IP Library › Granted Patent US 12666943

Granted Patent B2

US 12666943 · App. 18/149,477 · Granted Jun 23, 2026

Interconnect structures

Inventors: Sung-Li Wang (Zhubei City, TW); Yasutoshi Okuno (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

H10W20/42 H10W20/042 H10W20/057 H10W20/075 H10W20/081 H10W20/435 H10W20/425 H10W20/4403 H10W20/47 H10W20/48

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Quick Facts

Patent No.: US 12666943
App. No.: 18/149,477
Granted: Jun 23, 2026
Kind: B2

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Abstract

Embodiments described herein relate generally to one or more methods for forming an interconnect structure, such as a dual damascene interconnect structure comprising a conductive line and a conductive via, and structures formed thereby. In some embodiments, an interconnect opening is formed through one or more dielectric layers over a semiconductor substrate. The interconnect opening has a via opening and a trench over the via opening. A conductive via is formed in the via opening. A nucleation enhancement treatment is performed on one or more exposed dielectric surfaces of the trench. A conductive line is formed in the trench on the one or more exposed dielectric surfaces of the trench and on the conductive via.

Claims (38)

1 . A structure comprising:

a dielectric layer over a semiconductor substrate; and

an interconnect structure disposed in the dielectric layer, the interconnect structure comprising:

a conductive via comprising a metal; and

a conductive line over the conductive via, the conductive line comprising a conductive fill material, the metal of the conductive via being different from the conductive fill material of the conductive line, wherein no seed layer or metal-containing barrier layer is disposed between the metal of the conductive via and the conductive fill material of the conductive line, wherein a seam is disposed in the conductive fill material of the conductive line, the seam forming an acute angle with respect to a vertical direction that is perpendicular to a top surface of the dielectric layer.

2 . The structure of claim 1 , wherein an upper surface of the conductive via at an interface between the conductive via and the conductive line is convex.

3 . The structure of claim 1 , wherein an upper surface of the conductive via at an interface between the conductive via and the conductive line is concave.

4 . The structure of claim 1 further comprising:

a metal-semiconductor compound at an interface between the conductive fill material of the conductive line and a surface of the dielectric layer, wherein a metal of the metal-semiconductor compound is a same metal as the conductive fill material.

5 . The structure of claim 1 further comprising:

a metal carbide at an interface between the conductive fill material of the conductive line and a surface of the dielectric layer, wherein a metal of the metal carbide is a same metal as the conductive fill material.

6 . The structure of claim 1 further comprising:

a metal nitride at an interface between the conductive fill material of the conductive line and a surface of the dielectric layer, wherein a metal of the metal nitride is a same metal as the conductive fill material.

7 . The structure of claim 1 further comprising:

a metal alloy at an interface between the conductive via and the conductive line.

8 . The structure of claim 1 , wherein a first species is disposed at a surface of the dielectric layer and at an upper surface of the conductive via at an interface between the conductive via and the conductive line, and a concentration of the first species decreases in a direction from the surface into the dielectric layer.

9 . A structure comprising:

a conductive feature over a semiconductor substrate;

an inter-metal dielectric over the conductive feature;

an interconnect in the inter-metal dielectric, the interconnect comprising:

a conductive via contacting the conductive feature, the conductive via comprising a metal; and

a conductive line contacting the conductive via, the conductive line comprising a conductive fill material, the metal of the conductive via being different from the conductive fill material of the conductive line, the metal of the conductive via extending continuously between the conductive feature and the conductive fill material of the conductive line, wherein a seam is disposed in the conductive fill material of the conductive line, the seam forming an acute angle with respect to a vertical direction that is perpendicular to a top surface of the inter-metal dielectric.

10 . The structure of claim 9 , wherein the metal of the conductive via is cobalt or ruthenium.

11 . The structure of claim 9 , wherein the conductive fill material of the conductive line is tungsten.

12 . The structure of claim 9 , wherein the conductive via has vertical sidewalls.

13 . The structure of claim 9 , wherein the conductive via has sloped sidewalls.

14 . A structure comprising:

a conductive feature over a semiconductor substrate;

a dielectric layer over the conductive feature; and

an interconnect structure in the dielectric layer, the interconnect structure comprising:

a conductive via contacting the conductive feature, the conductive via comprising a metal selected from cobalt and ruthenium; and

a conductive line over the conductive via, the conductive line comprising a conductive fill material comprising tungsten, the metal of the conductive via being different from the conductive fill material of the conductive line, the metal of the conductive via extending continuously between the conductive feature and the conductive fill material of the conductive line, wherein no seed layer is disposed between the metal of the conductive via and the conductive fill material of the conductive line, wherein a seam is disposed in the conductive fill material of the conductive line, the seam forming an acute angle with respect to a vertical direction that is perpendicular to a top surface of the dielectric layer.

15 . The structure of claim 14 , wherein no metal-containing barrier layer is disposed between the metal of the conductive via and the conductive fill material of the conductive line.

16 . The structure of claim 14 further comprising a first species disposed at a surface of the dielectric layer and at an upper surface of the conductive via at an interface between the conductive via and the conductive line, wherein a concentration of the first species decreases in a direction from the surface into the dielectric layer.

17 . The structure of claim 14 , wherein an upper surface of the conductive via at an interface between the conductive via and the conductive line is convex.

18 . The structure of claim 14 , wherein the metal of the conductive via is ruthenium and the conductive fill material of the conductive line is tungsten.

19 . The structure of claim 14 , wherein the seam comprises a void.

20 . The structure of claim 14 , wherein the seam comprises grain boundaries of the conductive fill material.