Augmented logarithmic spiral antenna structure applied to electromagnetic wave energy absorber, thermoelectric energy harvester, photoconductive antenna, array antenna and rectenna
An augmented logarithmic spiral antenna structure includes a first conductive layer, a dielectric layer and a second conductive layer. The first conductive layer includes a first spiral arm and a plurality of second spiral arms. The first spiral arm includes a first initial radius. The second spiral arms are disposed around and connected to the first spiral arm, and each of the second spiral arms includes a second initial radius. The dielectric layer has a top surface and a bottom surface, and the top surface is connected to the first conductive layer. The second conductive layer is connected to the bottom surface. A plurality of the second initial radii of the second spiral arms are different from each other, and different from the first initial radius.
1 . A thermoelectric energy harvester, comprising:
a first conductive layer having a first pattern and receiving a heat radiation, wherein the first conductive layer comprises:
a first spiral arm comprising a first initial radius; and
a plurality of second spiral arms disposed around and connected to the first spiral arm, wherein each of the second spiral arms comprises a second initial radius;
a dielectric layer connected to the first conductive layer and having a second pattern, wherein the second pattern is the same as the first pattern;
a second conductive layer connected to the dielectric layer, wherein the dielectric layer is located between the first conductive layer and the second conductive layer;
a contact electrode disposed through the dielectric layer and electrically connected between the first conductive layer and the second conductive layer; and
a coaxial cable electrically connected to the contact electrode and converting the heat radiation into a direct current according to a Seebeck effect;
wherein a plurality of the second initial radii of the second spiral arms are different from each other, and different from the first initial radius.
2 . The thermoelectric energy harvester of claim 1 , wherein the first conductive layer consists of a P-type semiconductor, and the second conductive layer consists of an N-type semiconductor.
3 . The thermoelectric energy harvester of claim 1 , wherein the first conductive layer consists of nickel (Ni) or one of a plurality of P-type conductive materials, and the second conductive layer consists of gold (Au) or one of a plurality of N-type conductive materials.