Display panel and display panel preparation method

1 . A display panel preparation method, comprising following steps:

providing a support base board, and depositing and forming a first buffer layer on the support base board;

depositing and forming a barrier layer on the first buffer layer;

providing a mask, the mask comprising a light-transmitting region and a light-shielding region, and illuminating the barrier layer and the first buffer layer using the mask, so that an adhesive force between the first buffer layer corresponding to the light-transmitting region and the barrier layer is reduced;

depositing and forming a second buffer layer on the barrier layer, and preparing a thin film transistor device layer on the second buffer layer, a thickness of the prepared second buffer layer ranging from 6 μm to 15 μm;

forming a thin film transistor device layer on the second buffer layer corresponding to the light-transmitting region and not on the second buffer layer corresponding to the light-shielding region;

cutting the display panel along an edge corresponding to the light-transmitting region to obtain a plurality of display sub-panels; and

processing the plurality of display sub-panels by a laser lifting off process to separate the support base board from the first buffer layer and separate the first buffer layer from the barrier layer.

2 . The display panel preparation method according to claim 1 , wherein after the first buffer layer is illuminated, the adhesive force between the first buffer layer and the barrier layer is less than an adhesive force between the second buffer layer and the barrier layer.

3 . The display panel preparation method according to claim 2 , wherein a transmittance of the second buffer layer is greater than a transmittance of the first buffer layer.

4 . The display panel preparation method according to claim 3 , wherein the first buffer layer is a yellow polyimide film layer, and the second buffer layer is a transparent polyimide film layer.

5 . The display panel preparation method according to claim 1 , wherein mask processing is performed on the display panel by using ultraviolet light as illumination light, a wavelength of the ultraviolet light ranges from 300 nm to 400 nm, an illumination power ranges from 0.1 W to 1 W, illumination lasting for 8 minutes to 30 minutes at room temperature.

6 . The display panel preparation method according to claim 1 , wherein the adhesive force between the second buffer layer and the barrier layer ranges from 0.2 N to 5 N, and after the mask processing is performed on the first buffer layer, the adhesive force between the first buffer layer and the barrier layer is less than 0.2 N.

7 . The display panel preparation method according to claim 1 , wherein forming the first buffer layer comprises following steps:

coating the support base board with a buffer solution, baking for 20 minutes to 80 minutes at a temperature from 370° C. to 460° C. to form a film layer, and removing excess buffer solution; and

placing a structure including the support base board and the film layer into pure nitrogen to cause the film layer to undergo a condensation reaction, to change the film layer to the first buffer layer.

8 . The display panel preparation method according to claim 1 , wherein forming the second buffer layer further comprises the following steps:

coating the barrier layer with a buffer solution corresponding to the second buffer layer, baking for 20 minutes to 35 minutes at a temperature from 350° C. to 460° C. to form a film layer, and removing excess buffer solution; and

placing a structure including the support base board, the first buffer layer, and the film layer into pure nitrogen to cause the film layer to undergo a condensation reaction, to change the film layer to the first buffer layer.

9 . A display panel preparation method, comprising the following steps:

providing a support base board, and depositing and forming a first buffer layer on the support base board;

depositing and forming a barrier layer on the first buffer layer;

providing a mask, the mask comprising a light-transmitting region and a light-shielding region, and illuminating the barrier layer and the first buffer layer using the mask, so that an adhesive force between the first buffer layer corresponding to the light-transmitting region and the barrier layer is reduced;

depositing and forming a second buffer layer on the barrier layer, and preparing a thin film transistor device layer on the second buffer layer;

forming a thin film transistor device layer on the second buffer layer corresponding to the light-transmitting region and not on the second buffer layer corresponding to the light-shielding region;

cutting the display panel along an edge corresponding to the light-transmitting region to obtain a plurality of display sub-panels; and

processing the plurality of display sub-panels by a laser lifting off process to separate the support base board from the first buffer layer and separate the first buffer layer from the barrier layer.

10 . The display panel preparation method according to claim 9 , wherein after the first buffer layer is illuminated, the adhesive force between the first buffer layer and the barrier layer is less than an adhesive force between the second buffer layer and the barrier layer.

11 . The display panel preparation method according to claim 10 , wherein a transmittance of the second buffer layer is greater than a transmittance of the first buffer layer.

12 . The display panel preparation method according to claim 11 , wherein the first buffer layer is a yellow polyimide film layer, and the second buffer layer is a transparent polyimide film layer.

13 . The display panel preparation method according to claim 9 , wherein mask processing is performed on the display panel by using ultraviolet light as illumination light, a wavelength of the ultraviolet light ranges from 300 nm to 400 nm, an illumination power ranges from 0.1 W to 1 W, illumination lasting for 8 minutes to 30 minutes at room temperature.

14 . The display panel preparation method according to claim 9 , wherein the adhesive force between the second buffer layer and the barrier layer range from 0.2 N to 5 N, and after the mask processing is performed on the first buffer layer, the adhesive force between the first buffer layer and the barrier layer is less than 0.2 N.

15 . The display panel preparation method according to claim 9 , wherein forming the first buffer layer specifically comprises the following steps:

coating the support base board with a buffer solution, baking for 20 minutes to 80 minutes at a temperature from 370° C. to 460° C. to form a film layer, and removing excess buffer solution; and

placing a structure including the support base board and the film layer into pure nitrogen to cause the film layer to undergo a condensation reaction, to change the film layer to the first buffer layer.

16 . The display panel preparation method according to claim 9 , wherein forming the second buffer layer further comprises following steps:

coating the barrier layer with a buffer solution corresponding to the second buffer layer, baking for 20 minutes to 35 minutes at a temperature from 350° C. to 460° C. to form a film layer, and removing excess buffer solution; and

placing a structure including the support base board, the first buffer layer, and the film layer into pure nitrogen to cause the film layer to undergo a condensation reaction, to change the film layer to the first buffer layer.