TSV structure and fabricating method of the same

1 . A through silicon via (TSV) structure, comprising:

a substrate;

a through via penetrating the substrate;

a copper layer filling in the through via;

a trench embedded in the substrate and surrounding the copper layer, wherein the trench is separated from the through via by a portion of the substrate, and the portion of the substrate is free of an epitaxial layer, and wherein a first direction is perpendicular to a front surface of the substrate, and along the first direction, a depth of the trench measured from the front surface of the substrate is 0.5 to 5% of a depth of the through via measured from the front surface of the substrate; and

a material layer filling in the trench, wherein the material layer comprises W, Cr, Ir, Re, Zr, SiOC glass, hydrogen-containing silicon oxynitride, silicon oxide or spin-on glass.

2 . The TSV structure of claim 1 , wherein the trench forms a pattern, the pattern comprises a closed circular ring, a closed hexagonal ring, a closed octagonal ring, a closed decagonal ring or a closed dodecagonal ring.

3 . The TSV structure of claim 1 , wherein a second direction is parallel to the front surface of the substrate, along the first direction, the depth of the trench is between 0.25 micrometers and 2 micrometers, and along the second direction, a width of the trench is between 0.05 micrometers and 2 micrometers.

4 . The TSV structure of claim 1 , wherein a second direction is parallel to the front surface of the substrate, and along the second direction, a shortest distance between the through via and the trench is between 0.5 micrometers and 2 micrometers.

5 . The TSV structure of claim 1 , further comprising a silicon oxide layer and a barrier disposed between the copper layer and the through via.

6 . The TSV structure of claim 1 , wherein a top surface of the material layer, a top surface of the copper layer and a front surface of the substrate are aligned.

7 . The TSV structure of claim 1 , wherein a bottom surface of the copper layer is aligned with a back surface of the substrate.

8 . A through silicon via (TSV) structure, comprising:

a substrate;

a through via penetrating the substrate;

a copper layer filling in the through via;

a plurality of holes embedded in the substrate, wherein the plurality of holes are arranged into a pattern and the pattern surrounds the copper layer, wherein each of the plurality of holes is separated from the through via by a portion of the substrate, and the portion of the substrate is free of an epitaxial layer, and wherein a first direction is perpendicular to a front surface of the substrate, and along the first direction, a depth of each of the plurality of holes measured from the front surface of the substrate is 0.5 to 5% of a depth of the through via measured from the front surface of the substrate; and

a plurality of material layers respectively filling in each of the plurality of holes, wherein each of the plurality of material layers comprises W, Cr, Ir, Re, Zr, SiOC glass, hydrogen-containing silicon oxynitride, silicon oxide or spin-on glass.

9 . The TSV structure of claim 8 , wherein the pattern comprises a closed circular ring, a closed hexagonal ring, a closed octagonal ring, a closed decagonal ring or a closed dodecagonal ring.

10 . The TSV structure of claim 8 , wherein a second direction is parallel to the front surface of the substrate, along the first direction, the depth of each of the plurality of holes is between 0.25 micrometers and 2 micrometers, and along the second direction, a diameter of each of the plurality of holes is between 0.05 micrometers and 2 micrometers.

11 . The TSV structure of claim 8 , a second direction is parallel to the front surface of the substrate, and along the second direction, a shortest distance between the through via and each of the plurality of holes is between 0.5 micrometers and 2 micrometers.

12 . The TSV structure of claim 8 , further comprising a silicon oxide layer and a barrier disposed between the copper layer and the through via.

13 . The TSV structure of claim 8 , wherein a top surface of the material layer, a top surface of the copper layer and a front surface of the substrate are aligned.

14 . The TSV structure of claim 8 , wherein a bottom surface of the copper layer is aligned with a back surface of the substrate.

15 . A fabricating method of a through silicon via (TSV) structure, comprising:

providing a substrate;

forming a trench embedded in the substrate;

forming a copper layer filling in the trench;

forming a plurality of holes embedded in the substrate, wherein the plurality of holes are arranged into a pattern and the pattern surrounds the copper layer;

forming a plurality of material layers respectively filling in each of the plurality of holes, wherein the plurality of the material layers are hydrogen-containing silicon oxynitride and the plurality of the material layers are formed by a flowable chemical vapor deposition; and

polishing a back surface of the substrate to expose the copper layer and to thin the trench, wherein the trench which is thinned becomes a through via, each of the plurality of holes is separated from the through via by a portion of the substrate, and the portion of the substrate is free of an epitaxial layer, and wherein a first direction is perpendicular to a front surface of the substrate, and along the first direction, a depth of each of the plurality of holes measured from the front surface of the substrate is 0.5 to 5% of a depth of the through via measured from the front surface of the substrate.

16 . The fabricating method of a TSV structure of claim 15 , wherein steps of the flowable chemical vapor deposition comprise:

depositing the plurality of the material layers by inputting precursors including trisilylamine (TSA), ammonia (NH 3 ) and oxygen at a temperature of 65° C.; and

solidifying the plurality of the material layers at 105° C.