Display device
A display device including a first substrate and a second substrate. A first barrier layer is on the first substrate and the second substrate is on the first barrier layer. A second barrier layer is on the second substrate and a buffer layer is on the second barrier layer. At least one transistor is on the buffer layer and an organic light-emitting diode is on the at least one transistor. The second substrate comprises a polyimide resin and a dielectric constant of the second substrate is smaller than a dielectric constant of the first substrate.
1 . A display device comprising:
a first substrate;
a first barrier layer on the first substrate;
a second substrate on the first barrier layer;
a second barrier layer on the second substrate;
a buffer layer on the second barrier layer;
at least one transistor on the buffer layer; and
an organic light-emitting diode on the at least one transistor,
wherein the second substrate comprises a polyimide resin, and a dielectric constant of the second substrate is less than a dielectric constant of the first substrate, and
wherein the second substrate comprises a polyimide resin and has one or more selected from the group consisting of (i) a glass transition temperature≥350° C.; (ii) a thermal decomposition temperature≥450° C. at 1% weight loss; (iii) a thermal expansion coefficient≤20 ppm/° C.; (iv) a transmittance≥85% at 450 nm; (v) a Young's modulus≥5 GPa; (vi) an elongation≥15%; and (vii) a polyimide resin comprising fluorine atoms, a bent molecular structure, and/or at least one aliphatic ring.
2 . The display device of claim 1 , wherein the dielectric constant of the second substrate is equal to or less than 3.5.
3 . The display device of claim 1 , wherein the glass transition temperature of the second substrate is equal to or greater than 350° C.
4 . The display device of claim 1 , wherein the second substrate has the thermal decomposition temperature of 450° C. or greater when the weight loss rate is 1%.
5 . The display device of claim 1 , wherein the thermal expansion coefficient of the second substrate is equal to or less than 20 parts per million per (ppm)/° C.
6 . The display device of claim 1 , wherein the second substrate has the transmittance of 85% or greater for light having the wavelength of 450 nanometer (nm).
7 . The display device of claim 1 , wherein the Young's modulus of the second substrate is equal to or greater than 5 gigapascal (GPa).
8 . The display device of claim 1 , wherein an elongation of the second substrate is equal to or greater than 15%.
9 . The display device of claim 1 , wherein the polyimide resin comprises fluorine atoms.
10 . The display device of claim 1 , wherein the polyimide resin has the bent molecular structure.
11 . The display device of claim 1 , wherein the polyimide resin comprises the at least one aliphatic ring.
12 . A display device comprising:
a first substrate;
a first barrier layer on the first substrate;
a second substrate on the first barrier layer;
a second barrier layer on the second substrate;
a buffer layer on the second barrier layer;
at least one transistor on the buffer layer; and
an organic light-emitting diode on the at least one transistor,
wherein at least one of the first substrate or the second substrate comprises a polyimide resin, and has a transmittance of 85% or greater for a light having a wavelength of 450 nm.
13 . The display device of claim 12 , wherein a dielectric constant of each of the first substrate and the second substrate is equal to or less than 3.5.
14 . The display device of claim 12 , wherein a glass transition temperature of the second substrate is equal to or greater than 350° C.
15 . The display device of claim 12 , wherein the second substrate has a thermal decomposition temperature of 450° C. or greater when a weight loss rate is 1%.
16 . The display device of claim 12 , wherein a thermal expansion coefficient of the second substrate is equal to or less than 20 ppm/° C.
17 . The display device of claim 12 , wherein the second substrate has a transmittance of 85% or greater for a light having a wavelength of 450 nm.
18 . The display device of claim 12 , wherein a Young's modulus of the second substrate is equal to or greater than 5 GPa.
19 . The display device of claim 12 , wherein an elongation of the second substrate is equal to or greater than 15%.
20 . The display device of claim 12 , wherein the polyimide resin comprises one selected from among
21 . A display device comprising:
a first substrate;
a first barrier layer on the first substrate;
a second substrate on the first barrier layer;
a first transistor and a second transistor on the second substrate, the first transistor comprising a polysilicon semiconductor layer and the second transistor comprising an oxide semiconductor layer; and
an organic light-emitting diode on the first transistor,
wherein no conductive member is between the polysilicon semiconductor layer and the second substrate, and
wherein the second substrate comprises a polyimide resin and has one or more of selected from the group consisting of: (i) a transmittance of 85% or greater for a light having a wavelength of 450 nm; (ii) the polyimide resin comprising fluorine atoms; (iii) the polyimide resin having a bent molecular structure; and (iv) the polyimide resin comprising at least one aliphatic ring.
22 . The display device of claim 21 , wherein the second substrate has the transmittance of 85% or greater for light having the wavelength of 450 nm.
23 . The display device of claim 21 , wherein the second substrate comprises the polyimide resin, and the polyimide resin comprises fluorine atoms.
24 . The display device of claim 21 , wherein the second substrate comprises the polyimide resin, and the polyimide resin has the bent molecular structure.
25 . The display device of claim 21 , wherein the second substrate comprises the polyimide resin, and the polyimide resin comprises at least one aliphatic ring.