Area selective carbon-based film deposition
Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.
1 . A method of selectively depositing a film, the method comprising:
flowing a first precursor over a substrate comprising a metal surface and a non-metal surface, the first precursor comprising one or more of isophthalaldehyde, phthaldialdehyde, 2,6-pyridinedicarboxaldehyde, glutaric dialdehyde, benzene-1,3,5-tricarboxaldehyde, or a general formula R 1 —(X) n
wherein R 1 comprises one or more of an alkyl group, an alkenyl group, an aryl or aromatic group, and a cycloalkyl group, X comprises one or more of a hydroxide group, a ketone group, an amino group, an isocyanate group, a thiocyanate group, and an acyl chloride group, and n in the general formula R 1 —(X) n is an integer in a range of from 1 to 6,
wherein the first precursor reacts with a reactive group on the metal surface to form a first portion of a carbon-containing layer on the metal surface;
removing a first precursor effluent comprising the first precursor from the substrate;
flowing a second precursor over the substrate, the second precursor comprising ethylenediamine, 1,4-phenylene diisocyanate, or 4,4′-oxydianiline, or having a general formula R 2 —(Y) n
wherein R 2 comprises an amino group, Y comprises one or more of a hydroxide group, an aldehyde group, a ketone group, an acid group, an amino group, an isocyanate group, a thiocyanate group, and an acyl chloride group, and n in the general formula R 2 —(Y) n is an integer in a range of from 4 to 6,
wherein the second precursor reacts with the first portion to form a carbon-containing layer; and
removing a second precursor effluent comprising the second precursor from the substrate.
2 . The method of claim 1 , further comprising pre-treating the metal surface to form a metal oxide surface on the metal surface.
3 . The method of claim 1 , further comprising depositing at least one additional carbon-containing layer on the carbon-containing layer, wherein the carbon-containing layer and the at least one additional carbon-containing layer form the carbon-containing layer on the metal surface of the substrate.
4 . The method of claim 1 , wherein removing the first precursor comprises:
flowing a purge gas over the substrate; and
removing a mixture of the first precursor effluent and the purge gas from the substrate.
5 . The method of claim 4 , wherein the purge gas is selected from argon (Ar), helium (He), and nitrogen (N 2 ).
6 . The method of claim 1 , further comprising annealing the carbon-containing layer at a temperature in a range of from 100° C. to 600° C.
7 . The method of claim 1 , further comprising exposing the carbon-containing layer to a plasma treatment.