uLED display design method based on nanowire

1 . A μLED display manufacturing method based on nanowire, comprising: growing three types of nanowire materials capable of generating three primary colors: red, green and blue on a substrate; respectively mixing the three types of nanowire materials in insulated photocuring adhesives to form three mixtures and injecting the three mixtures into different grids of a grid pool, and performing curing; and finally, arranging electrodes on upper and lower surfaces of the grid pool;

the μLED display manufacturing method based on nanowire comprises the following steps:

Step S 1 : growing three types of nanowire materials for generating three primary colors: red, green and blue;

Step S 2 : respectively mixing the three types of nanowire materials for generating three primary colors: red, green and blue into three photocuring adhesives to form three mixtures and stirring the three mixtures fully, and evenly dispersing the three types of nanowire materials in the three photocuring adhesives to obtain three types of fully stirred photocuring adhesive-nanowire material adhesive body;

Step S 3 : respectively injecting the fully stirred photocuring adhesive-nanowire material adhesive body correspondingly into the grids of the grid pool corresponding to sub-pixels of the three primary colors: red, green and blue, and performing photocuring, and cutting off the overflowing photocuring adhesive-nanowire material adhesive body by way of laser cutting after photocuring to obtain sub-pixel cured μLEDs; and

Step S 4 : enabling an electrode capable of working under a condition of an alternating current to be in one-to-one-correspondence with the corresponding sub-pixel cured μLEDs on the upper and lower surfaces of the grid pool by way of attaching a chip electrode or growing the electrode, and cutting off a desired display size by way of laser cutting;

the Step S 1 comprises the following steps:

Step S 11 : cleaning and treating a substrate;

Step S 12 : putting the substrate in a reaction chamber of a physical vapor deposition device and starting evaporation of a nanowire buffer layer to solve mismatch between the substrate and the nanowire in an axial direction, wherein the nanowire releases stress-strain caused by mismatch between the substrate and crystal lattices of the nanowire material along a side surface and a direction perpendicular to a junction interface during growth, so that materials with mismatched crystal lattices can be connected in series and grow in a radial direction or an axial direction conveniently;

Step S 13 : putting the substrate covered with the thin film of the buffer layer in a multi-chip HVPE growth system, starting growing the nanowire at a low temperature by taking the substrate as a bottom, and a nanowire material source, n and p-doped gases, a reaction gas, a carrier gas and electropositive and electronegative tendency treatment are controlled, wherein the nanowire grows to become a structure of an electropositive tendency p-doped nanowire end-p-doped nanowire-n-doped nanowire-electronegative tendency n-doped nanowire end from bottom to top; and

Step S 14 : cooling the structure to take out a sample so as to obtain the nanowire material.

2 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein the nanowire material is of a homogeneous structure, the upper and lower ends of the nanowire material are respectively n and p-doped, two end tops are respectively in electronegative tendency and electropositive tendency, and a hole electron recombination can be generated at a center of a junction of n and p homojunctions.

3 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein a diameter of the nanowire ranges from 40 nm to 60 nm, and a length thereof ranges from 300 nm and 400 nm.

4 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein for sub-pixels with different primary colors, a nanowire growth material is different direct band-gap semiconductor compounds from groups III-V.

5 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein the insulated photocuring adhesives is a transparent insulating material.

6 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein the grid pool is made from a transparent insulating material.

7 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein the grids of the grid pool are rectangular in shape, with a length ranged from 16 μm to 32 um, a width ranged from 9 um to 18 um and a depth ranged from 9 um to 18 um.

8 . The μLED display manufacturing method based on nanowire according to claim 1 , wherein the electrodes are a material capable of working under a condition of an alternating current, the material can be graphene, PEDOT: PPS, and metals silver, platinum or gold.