IP Library › Granted Patent US 12666683
Granted Patent B2
US 12666683 · App. 18/151,168 · Granted Jun 23, 2026

Semiconductor device with reduced leakage

Inventor: Motoki Tamura (Kawasaki City, JP)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
H10D64/258H10D30/023H10D30/611H10D64/01H10D64/512H10D62/371
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Quick Facts
Patent No.
US 12666683
App. No.
18/151,168
Granted
Jun 23, 2026
Kind
B2
Abstract

A semiconductor device includes a first well and a second well. The first well is configured to operate as a back gate terminal of a first transistor. The second well is separated from the first well, and is configured to operate as a back gate terminal of a second transistor. Each of a first source/drain terminal of the second transistor, and a first source/drain terminal of the first transistor and the back gate terminal of the first transistor are coupled to each other.

Claims (97)

1 . A method, comprising:

forming a first well above a second well;

forming a third well above the second well;

forming a portion of the second well between the first well and the third well to separate the first well and the third well from each other,

forming a first doped region and a second doped region in the first well;

forming a first gate structure between the first doped region and the second doped region;

forming a third doped region and a fourth doped region in the third well;

forming a second gate structure between the third doped region and the fourth doped region;

coupling the first well to the second doped region and the third doped region;

forming a fifth doped region and a sixth doped region in the first well;

forming a third gate structure between the fifth doped region and the sixth doped region; and

coupling the third gate structure to the second gate structure.

2 . The method of claim 1 , further comprising:

forming a seventh doped region and an eighth doped region in the first well;

forming a fourth gate structure between the seventh doped region and the eighth doped region;

coupling the fourth gate structure to the fifth doped region;

coupling each of the sixth doped region and the eighth doped region to the first well; and

coupling the seventh doped region to the first gate structure.

3 . The method of claim 2 , further comprising:

forming a ninth doped region, a tenth doped region, an eleventh doped region and a twelfth doped region;

forming a fifth gate structure between the ninth doped region and the tenth doped region;

forming a sixth gate structure between the eleventh doped region and the twelfth doped region;

coupling the fifth gate structure to the third gate structure;

coupling the sixth gate structure to the fourth gate structure; and

coupling the eleventh doped region to the first gate structure.

4 . A method, comprising:

forming a substrate;

forming a first well above a second well in the substrate;

forming a third well above the second well;

forming a fourth well separated from the second well in the substrate;

forming a portion of the second well between the first well and the third well to separate the first well and the third well from each other,

forming a first doped region and a second doped region in the first well;

forming a first gate structure between the first doped region and the second doped region; and

forming a third doped region in the fourth well; and

forming a fourth doped region in the third well,

wherein the fourth doped region is coupled to the second doped region,

wherein the third doped region is coupled to the first gate structure.

5 . The method of claim 4 , further comprising:

forming a fifth doped region in the third well; and

forming a second gate structure between the fourth doped region and the fifth doped region.

6 . The method of claim 5 , further comprising:

forming a sixth doped region and a seventh doped region in the first well; and

forming a third gate structure between the sixth doped region and the seventh doped region,

wherein the third gate structure is coupled to the second gate structure.

7 . The method of claim 5 , further comprising:

forming a sixth doped region and a seventh doped region in the fourth well; and

forming a third gate structure between the fourth doped region and the fifth doped region,

wherein the third gate structure is coupled to the second gate structure.

8 . The method of claim 4 , further comprising:

forming a fifth doped region in the fourth well; and

forming a second gate structure between the fifth doped region and the third doped region.

9 . The method of claim 8 , further comprising:

forming a sixth doped region and a seventh doped region in the first well; and

forming a third gate structure between the sixth doped region and the seventh doped region,

the second gate structure is coupled to the third gate structure.

10 . The method of claim 4 , further comprising:

forming a fifth doped region in the third well.

11 . A method, comprising:

forming a substrate;

forming a first well above a second well in the substrate;

forming a third well separated from the second well in the substrate;

forming a first doped region in the first well; and

forming a second doped region in the third well,

wherein the first doped region is coupled to the second doped region, and

the second well surrounds the first well in a layout view.

12 . The method of claim 11 , further comprising:

forming a third doped region and a fourth doped region in the third well; and

forming a first gate structure between the third doped region and the fourth doped region,

wherein the first gate structure is coupled to the second doped region.

13 . The method of claim 12 , further comprising:

forming a fifth doped region and a sixth doped region in the third well; and

forming a second gate structure between the fifth doped region and the sixth doped region,

wherein the first gate structure is coupled to the second gate structure.

14 . The method of claim 12 , further comprising:

forming a fifth doped region and a sixth doped region in the first well; and

forming a second gate structure between the fifth doped region and the sixth doped region,

wherein the second gate structure is coupled to the third doped region.

15 . The method of claim 14 , wherein the first doped region is disposed between the second gate structure and the second doped region.

16 . The method of claim 11 , further comprising:

forming a third doped region in the third well; and

forming a first gate structure between the third doped region and the second doped region,

wherein the first gate structure is disposed between the second doped region and the second well.

17 . The method of claim 16 , further comprising:

forming a fourth well above the second well;

forming a portion of the second well between the first well and the fourth well to separate the first well and the fourth well from each other;

forming a fourth doped region and a fifth doped region in the fourth well; and

forming a second gate structure between the fourth doped region and the fifth doped region,

wherein the second gate structure is coupled to the first gate structure.

18 . The method of claim 17 , wherein the first well is disposed between the fourth well and the third well.

19 . The method of claim 17 , further comprising:

forming a sixth doped region and a seventh doped region in the first well; and

forming a third gate structure between the sixth doped region and the seventh doped region,

wherein the first doped region is coupled to the third gate structure.

20 . The method of claim 11 , further comprising:

forming a first gate structure on the first well; and

forming a second gate structure on the third well,

wherein the first gate structure is coupled to the second gate structure.