IP Library Granted Patent US 12666901
Granted Patent B2
US 12666901 · App. 18/825,040 · Granted Jun 23, 2026

Etching device and etching method thereof

Inventors: Seung Hoon Lee (Hwaseong-si, KR); Sung Won Mo (Hwaseong-si, KR); Yang Ho Lee (Osan-si, KR); Jeong Hyun Bae (Hwaseong-si, KR); Seong Hwan Park (Cheongju-si, KR); Hyun Dong Cho (Sejong-si, KR)
Assignee: ZEUS CO., LTD.
H10P72/0418B08B3/04C09K13/04H10P50/00H10P50/283H10P72/0406H10P72/0411H10P72/0422H10P72/0424H10P72/0426H10P72/1914H10P72/33
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Quick Facts
Patent No.
US 12666901
App. No.
18/825,040
Granted
Jun 23, 2026
Kind
B2
Abstract

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber, a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber; a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber; and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

Claims (16)

1 . An etching method comprising:

a loading operation of opening an etching chamber to place an object;

a pressurization operation of pressurizing an inside of the etching chamber;

a heating operation of, when a temperature of an etchant is less than or equal to a set temperature, heating the etchant to the set temperature or a temperature higher than the set temperature;

an etching operation of supplying the etchant into the etching chamber to etch the object;

a rinsing operation of supplying a rinsing liquid into the etching chamber to remove by-products and the etchant remaining on the object;

a cleaning operation of supplying a cleaning liquid into the etching chamber to remove the rinsing liquid remaining on the object; and

an unloading operation of opening the etching chamber to discharge the object to the outside,

wherein the pressurization operation includes operating a first pressurizer to pressurize the etching chamber and an etchant supply container to a set pressure, and operating a second pressurizer to maintain a pressurization storage container, which accommodates the rinsing liquid and the cleaning liquid discharged from the etching chamber, in a pressurized atmosphere.

2 . The etching method of claim 1 , wherein in the heating operation, supply of the etchant to the etching chamber is cut off and the etchant is heated while circulating through a circulation line.

3 . The etching method of claim 1 , wherein in the etching operation, a circulation line, a rinsing liquid line, and a cleaning liquid line are closed, and the etchant circulates through a supply liquid line, the etching chamber, and a recovery line to perform etching.

4 . The etching method of claim 1 , wherein at least one of the rinsing operation and the cleaning operation further includes a discharge operation of closing a recovery line and discharging at least one of the rinsing liquid and the cleaning liquid to the pressurization storage container.

5 . The etching method of claim 4 , wherein in the discharge operation, at least one of the rinsing liquid and the cleaning liquid is discharged while maintaining the pressurization storage container in a pressurized atmosphere.

6 . The etching method of claim 1 , further comprising a drying operation of drying the object in the unloading operation or before the unloading operation.

7 . The etching method of claim 1 , further comprising a depressurization operation of discharging an internal pressure of the etching chamber to the outside before the unloading operation.

8 . The etching method of claim 1 , wherein the etchant selectively uses at least one or a mixture of one or more of HF, NHO 3 , H 2 O 2 , IPA, NH 4 OH, H 2 O, H 3 PO 4 , and H 2 SO 4 .