Semiconductor processing chucks featuring recessed regions near outer perimeter of wafer for mitigation of edge/center nonuniformity
Chucks for supporting semiconductor wafers during certain processing operations are disclosed. The chucks may include a recessed region near the outer perimeter of the wafer that has one or more surfaces that face towards the wafer but are recessed therefrom so as to not contact the wafer around the perimeter of the wafer. The use of such a recessed region prevents direct thermally conductive contact between the chuck and the wafer, thereby allowing the wafer to achieve a more uniform temperature distribution in certain process conditions. This has the further effect of causing certain processing operations to be more uniform with respect to edge-center deposition (or etch) layer thickness.
1 . An apparatus for semiconductor processing, the apparatus comprising:
a pedestal having:
a heating element; and
a top plate; wherein:
the top plate includes:
a substrate support surface configured to support a semiconductor wafer when the semiconductor wafer is placed on the pedestal;
one or more vacuum grooves located within a center region of the pedestal, each vacuum groove extending up to the substrate support surface and having an outer edge, wherein a center axis of the top plate passes through the center region;
a gas groove that extends around the center region of the pedestal and has an inner edge and an outer edge; and
a recessed region having one or more recessed surfaces and an inner perimeter positioned between the center region and the inner edge of the gas groove,
wherein the one or more recessed surfaces, the one or more vacuum grooves, and the gas groove are all on the same side of the top plate,
wherein the one or more recessed surfaces are each offset along the center axis from a reference plane coincident with the substrate support surface so that there is a gap between the one or more recessed surfaces and the reference plane that is less than 0.05 inches and such that the one or more recessed surfaces are closer to the reference plane than a bottom surface of the gas groove, and
wherein, for each vacuum groove of the one or more vacuum grooves, a portion of the outer edge of the vacuum groove that is closest to the inner perimeter is separated from the inner perimeter by at least a corresponding first distance D 1 and separated from the closest portion of the gas groove by at least a corresponding second distance D 2 .
2 . The apparatus of claim 1 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.4±0.1.
3 . The apparatus of claim 1 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.25±0.05.
4 . The apparatus of claim 1 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.15±0.05.
5 . The apparatus of claim 1 , wherein the inner edge of the gas groove at least partially bounds the recessed region.
6 . The apparatus of claim 1 , wherein there is a radial gap between the inner edge of the gas groove and an outer perimeter of the recessed region.
7 . The apparatus of claim 1 , wherein the gap between the one or more surfaces of the recessed region and the substrate support surface is greater than than or equal to 0.005 inches.
8 . The apparatus of claim 1 , wherein the inner edge of the gas groove is within a circular region having a diameter of 300 mm±1 mm and the outer edge of the gas groove is outside of the circular region.
9 . The apparatus of claim 1 , wherein the top plate is made of aluminum.
10 . The apparatus of claim 1 , wherein the top plate is made of a ceramic.
11 . The apparatus of claim 1 , further comprising:
a process chamber;
an inert gas source; and
a vacuum source, wherein:
the pedestal is located within the process chamber,
the inert gas source is configured to controllably flow an inert gas to the gas groove, and
the vacuum source is configured to controllably draw a vacuum on the one or more vacuum grooves.
12 . The apparatus of claim 11 , further comprising:
a showerhead positioned above the pedestal and configured to distribute gases flowed therethrough towards the pedestal; and
one or more process gas sources, wherein the one or more process gas sources are each configured to controllably flow a corresponding process gas through the showerhead.
13 . The apparatus of claim 12 , wherein the one or more process gas sources are configured to controllably flow a metal-containing gas that also includes an element selected from the group consisting of fluorine and chlorine.
14 . A chuck for supporting a semiconductor wafer during semiconductor processing, the chuck comprising:
a substrate support surface configured to support the semiconductor wafer when the semiconductor wafer is placed thereupon;
one or more vacuum grooves located within a center region of the chuck, each vacuum groove extending up to the substrate support surface and having an outer edge, wherein a center axis of the chuck passes through the center region and is perpendicular to the substrate support surface;
a gas groove that extends around the center region and has an inner edge and an outer edge; and
a recessed region having one or more recessed surfaces and an inner perimeter interposed between the center region and the inner edge of the gas groove,
wherein the one or more recessed surfaces, the one or more vacuum grooves, and the gas groove are all on the same side of a top plate,
wherein the one or more recessed surfaces are each offset along the center axis from a reference plane coincident with the substrate support surface so that there is a gap between the one or more recessed surfaces and the reference plane and such that the one or more recessed surfaces are closer to the reference plane than a bottom surface of the gas groove, and
wherein the smallest circular region that encircles the one or more vacuum grooves is separated from the inner perimeter by a first distance D 1 and separated from the closest portion of the gas groove by a second distance D 2 and D 2 −D 1 /D 2 =0.3±0.2.
15 . An apparatus for semiconductor processing, the apparatus comprising:
a pedestal having:
a heating element; and
a top plate; wherein:
the top plate includes:
a substrate support surface configured to support a semiconductor wafer when the semiconductor wafer is placed on the pedestal;
one or more vacuum grooves located within a center region of the pedestal, each vacuum groove extending up to the substrate support surface and having an outer edge, wherein a center axis of the top plate passes through the center region;
a gas groove that extends around the center region of the pedestal and has an inner edge and an outer edge; and
a recessed region having one or more recessed surfaces and an inner perimeter positioned between the center region and the inner edge of the gas groove,
wherein the one or more recessed surfaces, the one or more vacuum grooves, and the gas groove are all on the same side of the top plate,
wherein the one or more recessed surfaces are each offset along the center axis from a reference plane coincident with the substrate support surface so that there is a gap between the one or more recessed surfaces and the reference plane and such that the one or more recessed surfaces are closer to the reference plane than a bottom surface of the gas groove, and
wherein, for each vacuum groove of the one or more vacuum grooves, a portion of the outer edge of the vacuum groove that is closest to the inner perimeter is separated from the inner perimeter by at least a corresponding first distance D 1 and separated from the closest portion of the gas groove by at least a corresponding second distance D 2 , wherein (D 2 −D 1 )/D 2 is greater than or equal to 0.1 and less than or equal to 0.5.
16 . The apparatus of claim 15 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.4±0.1.
17 . The apparatus of claim 15 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.25±0.05.
18 . The apparatus of claim 15 , wherein, for each vacuum groove, (D 2 −D 1 )/D 2 =0.15±0.05.
19 . The apparatus of claim 15 , wherein the inner edge of the gas groove at least partially bounds the recessed region.
20 . The apparatus of claim 15 , wherein there is a radial gap between the inner edge of the gas groove and an outer perimeter of the recessed region.
21 . The apparatus of claim 15 , wherein the gap between the one or more recessed surfaces of the recessed region and the substrate support surface is less than or equal to 0.05 inches.
22 . The apparatus of claim 15 , wherein the inner edge of the gas groove is within a circular region having a diameter of 300 mm±1 mm and the outer edge of the gas groove is outside of the circular region.
23 . The apparatus of claim 15 , wherein the top plate is made of aluminum.
24 . The apparatus of claim 15 , wherein the top plate is made of a ceramic.
25 . The apparatus of claim 15 , further comprising:
a process chamber;
an inert gas source; and
a vacuum source, wherein:
the pedestal is located within the process chamber,
the inert gas source is configured to controllably flow an inert gas to the gas groove, and
the vacuum source is configured to controllably draw a vacuum on the one or more vacuum grooves.
26 . The apparatus of claim 25 , further comprising:
a showerhead positioned above the pedestal and configured to distribute gases flowed therethrough towards the pedestal; and
one or more process gas sources, wherein the one or more process gas sources are each configured to controllably flow a corresponding process gas through the showerhead.
27 . The apparatus of claim 26 , wherein the one or more process gas sources are configured to controllably flow a metal-containing gas that also includes an element selected from the group consisting of fluorine and chlorine.