Anodization for metal matrix composite semiconductor processing chamber components
A component of a semiconductor processing chamber formed of a metal matrix component having an anodized layer on a surface thereof. The anodized layer comprises an aluminum oxide layer and is formed over an AlSic component. The anodized layer provides the component with protection against corrosion due to plasma processing gases, as the anodized layer provides a protective coating. A layer of aluminum is plated over a surface of the component and the aluminum layer is subsequently anodized to form the protective layer.
1 . A component in a semiconductor processing chamber, the component comprising:
a body comprising a metal matrix composite; and
an anodized layer over the body, wherein the component is an electrostatic chuck baseplate and further comprises a plurality of internal gas passages, wherein each internal gas passage has a surface comprising the anodized layer and each internal gas passage has an outlet on an underside of the baseplate.
2 . The component as recited in claim 1 , wherein the metal matrix composite comprises AlSiC.
3 . The component as recited in claim 1 , further comprising an aluminum layer between the body and the anodized layer.
4 . The component as recited in claim 3 , wherein the aluminum layer is at least 99% pure aluminum by mass.
5 . The component as recited in claim 3 , wherein the aluminum layer is at least 99.5% pure aluminum by mass.
6 . The component as recited in claim 3 , wherein the aluminum layer is at least 99.9% pure aluminum by mass.
7 . The component as recited in claim 2 , wherein the AlSiC comprises 30-75% silicon carbide by volume.
8 . The component as recited in claim 1 , wherein the anodized layer is formed over a bottom surface of the body.
9 . The component as recited in claim 1 , wherein the anodized layer is an aluminum oxide layer with a purity of at least 99% aluminum oxide by mass.
10 . The component as recited in claim 1 , wherein the anodized layer has a porosity of 0.1%-0.5% by volume.
11 . The component as recited in claim 1 , wherein the anodized layer has a thickness in a range of 10-50 microns.
12 . The component as recited in claim 10 , wherein the anodized layer has a thickness less than 50 microns.
13 . The component as recited in claim 10 , wherein the anodized layer has a thickness less than 10 microns.