Pixel structure and image sensor

1 . A pixel structure, comprising:

a plurality of pixel units adjacent to each other and arranged in an array;

a first optical partition wall arranged between adjacent pixel units; and

a microlens assembly located on an upper side of all the pixel units and opposite to all the pixel units, wherein

each of the pixel units comprises a color filter, a pixel microlens, and a photoelectric conversion layer arranged successively from top to bottom,

the first optical partition wall arranged between the adjacent pixel units extends from an upper surface of the color filter to a lower surface of the photoelectric conversion layer, and

colors of color filters of the adjacent pixel units are different.

2 . The pixel structure according to claim 1 ,

wherein:

at least four of the pixel units are arranged to form a sub-pixel structure,

the pixel structure comprises a plurality of sub-pixel structures,

the microlens assembly comprises a first lens unit, and

the first lens unit is formed by arranging a plurality of first microlenses in a same plane,

wherein the first microlenses are arranged opposite to the sub-pixel structures in a one-to-one correspondence, so that the pixel units opposite to the first microlens are provided with at least two of the color filters of a same color.

3 . The pixel structure according to claim 2 , wherein the sub-pixel structure comprises 4 pixel units, and the 4 pixel units are arranged in a 2×2 matrix form, wherein a pair of diagonally arranged pixel units are provided with the color filters 11 of the same color.

4 . The pixel structure according to claim 2 , wherein the sub-pixel structure comprises 9 pixel units, the 9 pixel units are arranged in a 3×3 matrix form, and among the pixel units distributed on an edge of the matrix, the pixel units arranged opposite to each other are provided with the color filters of the same color.

5 . A pixel structure, comprising:

a plurality of pixel units adjacent to each other and arranged in an array;

a first optical partition wall arranged between adjacent pixel units; and

a microlens assembly located on an upper side of all the pixel units and opposite to all the pixel units,

wherein each of the pixel units comprises a color filter, a pixel microlens, and a photoelectric conversion layer arranged successively from top to bottom, and

colors of color filters of the adjacent pixel units are different,

wherein:

a second optical partition wall is arranged in the pixel unit, the second optical partition wall extends from the color filter to the photoelectric conversion layer, and the second optical partition wall is perpendicular to the photoelectric conversion layer; and

the second optical partition wall divides the pixel unit into at least a first subunit and a second subunit, wherein the first subunit and the second subunit are respectively provided with the color filter and the pixel microlens from top to bottom, and the first subunit and the second subunit share the photoelectric conversion layer.

6 . The pixel structure according to claim 5 , wherein the second optical partition wall is embedded in the photoelectric conversion layer.

7 . The pixel structure according to claim 1 , wherein the microlens assembly comprises at least a second lens unit and a third lens unit arranged successively from top to bottom.

8 . The pixel structure according to claim 7 , wherein the second lens unit is formed by arranging a plurality of second microlenses in a same plane, the third lens unit is formed by arranging a plurality of third microlenses in a same plane, and the second microlens and the third microlens differ in shape and size, differ in shape, or differ in size.

9 . The pixel structure according to claim 7 , wherein manufacturing materials of the second lens unit and the third lens unit are nano materials.

10 . An image sensor, comprising:

a pixel structure, comprising:

a plurality of pixel units adjacent to each other and arranged in an array;

a first optical partition wall arranged between adjacent pixel units; and

a microlens assembly located on an upper side of all the pixel units and opposite to all the pixel units, wherein

each of the pixel units comprises a color filter, a pixel microlens, and a photoelectric conversion layer arranged successively from top to bottom,

the first optical partition wall arranged between the adjacent pixel units extends from an upper surface of the color filter to a lower surface of the photoelectric conversion layer, and

colors of color filters of the adjacent pixel units are different.

11 . The image sensor according to claim 10 ,

wherein:

at least four of the pixel units are arranged to form a sub-pixel structure,

the pixel structure comprises a plurality of sub-pixel structures,

the microlens assembly comprises a first lens unit, and

the first lens unit is formed by arranging a plurality of first microlenses in a same plane,

wherein the first microlenses are arranged opposite to the sub-pixel structures in a one-to-one correspondence, so that the pixel units opposite to the first microlens are provided with at least two of the color filters of a same color.

12 . The image sensor according to claim 11 , wherein the sub-pixel structure comprises 4 pixel units, and the 4 pixel units are arranged in a 2×2 matrix form, wherein a pair of diagonally arranged pixel units are provided with the color filters 11 of the same color.

13 . The image sensor according to claim 11 , wherein the sub-pixel structure comprises 9 pixel units, the 9 pixel units are arranged in a 3×3 matrix form, and among the pixel units distributed on an edge of the matrix, the pixel units arranged opposite to each other are provided with the color filters of the same color.

14 . The image sensor according to claim 10 ,

wherein:

a second optical partition wall is arranged in the pixel unit, the second optical partition wall extends from the color filter to the photoelectric conversion layer, and the second optical partition wall is perpendicular to the photoelectric conversion layer; and

the second optical partition wall divides the pixel unit into at least a first subunit and a second subunit, wherein the first subunit and the second subunit are respectively provided with the color filter and the pixel microlens from top to bottom, and the first subunit and the second subunit share the photoelectric conversion layer.

15 . The image sensor according to claim 14 , wherein the second optical partition wall is embedded in the photoelectric conversion layer.

16 . The image sensor according to claim 10 , wherein the microlens assembly comprises at least a second lens unit and a third lens unit arranged successively from top to bottom.

17 . The image sensor according to claim 16 , wherein the second lens unit is formed by arranging a plurality of second microlenses in a same plane, the third lens unit is formed by arranging a plurality of third microlenses in a same plane, and the second microlens and the third microlens differ in shape and size, differ in shape, or differ in size.

18 . The image sensor according to claim 16 , wherein manufacturing materials of the second lens unit and the third lens unit are nano materials.

19 . The pixel structure according to claim 5 , wherein:

at least four of the pixel units are arranged to form a sub-pixel structure,

the pixel structure comprises a plurality of sub-pixel structures,

the microlens assembly comprises a first lens unit, and

the first lens unit is formed by arranging a plurality of first microlenses in a same plane,

wherein the first microlenses are arranged opposite to the sub-pixel structures in a one-to-one correspondence, so that the pixel units opposite to the first microlens are provided with at least two of the color filters of a same color.