Semiconductor device
An IGBT region ( 2 ) and a diode region ( 3 ) are provided on a semiconductor substrate ( 1 ) and have an emitter electrode ( 16 ) on a surface of the semiconductor substrate ( 1 ). A sense IGBT region ( 4 ) is provided on the semiconductor substrate ( 1 ), has a smaller area than that of the IGBT region ( 2 ), and includes a sense emitter electrode ( 20 ) provided on the surface of the semiconductor substrate ( 1 ) and separated from the emitter electrode ( 16 ). A sense diode region ( 3 ) is provided on the semiconductor substrate ( 1 ), has a smaller area than that of the diode region ( 3 ), and includes a sense anode electrode provided on the surface of the semiconductor substrate ( 1 ) and separated from the emitter electrode ( 16 ). The sense diode region ( 3 ) is separated from the IGBT region ( 2 ) by a distance equal to or greater than that of the drift layer ( 8 ).
1 . A semiconductor device comprising:
a semiconductor substrate including a drift layer;
an IGBT region and a diode region which are provided on the semiconductor substrate and have an emitter electrode provided on a surface of the semiconductor substrate;
a sense IGBT region provided on the semiconductor substrate, having a smaller area than an area of the IGBT region, and including a sense emitter electrode provided on the surface of the semiconductor substrate and separated from the emitter electrode; and
a sense diode region provided on the semiconductor substrate, having a smaller area than an area of the diode region, and including a sense anode electrode provided on the surface of the semiconductor substrate and separated from the emitter electrode,
wherein the sense diode region is separated from the IGBT region by a distance equal to or greater than a thickness of the drift layer,
wherein the sense diode region in a top view is positioned within the IGBT region and bounded on three sides by the diode region.
2 . The semiconductor device according to claim 1 , wherein the diode region is positioned in a region within the thickness of the drift layer from the sense diode region.
3 . The semiconductor device according to claim 2 , wherein the semiconductor substrate is divided into a first region and a second region,
the IGBT region and the diode region include a trench gate,
the IGBT region and the diode region are alternately arranged in a stripe shape along the trench gate in a plan view,
repetition of the IGBT region and the diode region is reverse between the first region and the second region,
the sense IGBT region is positioned in the IGBT region of the first region, and
the sense diode region is positioned in the diode region of the second region.
4 . The semiconductor device according to claim 1 , wherein the sense diode region is separated from the sense IGBT region by a distance equal to or greater than the thickness of the drift layer.
5 . The semiconductor device according to claim 1 , wherein the sense IGBT region is separated from the IGBT region by a distance equal to or greater than the thickness of the drift layer.
6 . The semiconductor device according to claim 1 , wherein the semiconductor substrate is formed of a wide-bandgap semiconductor.