Flexible wiring architecture for multi-die integration

1 . A semiconductor structure, comprising:

a power distribution structure disposed on a first wafer;

an interconnect structure disposed on the first wafer and a second wafer; and

at least one decoupling capacitor connected between the power distribution structure and the interconnect structure;

wherein the first wafer comprises a first die with a first device and a first portion of the interconnect structure;

wherein the second wafer comprises at least a second die with a second device and a second portion of the interconnect structure; and

wherein the decoupling capacitor is coupled to the first device of the first die via the first portion of the interconnect structure and to the second device of the second die via the second portion of the interconnect structure.

2 . The semiconductor structure according to claim 1 wherein the first portion of the interconnect structure of the first wafer is coupled to the second portion of the interconnect structure of the second wafer.

3 . The semiconductor structure according to claim 1 wherein the first portion of the interconnect structure of the first wafer is bonded to the second portion of the interconnect structure of the second wafer via a copper-to-copper bond.

4 . The semiconductor structure according to claim 1 wherein the first device comprises a logic device.

5 . The semiconductor structure according to claim 4 wherein the second device comprise a memory device.

6 . The semiconductor structure according to claim 1 wherein the second wafer includes a plurality of the second dies, each of the second dies having a second device associated therewith.

7 . The semiconductor structure according to claim 6 wherein the at least one decoupling capacitor is coupled to the first device of the first wafer and to at least two of the second devices of at least two of the second dies of the second wafer.

8 . The semiconductor structure according to claim 6 wherein the at least one decoupling capacitor comprises first and second decoupling capacitors, the first decoupling capacitor being connected to the first device of the first wafer and at least one of the second devices of the second wafer, the second decoupling capacitor being connected to the first device of the first wafer and at least one other one of the second devices of the second wafer.

9 . The semiconductor structure according to claim 1 further comprising at least one power line coupling the power distribution structure with the first device of the first wafer and the second device of the second wafer.

10 . The semiconductor structure according to claim 9 further comprising at least one signal line coupling the power distribution structure with the first device of the first wafer and the at least a second device of the second wafer.

11 . The semiconductor structure according to claim 10 further comprising at least one additional signal line coupling the power distribution structure with the first device of the first wafer.

12 . The semiconductor structure according to claim 1 wherein the at least one decoupling capacitor comprises a metal-insulator-metal (MIM) capacitor.

13 . A semiconductor structure, comprising:

a first wafer comprising a first device and a first back end of line structure;

a second wafer comprising a second device and a second back end of line structure, the second back end of line structure of the second wafer being coupled to the first back end of line structure of the first wafer;

one or more power lines at least partially extending within the first wafer and the second wafer;

a power distribution structure; and

a decoupling capacitor disposed within the power distribution structure, the decoupling capacitor coupling the one or more power lines with the first device of the first wafer and the second device of the second wafer.

14 . The semiconductor structure according to claim 13 further comprising one or more signal lines at least partially extending between the first wafer and the second wafer.

15 . The semiconductor structure according to claim 14 wherein at least one of the one or more signal lines couples the power distribution structure with the first device of the first wafer.

16 . The semiconductor structure according to claim 15 wherein said at least one of the one or more signal lines extends through the first device of the first wafer.

17 . A semiconductor structure, comprising:

a first wafer comprising a first die with a logic device and a first back end of line structure;

a second wafer comprising a plurality of second dies, each second die having a memory device and a second back end of line structure, the second wafer and the first wafer being coupled to each other through bonding of one or more power lines and one or more signal lines of the first and second back end of line structures; and

a power distribution structure disposed on the first wafer, the power distribution structure comprising at least one decoupling capacitor coupled to the logic device of the first wafer and at least two of the memory devices of the second wafer.

18 . The semiconductor structure according to claim 17 wherein the one or more power lines and the one or more signal lines of the first and second back end of line structures are bonded via a copper-to-copper bond.

19 . The semiconductor structure according to claim 17 wherein the at least one decoupling capacitor comprises first and second decoupling capacitors, the first decoupling capacitor being connected to the logic device of the first wafer and at least one of the memory devices of the second wafer, the second decoupling capacitor being connected to the logic device of the first wafer and at least one other one of the memory devices of the second wafer.

20 . The semiconductor structure according to claim 17 wherein the at least one decoupling capacitor comprises a metal-insulator-metal (MIM) capacitor.