Light-emitting device and display including the same
A light-emitting device includes a first semiconductor layer having a first conductive type, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type, an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer, and a first plurality of photo-conversion particles provided inside the first semiconductor layer.
1 . A light-emitting device comprising:
a first semiconductor layer having a first conductive type;
an active layer provided on the first semiconductor layer;
a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type;
an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer;
a contact layer provided on a top surface of the second semiconductor layer; and
a plurality of photo-conversion particles comprising first photo-conversation particles provided inside the first semiconductor layer and third photo-conversion particles provided on the contact layer.
2 . The light-emitting device of claim 1 , wherein the first photo-conversion particles are at a distance of at least about 30 nm from the active layer.
3 . The light-emitting device of claim 1 , wherein the plurality of photo-conversion particles further comprises a second plurality of photo-conversion particles provided on the insulating film.
4 . The light-emitting device of claim 1 , wherein a diameter of at least one photo-conversion particle of the plurality of photo-conversion particles is greater than or equal to about 1 nm and less than or equal to about 10 nm.
5 . The light-emitting device of claim 1 , wherein the plurality of photo-conversion particles are configured to amplify an intensity of incident light emitted from the active layer.
6 . The light-emitting device of claim 1 , wherein each of the plurality of photo-conversion particles comprises at least one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al).
7 . The light-emitting device of claim 1 , wherein the first plurality of photo-conversion particles comprise different metals.
8 . The light-emitting device of claim 1 , wherein the first semiconductor layer comprises an n-type semiconductor material, and
wherein the second semiconductor layer comprises a p-type semiconductor material.
9 . The light-emitting device of claim 1 , wherein the contact layer comprises at least one of aluminum, titanium, indium, gold, silver, indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).
10 . The light-emitting device of claim 1 , wherein the insulating film has a thickness of about 30 nm or less.
11 . The light-emitting device of claim 1 , wherein the insulating film comprises silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxide, hafnium oxide, yttrium oxide, or titanium dioxide.
12 . A display comprising:
a display panel comprising:
a light-emitting structure comprising a plurality of light-emitting devices; and
a driving circuit configured to on-off switch the light-emitting structure; and
a controller configured to, in response to receiving an image signal, input an on-off switching signal for the plurality of light-emitting devices to the driving circuit,
wherein each light-emitting device of the plurality of light-emitting devices comprises:
a first semiconductor layer having a first conductive type;
an active layer provided on the first semiconductor layer;
a second semiconductor layer provided on the active layer and having a second conductive type that is electrically opposite to the first conductive type;
an insulating film at least partially surrounding the first semiconductor layer, the active layer, and the second semiconductor layer;
a contact layer provided on a top surface of the second semiconductor layer; and
a plurality of photo-conversion particles comprising first photo-conversation particles provided inside the first semiconductor layer and third photo-conversion particles provided on the contact layer.
13 . The display of claim 12 , wherein the first photo-conversion particles are at a distance of at least 30 nm from the active layer.
14 . The display of claim 12 , wherein the plurality of photo-conversion particles further comprising a second plurality of photo-conversion particles provided on the insulating film.
15 . The display of claim 12 , wherein the plurality of photo-conversion particles are configured to amplify an intensity of incident light emitted from the active layer.
16 . The display of claim 12 , wherein each of the plurality of photo-conversion particles comprises at least one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al).
17 . The display of claim 12 , wherein the plurality of photo-conversion particles comprise different metals.
18 . A light-emitting device, comprising:
a first semiconductor layer having a first conductive type;
an active layer provided on the first semiconductor layer;
a second semiconductor layer provided on the active layer and having a second conductive type;
an insulating film at least partially surrounding at least one of the first semiconductor layer, the second semiconductor layer and the active layer;
a contact layer provided on a top surface of the second semiconductor layer; and
photo-conversion particles comprising at least one first photo-conversion particle provided inside the first semiconductor layer, at least one second photo-conversion particle provided on the insulating film and at least one third photo-conversion particle provided on the contact layer.