Display device using semiconductor light emitting device with reduced surface adsorption during self-assembly
According to the present invention, in a display device comprising a substrate and semiconductor light emitting devices mounted on the substrate, the semiconductor light emitting devices are characterized in that the semiconductor light emitting devices include a protective layer and a pattern layer having one surface in contact with the protective layer, another surface in contact with the substrate, and a concave-convex structure on another surface, through such a structure, it is possible to minimize the phenomenon that the semiconductor light emitting device is adsorbed to the surface of the substrate other than the cell.
1 . A display device comprising:
a substrate; and
a plurality of semiconductor light emitting devices mounted on the substrate,
wherein each of the semiconductor light emitting devices comprises a protective layer and a pattern layer,
wherein the pattern layer comprises a first layer and a second layer,
wherein the first layer is positioned between the protective layer and the second layer and includes a first surface and a second surface, wherein the first surface of the first layer faces the protective layer and is in contact with the protective layer,
wherein the second layer is shaped to define a concave-convex structure having a first surface and an opposing second surface, and
wherein the first surface of the second layer is in contact with at least a partial region of the second surface of the first layer and the second surface of the second layer faces the substrate.
2 . The display device according to claim 1 , wherein each of the semiconductor light emitting devices comprises:
a first conductivity type semiconductor layer formed on the protective layer;
a first conductive electrode formed on the first conductivity type semiconductor layer;
an active layer formed on the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer formed on the active layer; and
a second conductive electrode formed on the second conductivity type semiconductor layer,
wherein the pattern layer is formed on a surface different from a surface on which the first conductivity type semiconductor layer is formed on the protective layer.
3 . The display device according to claim 1 , wherein the substrate comprises a dielectric layer, and the second surface of the second layer is in contact with the dielectric layer of the substrate.
4 . The display device according to claim 3 , wherein the second layer comprises a plurality of holes convexly formed toward the first layer.
5 . The display device according to claim 4 , wherein the concave-convex structure is formed by the plurality of holes toward the first layer.
6 . The display device according to claim 4 , wherein the plurality of holes of the second layer comprise holes having different diameters.
7 . The display device according to claim 4 , wherein the first layer is exposed by the plurality of holes.
8 . The display device according to claim 4 , wherein a spacing distance between the plurality of holes comprises an irregular spacing distance.
9 . The display device according to claim 3 , wherein the first layer and the second layer are formed of any one of a metal, an alloy in which two or more metals are mixed, and a dielectric material.
10 . The display device according to claim 3 , wherein a thickness of the second layer is greater than a thickness of the first layer.
11 . The display device according to claim 1 ,
wherein the first layer and the second layer are formed of any one of a metal, an alloy of two or more metals, and a dielectric material.
12 . The display device according to claim 11 , wherein the first layer is configured to cover one surface of the protective layer and the second layer is disposed on at least the partial region of the second surface of the first layer, wherein the protective layer is sized to not connect to adjacent semiconductor light emitting devices.
13 . The display device according to claim 1 , wherein the protective layer of each of the semiconductor light emitting devices is sized to not contact adjacent ones of the semiconductor light emitting devices.
14 . The display device according to claim 1 , wherein an entire portion of the first layer is positioned between the protective layer and the second layer.
15 . The display device according to claim 1 , wherein the first surface of the first layer is in contact with an entire side of the protective layer facing the first layer.
16 . The display device according to claim 1 , wherein the concave-convex structure includes a plurality of curves having respectively different radius of curvature.
17 . The display device according to claim 1 , wherein the concave-convex structure forms a plurality of gaps between the second surface of the second layer and a surface of the substrate facing the second layer, wherein each of the plurality of gaps is void of material.