Semiconductor device and method of manufacturing semiconductor device
Provided are a semiconductor device capable of reducing damage on a resin case by heating during manufacture and a method of manufacturing a semiconductor device capable of reducing damage on a resin case by heating during manufacture. A semiconductor device includes a base plate, an insulating substrate, a semiconductor element, and a resin case. The base plate includes first and second regions whose positions differ from each other in a plan view. The insulating substrate is bonded on an upper surface of the second region. The insulating substrate includes a circuit pattern on an upper surface. The semiconductor element is bonded on the circuit pattern. The resin case is bonded on an upper surface of the first region. Thermal resistance between the upper surface and a lower surface of the first region is higher than thermal resistance between the upper surface and a lower surface of the second region.
1 . A semiconductor device, comprising:
a base plate;
an insulating substrate;
a semiconductor element; and
a resin case, wherein
the base plate includes a first region and a second region which are regions located in positions different from each other in a plan view,
the insulating substrate is bonded on an upper surface of the second region in the base plate,
the insulating substrate includes a circuit pattern on an upper surface,
the semiconductor element is bonded on the circuit pattern,
the resin case is bonded on an upper surface of the first region in the base plate,
thermal resistance between the upper surface and a lower surface of the first region in the base plate is higher than thermal resistance between the upper surface and a lower surface of the second region in the base plate,
the base plate includes a third member in the first region,
a thermal conductivity of the third member is lower than a thermal conductivity of a part of the base plate other than the third member, and
the third member is not exposed to the upper surface and the lower surface of the base plate.
2 . The semiconductor device according to claim 1 , wherein
the third member is not exposed to a surface of the base plate.
3 . The semiconductor device according to claim 1 , wherein
a melting point of the third member is higher than a melting point of a material of a part of the base plate other than the third member.
4 . The semiconductor device according to claim 1 , wherein
the third member is ceramic.
5 . A semiconductor device, comprising:
a base plate;
an insulating substrate;
a semiconductor element; and
a resin case, wherein
the base plate includes a first region and a second region which are regions located in positions different from each other in a plan view,
the insulating substrate is bonded on an upper surface of the second region in the base plate,
the insulating substrate includes a circuit pattern on an upper surface,
the semiconductor element is bonded on the circuit pattern,
the resin case is bonded on an upper surface of the first region in the base plate,
thermal resistance between the upper surface and a lower surface of the first region in the base plate is higher than thermal resistance between the upper surface and a lower surface of the second region in the base plate,
the base plate includes a fourth member in a surface part of at least one of an upper side and/or a lower side of the base plate in the first region, and
a thermal conductivity of the fourth member is lower than a thermal conductivity of a part of the base plate other than the fourth member.
6 . The semiconductor device according to claim 5 , wherein
the fourth member is a coating including ceramic.
7 . The semiconductor device according to claim 5 , wherein
the fourth member is an oxide film of a material of a part of the base plate other than the fourth member.
8 . The semiconductor device according to claim 7 , wherein
a thickness of the oxide film is equal to or larger than 1 μm.
9 . A method of manufacturing the semiconductor device according to claim 7 , wherein
after a part of the base plate other than the fourth member is formed, the surface of the base plate is oxidized to form the fourth member.
10 . The method of manufacturing the semiconductor device according to claim 9 , wherein
the resin case is bonded on the upper surface of the first region in the base plate, and
soldering by a reflow method is performed by heating from a side of the lower surface of the base plate after the formation of the fourth member and the bonding of the resin case to the upper surface of the first region in the base plate.
11 . A semiconductor device, comprising:
a base plate;
an insulating substrate;
a semiconductor element; and
a resin case, wherein
the base plate includes a first region and a second region which are regions located in positions different from each other in a plan view,
the insulating substrate is bonded on an upper surface of the second region in the base plate,
the insulating substrate includes a circuit pattern on an upper surface,
the semiconductor element is bonded on the circuit pattern,
the resin case is bonded on an upper surface of the first region in the base plate,
thermal resistance between the upper surface and a lower surface of the first region in the base plate is higher than thermal resistance between the upper surface and a lower surface of the second region in the base plate, and
the base plate has a hollow part between the upper surface and the lower surface in the first region.
12 . A method of manufacturing the semiconductor device according to claim 11 , wherein
after a member having a higher melting point than the material of the base plate is disposed in a region to be the hollow part and the base plate is formed by molding, the member having the higher melting point than the material of the base plate is exhausted from the hollow part, thereby forming the hollow part.
13 . The method of manufacturing the semiconductor device according to claim 12 , wherein
the resin case is bonded on the upper surface of the first region in the base plate, and
soldering by a reflow method is performed by heating from a side of the lower surface of the base plate after the formation of the hollow part and the bonding of the resin case to the upper surface of the first region in the base plate.
14 . A method of manufacturing the semiconductor device according to claim 11 , wherein
after a member having a lower melting point than the material of the base plate is disposed in a region to be the hollow part and the base plate is formed, the member having the lower melting point than the material of the base plate is melted, and the member which has been melted is exhausted from the hollow part through a relief hole, thereby forming the hollow part.
15 . The method of manufacturing the semiconductor device according to claim 14 , wherein
the resin case is bonded on the upper surface of the first region in the base plate, and
soldering by a reflow method is performed by heating from a side of the lower surface of the base plate after the formation of the hollow part and the bonding of the resin case to the upper surface of the first region in the base plate.