Light emitting diode having plurality of light emitting cells

1 . A light emitting diode, comprising:

light emitting cells, each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and arranged in a matrix;

ohmic reflection layers disposed to electrically contact with second conductivity type semiconductor layers of the light emitting cells;

a lower insulation layer covering the light emitting cells and the ohmic reflection layers, the lower insulation layer having openings exposing the first conductivity type semiconductor layer and an ohmic reflection layer of each of the light emitting cells;

a connector disposed on the lower insulation layer, and configured to electrically connect adjacent light emitting cells in series to form a serial array of light emitting cells disposed between a first terminal and a second terminal of the serial array;

a first pad metal layer electrically connected to the first conductivity type semiconductor layer of a last light emitting cell connected to the second terminal of the serial array through an opening of the lower insulation layer;

a second pad metal layer electrically connected to the ohmic reflection layer of a first light emitting cell disposed at a first terminal of the serial array through the opening of the lower insulation layer;

a third pad metal layer disposed on the lower insulation layer, and spaced apart from the connector, and the first and second pad metal layers;

an upper insulation layer covering the connector and the first through third pad metal layers, and having openings exposing upper surfaces of the first and second pad metal layers, respectively; and

a first bump pad and a second bump pad that are connected to the upper surfaces of the first pad metal layer and the second pad metal layer, respectively, the first pad metal layer and the second pad metal layer exposed by the openings of the upper insulation layer,

wherein the third pad metal layers cover a cell isolation region between adjacent light emitting cells, and are disposed between a first portion of the connector and a second portion of the connector that are configured to electrically connect adjacent light emitting cells,

wherein the first bump pad overlaps the third pad metal layers,

wherein a region where the first bump pad overlaps the third pad metal layer over the last light emitting cell is smaller than a region where the first bump pad overlaps the third pad metal layer over another adjacent light emitting cell.

2 . The light emitting diode of claim 1 ,

wherein the third pad metal layers are spaced apart from the first and second bump pads in a lateral direction so as not to overlap the first and second bump pads.

3 . The light emitting diode of claim 2 ,

wherein the third pad metal layers partially overlap the ohmic reflection layers over the adjacent light emitting cells.

4 . The light emitting diode of claim 2 , further comprising:

third bump pads disposed on light emitting cells, respectively, other than the first light emitting cell and the last light emitting cell.

5 . The light emitting diode of claim 4 ,

wherein the third pad metal layers are spaced apart from the third bump pads in a lateral direction so as not to overlap the third bump pads.

6 . The light emitting diode of claim 4 , wherein:

each of the third pad metal layers is disposed across all light emitting cells in one row, and

each of the third bump pads overlaps one of the third pad metal layers.

7 . The light emitting diode of claim 6 ,

wherein the third bump pads are connected to the third pad metal layers.

8 . The light emitting diode of claim 1 , wherein:

each of the third pad metal layers is disposed across all light emitting cells in one row, and

each of the first and second bump pads is disposed across all light emitting cells in one row.

9 . The light emitting diode of claim 8 , wherein:

the second bump pads overlaps the third pad metal layers, and

a region where the second bump pad overlaps the third pad metal layer over the first light emitting cell is smaller than a region where the second bump pad overlaps the third pad metal layer over another adjacent light emitting cell.

10 . The light emitting diode of claim 1 ,

wherein the first pad metal layer is disposed within an upper region of the last light emitting cell, and the second pad metal layer is disposed within an upper region of the first light emitting cell.

11 . The light emitting diode of claim 10 , wherein:

the light emitting cells include a mesa disposed on the first conductivity type semiconductor layer,

the mesa includes the active layer and the second conductivity type semiconductor layer, and

the first pad metal layer covers a portion of a side surface of the mesa of the last light emitting cell.

12 . The light emitting diode of claim 11 ,

wherein the second pad metal layer is disposed in an upper region of the ohmic reflection layer on the first light emitting cell.

13 . The light emitting diode of claim 11 ,

wherein the second pad metal layer covers a portion of a side surface of the mesa of the first light emitting cell.

14 . The light emitting diode of claim 1 ,

wherein light emitting cells adjacent to each other in one row of the light emitting cells are electrically connected to each other by the first portion of the connector and the second portion of the connector that are disposed near both edges of each of the light emitting cells.

15 . The light emitting diode of claim 14 ,

wherein light emitting cells in different rows are electrically connected to one another by one connector.

16 . The light emitting diode of claim 1 ,

wherein the opening of the lower insulation layer exposing an ohmic reflection layer and the opening of the upper insulation layer exposing the second pad metal layer are spaced apart in a lateral direction so as not to overlap each other.