along the second direction between the third semiconductor face and the fourth semiconductor face.

12 . The device according to claim 1 , wherein

the first semiconductor region includes a first semiconductor face, a second semiconductor face, a fifth semiconductor face, and a sixth semiconductor face,

the third electrode is located between the first semiconductor face and the second semiconductor face in the second direction,

a part of the first insulating member is located between the first semiconductor face and the third electrode,

another part of the first insulating member is located between the third electrode and the second semiconductor face,

the first conductive member is located between the fifth semiconductor face and the sixth semiconductor face in the second direction,

further another part of the first insulating member is located between the fifth semiconductor face and the first conductive member,

further another part of the first insulating member is located between the first conductive member and the sixth semiconductor face, and

a first width along the second direction between the first semiconductor face and the second semiconductor face is larger than a third width along the second direction between the fifth semiconductor face and the sixth semiconductor face.

13 . The device according to claim 1 , wherein

a width of the first conductive member along the second direction continuously changes or is constant in the first direction.

14 . The device according to claim 1 , wherein

a width of the second semiconductor region along the second direction is not less than 25 nm and not more than 50 nm.

15 . The device according to claim 1 , further comprising:

a second insulating member, at least a part of the second insulating member being provided between the third electrode and the second electrode portion.