3-dimensional memristor element and method for manufacturing the same
View Patent ↗A 3D memristor element includes a 3D nano-composite including a resistance-varying part, a first conductor and a second conductor, a first terminal electrically connected to the first conductor, and a second terminal electrically connected to the second conductor. The resistance-varying part includes a plurality of nano-shells, which are three-dimensionally arranged and connected to each other. The first conductor is disposed in the nano-shells and has a 3D network structure thereby forming a 3D interface with the nano-shells. The second conductor three-dimensionally surrounds the resistance-varying part, and is separated from the first conductor by the resistance-varying part.
1 . A 3-dimensional (3D) memristor element comprising:
a 3D nano-composite including a resistance-varying part including a plurality of nano-shells, which are three-dimensionally arranged and connected to each other, a first conductor disposed in the nano-shells and having a 3D network structure thereby forming a 3D interface with the nano-shells, and a second conductor three-dimensionally surrounding the resistance-varying part and being separated from the first conductor by the resistance-varying part;
a first terminal electrically connected to the first conductor; and
a second terminal electrically connected to the second conductor.
2 . The 3D memristor element of claim 1 , wherein the resistance-varying part includes at least one of a metal, a metal oxide, a metal nitride and a polymer.
3 . The 3D memristor element of claim 2 , wherein the resistance-varying part includes at least one of InO 2 , SnO 2 , SrTiO 3 , SiO x , CeO 2 , Al 2 O 3 , TiO 2 , ZnO, HfO 2 , HfAlO x , HfSiO x , TaO x , PCMO(Pr 0.3 Ca 0.7 MnO 3 ), SiN x , TiN x , TaN x , amorphous silicon, Ag and pV3D3 (poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane).
4 . The 3D memristor element of claim 1 , further comprising a dummy layer including a same material as the resistance-varying part and disposed on the first terminal,
wherein the second terminal is disposed on the dummy layer, and the first terminal is disposed under the 3D nano-composite.
5 . The 3D memristor element of claim 4 , wherein the second terminal includes a same material as the second conductor.
6 . The 3D memristor element of claim 1 , wherein a shell thickness of the resistance-varying part is 1 nm to 100 nm.
7 . The 3D memristor element of claim 1 , wherein the resistance-varying part includes:
a resistance-varying layer contacting the first conductor; and
an oxygen-storing layer contacting the second conductor and including a material different from the resistance-varying layer to have a composition including an oxygen vacancy.
8 . The 3D memristor element of claim 7 , wherein the resistance-varying layer includes a ferroelectric material, and the oxygen-storing layer includes at least one of BiFeO 3 , HfO x , TiO 2-x , Sb 2 Te 3 and TaO 2-x .
9 . The 3D memristor element of claim 1 , wherein the first conductor includes:
a filling portion including a metal and spaced apart from the resistance-varying part; and
a contact layer including a metal oxide or a metal nitride and contacting the resistance-varying part.