Semiconductor apparatus, imaging apparatus, and manufacturing method of semiconductor apparatus
Parasitic capacitance in a through-silicon via (TSV) is reduced. A semiconductor apparatus includes a given layer. A via vertically penetrates the given layer. A conductor is in contact with an upper surface side material and a lower surface side material of the vertically penetrated layer. The conductor forms, between the conductor and an inside of the via, a cavity portion that vertically penetrates the layer without being in contact with the inside of the via. At least either the upper surface side material or the lower surface side material of the layer is a conductive material, and at least part of the conductive material includes an opening portion for the cavity portion. This opening portion is used to supply an etchant during etching.
1 . A semiconductor apparatus, comprising:
a substrate layer;
a via that vertically penetrates the substrate layer;
an upper surface side material on an upper surface side of the substrate layer;
a lower surface side material on a lower surface side of the substrate layer;
a conductor that is in contact with the upper surface side material and the lower surface side material;
an insulating side wall inside the via;
an insulating layer, wherein
the conductor is inside the via, and
the insulating layer is inside the conductor within the via; and
a cavity portion that vertically penetrates the substrate layer, wherein
the cavity portion is between the conductor and the insulating side wall of the via.
2 . The semiconductor apparatus according to claim 1 , wherein
at least one of the upper surface side material or the lower surface side material includes a conductive material, and
at least a part of the conductive material includes an opening portion for the cavity portion.
3 . The semiconductor apparatus according to claim 1 , wherein
the substrate layer is a semiconductor substrate.
4 . The semiconductor apparatus according to claim 1 , further comprising
an insulating film between the lower surface side material and the substrate layer.
5 . The semiconductor apparatus according to claim 1 , further comprising:
a surrounding trench that vertically penetrates the substrate layer at a circumference of the via.