Processing apparatus using laser, method of laser lift-off and method of manufacturing semiconductor device
A processing apparatus using laser according to an embodiment includes a stage configured to hold a substrate and rotate, and a laser irradiation apparatus capable of moving in a radial direction of the rotation. The laser irradiation apparatus includes a control unit configured to control an output of an infrared pulsed laser so that L1/L2 satisfies 1.2 or more and 10 or less when a distance between laser spots adjacent to each other in a rotation direction of the stage is L1 and a distance between laser spots adjacent to each other in the radial direction of the rotation is L2.
1 . A processing apparatus using a laser, the processor apparatus comprising:
a stage configured to hold a substrate and rotate;
a laser irradiation apparatus movable in a radial direction of rotation of the stage; and
a moving mechanism configured to move the laser irradiation apparatus in the radial direction,
wherein the laser irradiation apparatus includes a control unit configured to control an output of an infrared pulsed laser so that the following condition is satisfied:
1.2≤ L 1/ L 2≤10
where L1 is a distance between laser spots adjacent to each other in a rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction.
2 . The processing apparatus using laser according to claim 1 , wherein the condition 1.2≤L1/L2≤10 is satisfied at a central portion of the substrate and at a peripheral portion outside the central portion.
3 . The processing apparatus using laser according to claim 1 , wherein L1 corresponds to a linear velocity/frequency of the infrared pulsed laser.
4 . The processing apparatus using laser according to claim 1 , wherein the control unit controls a diameter and frequency of the laser spot.
5 . The processing apparatus using laser according to claim 1 , wherein the infrared pulsed laser includes a carbon dioxide gas laser.
6 . A method of laser lift-off, the method comprising:
arranging a bonded substrate on a stage, the bonded substrate being formed by bonding a first substrate and a second substrate via a laser absorption layer;
rotating the stage; and
moving the laser irradiation apparatus in a radial direction of rotation of the stage,
wherein the laser irradiation apparatus is configured to irradiate the laser absorption layer with an infrared pulsed laser by controlling an output so that the following condition is satisfied:
1.2≤ L 1/ L 2≤10
where L1 is a distance between laser spots adjacent to each other in the rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction, and
wherein L1 is greater than a diameter of each of the laser spots adjacent to each other in the rotation direction of the stage, and L2 is greater than a diameter of each of the laser spots adjacent to each other in the radial direction.
7 . The method according to claim 6 , wherein the laser irradiation apparatus controls the output of the infrared pulsed laser so that the condition 1.2≤L1/L2≤10 is satisfied at a central portion of the second substrate and at a peripheral portion outside the central portion.
8 . The method according to claim 6 , wherein L1 corresponds to a linear velocity/frequency of the infrared pulsed laser.
9 . The method according to claim 6 , wherein the laser irradiation apparatus controls a diameter and frequency of the laser spot.
10 . The method according to claim 6 , wherein the infrared pulsed laser includes a carbon dioxide gas laser.
11 . A method of manufacturing a semiconductor device, the method comprising:
arranging a bonded substrate on a stage, the bonded substrate being formed by bonding a first substrate and a second substrate via a laser absorption layer;
rotating the stage;
moving a laser irradiation apparatus in a radial direction of rotation of the stage, the laser irradiation apparatus being configured to irradiate the laser absorption layer with an infrared pulsed laser by controlling an output so that the following condition is satisfied:
1.2≤ L 1/ L 2≤10
where L1 is a distance between laser spots adjacent to each other in the rotation direction of the stage, and L2 is a distance between laser spots adjacent to each other in the radial direction; and
peeling off the second substrate from the first substrate,
wherein L1 is greater than a diameter of each of the laser spots adjacent to each other in the rotation direction of the stage, and L2 is greater than a diameter of each of the laser spots adjacent to each other in the radial direction.
12 . The method according to claim 11 , wherein the laser absorption layer includes a silicon oxide film.
13 . The method according to claim 11 , wherein:
the bonded substrate includes a CMOS circuit, a memory cell array, and the laser absorption layer between the first substrate and the second substrate, and
the laser irradiation apparatus irradiates the infrared pulsed laser from a second substrate side.