Flowable CVD film defect reduction
Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.
1 . A substrate processing method comprising:
forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor comprising trisilylamine (TSA) and a reactant comprising ammonia (NH 3 );
controlling a silicon-containing precursor/reactant flow ratio during forming the nucleation layer to reduce formation of miniature defects in the nucleation layer, wherein the silicon-containing precursor/reactant flow ratio is controlled in a range of from 20/1 to 50/1; and
curing the FCVD film.
2 . The method of claim 1 , wherein the FCVD film comprises silicon oxide.
3 . The method of claim 1 , wherein the miniature defects have a diameter in a range of 5 nm to 15 nm.
4 . The method of claim 1 , wherein controlling the silicon-containing precursor/reactant flow ratio reduces non-uniform initial nucleation during forming the nucleation layer.
5 . The method of claim 1 , wherein the silicon-containing precursor/reactant flow ratio is controlled in a range of from 25/1 to 50/1.
6 . The method of claim 1 , further comprising heating the substrate from below the substrate to a temperature in a range from about 20° C. to about 150° C.
7 . The method of claim 6 , wherein the substrate is on a pedestal during heating.
8 . The method of claim 1 , further comprising heating the substrate from above the substrate to a temperature in a range from about 20° C. to about 150° C.
9 . The method of claim 8 , wherein heating the substrate from above the substrate comprises heating an upper surface of a substrate processing chamber.
10 . The method of claim 1 , wherein exposing the substrate surface to a silicon-containing precursor and a reactant includes flowing one or more of a carrier gas selected from the group consisting of argon (Ar), helium (He), oxygen (O 2 ) and combinations thereof.
11 . The method of claim 10 , wherein flowing helium (He) includes flowing at least about 2400 sccm of helium (He).
12 . The method of claim 10 , wherein flowing oxygen (O 2 ) includes flowing at least about 5 sccm of oxygen (O 2 ).
13 . The method of claim 9 , further comprising maintaining a space between the upper surface and the substrate surface comprising maintaining a space in a range from about 2.5 inches (6.35 cm) to about 4.5 inches (11.43 cm).
14 . The method of claim 13 , comprising maintaining a space in a range from about 3.10 inches (7.87 cm) to about 3.95 inches (10.03 cm).
15 . A processing method comprising:
forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film in a gap on a substrate surface by exposing the substrate surface to a silicon-containing precursor comprising trisilylamine (TSA) and a reactant comprising one or more of ammonia (NH 3 ), hydrazine, NO 2 and N 2 ;
controlling a precursor/reactant flow ratio during forming the nucleation layer in a range of from 30/1 to 50/1 to reduce formation of miniature defects; and
curing the FCVD film.
16 . The method of claim 15 , wherein the FCVD film comprises silicon oxide.
17 . The method of claim 15 , wherein the reactant comprises ammonia (NH 3 ).
18 . The method of claim 15 , further comprising maintaining a space between an upper surface and the substrate surface comprising maintaining a space in a range from about 2.5 inches (6.35 cm) to about 4.5 inches (11.43 cm).
19 . The method of claim 18 , further comprising maintaining a space in a range from about 3.10 inches (7.87 cm) to about 3.95 inches (10.03 cm).