Micro LED, micro LED panel and micro LED chip
A micro LED includes a first type semiconductor layer; a light emitting layer formed on the first type semiconductor layer; a second type semiconductor layer formed on the light emitting layer; wherein, at least one part of a sidewall of the second type semiconductor layer is not aligned with a sidewall of the first type semiconductor layer.
1 . A micro LED, comprising:
a first type semiconductor layer;
a light emitting layer formed on the first type semiconductor layer; and
a second type semiconductor layer formed on the light emitting layer; wherein a maximum width of the second type semiconductor layer is less than a minimum width of the first type semiconductor layer; at least one part of a sidewall of the second type semiconductor layer is not aligned with a sidewall of the first type semiconductor layer, and the sidewall of the second type semiconductor layer conforms to a straight line.
2 . The micro LED according to claim 1 , wherein the sidewall of the first type semiconductor layer is aligned with a sidewall of the light emitting layer.
3 . The micro LED according to claim 1 , further comprising:
a first electrode formed at a bottom of the first type semiconductor layer; and
a second electrode formed at a top of the second type semiconductor layer.
4 . The micro LED according to claim 3 , wherein a maximum width of the first electrode is less than a minimum width of the first type semiconductor layer.
5 . The micro LED according to claim 4 , wherein the maximum width of the first electrode is less than or equal to a minimum width of the second electrode.
6 . The micro LED according to claim 3 , wherein a maximum width of the second electrode is less than a bottom width of the second type semiconductor.
7 . A micro LED panel comprising two or more micro LEDs, wherein each one of the two or more micro LEDs comprises:
a first type semiconductor layer;
a light emitting layer formed on the first type semiconductor layer; and
a second type semiconductor layer formed on the light emitting layer; wherein at least one part of a sidewall of the second type semiconductor layer is not aligned with a sidewall of the first type semiconductor layer;
wherein the light emitting layer is continuous between adjacent ones of the two or more micro LEDs.
8 . The micro LED panel according to claim 7 , wherein the light emitting layer is formed by a quantum well layer.
9 . The micro LED panel according to claim 7 , further comprising an isolation structure between the adjacent ones of the two or more micro LEDs.
10 . The micro LED panel according to any one of claim 7 , wherein the first type semiconductor layer is continuous between the adjacent ones of the two or more micro LEDs.
11 . The micro LED panel according to any one of claim 7 , wherein the first type semiconductor layer is not continuous between the adjacent ones of the two or more micro LEDs.
12 . A micro LED chip comprising one or more micro LED panels, wherein each one of the one or more micro LED panels comprises two or more micro LEDs, and each one of the two or more micro LEDs comprises:
a first type semiconductor layer;
a light emitting layer formed on the first type semiconductor layer; and
a second type semiconductor layer formed on the light emitting layer; wherein at least one part of a sidewall of the second type semiconductor layer is not aligned with a sidewall of the first type semiconductor layer;
wherein the light emitting layer is continuous between adjacent ones of the two or more micro LEDs.