IP Library › Granted Patent US 12666765
Granted Patent B2
US 12666765 · App. 18/187,692 · Granted Jun 23, 2026

Light-emitting element

Inventors: YinYu Chen (Hsinchu, TW); Yi-Hong Chen (Hsinchu, TW); Chia-An Lee (Hsinchu, TW); Yu-Hsin Huang (Hsinchu, TW); Kuan-Heng Lin (Hsinchu, TW)
Assignee: AUO Corporation
H10H20/84H10H20/018H10H20/82H10W90/00H10H20/034H10H20/812H10H20/823H10H20/825
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Quick Facts
Patent No.
US 12666765
App. No.
18/187,692
Granted
Jun 23, 2026
Kind
B2
Abstract

A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, a light-emitting layer, a first electrode, a second electrode, and a multi-layer film. The second type semiconductor layer overlaps the first type semiconductor layer. The light-emitting layer is located between the first type semiconductor layer and the second type semiconductor layer. The first electrode is electrically connected to the first type semiconductor layer and is located on a side of the first type semiconductor layer close to the second type semiconductor layer. The second electrode is electrically connected to the second type semiconductor layer and is located on a side of the second type semiconductor layer facing away from the first type semiconductor layer. The multi-layer film is located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer and has a protrusion portion. The protrusion portion protrudes from a side surface of the first type semiconductor layer. A light-emitting device includes the light-emitting element.

Claims (11)

1 . A light-emitting element, comprising:

a first type semiconductor layer;

a second type semiconductor layer, overlapping the first type semiconductor layer;

a light-emitting layer, located between the first type semiconductor layer and the second type semiconductor layer;

a first electrode, electrically connected to the first type semiconductor layer, and located on a side of the first type semiconductor layer close to the second type semiconductor layer;

a second electrode, electrically connected to the second type semiconductor layer, and located on a side of the second type semiconductor layer facing away from the first type semiconductor layer;

an anti-reflective layer, located on a surface of the first type semiconductor layer facing away from the second type semiconductor layer, and having a protrusion portion, wherein the protrusion portion protrudes from a side surface of the first type semiconductor layer; and

a carrier plate, wherein the carrier plate is located on the side of the second type semiconductor layer facing away from the first type semiconductor layer, and the anti-reflective layer is connected to the carrier plate, so that the first type semiconductor layer, the second type semiconductor layer, the light-emitting layer, the first electrode, and the second electrode are suspended above the carrier plate by means of the anti-reflective layer.

2 . The light-emitting element according to claim 1 , wherein a ratio of a width of the protrusion portion of the anti-reflective layer to a width of the first type semiconductor layer is 5% to 95%.

3 . The light-emitting element according to claim 1 , wherein the surface of the first type semiconductor layer facing away from the second type semiconductor layer has a plurality of notches, and the anti-reflective layer is bonded to the plurality of notches.

4 . The light-emitting element according to claim 3 , wherein diameters of the plurality of notches are 0.1 μm to 30 μm.