IP Library Granted Patent US 12666966
Granted Patent B2
US 12666966 · App. 18/353,669 · Granted Jun 23, 2026

Semiconductor device

Inventors: Hiroyuki Nakamura (Tokyo, JP); Shiori Uota (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H10W40/778H10W74/111
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Quick Facts
Patent No.
US 12666966
App. No.
18/353,669
Granted
Jun 23, 2026
Kind
B2
Abstract

A power module includes a conductive die bonding portion, a semiconductor element bonded to an upper surface of the die bonding portion, a sealing member sealing the die bonding portion and the semiconductor element, and a flexible insulating member bonded to a lower surface of the die bonding portion. The flexible insulating member is arranged in a recessed portion on a lower surface of the sealing member and has a convex portion protruding from the lower surface of the sealing member.

Claims (18)

1 . A semiconductor device comprising:

a conductive die bonding portion;

a semiconductor element bonded to an upper surface of the die bonding portion;

a sealing member sealing the die bonding portion and the semiconductor element; and

a flexible insulating member bonded to a lower surface of the die bonding portion, wherein

the flexible insulating member has an embedded portion arranged in a recess on a lower surface of the sealing member and has a convex portion on the embedded portion protruding from the lower surface of the sealing member, wherein in a direction parallel to the lower surface of the sealing member, a width of the convex portion is smaller than a width of the embedded portion.

2 . The semiconductor device according to claim 1 , wherein

the lower surface of the sealing member is positioned between an upper surface and a lower surface of the flexible insulating member in cross-sectional view.

3 . The semiconductor device according to claim 2 , wherein

the sealing member has a plurality of projections on the lower surface thereof, and

an amount of protrusion of the projections from the lower surface of the sealing member is smaller than an amount of protrusion of the convex portion of the flexible insulating member from the lower surface of the sealing member.

4 . The semiconductor device according to claim 3 , wherein,

in plan view, the sealing member is rectangular, and the projections are arranged at four corners of the sealing member.

5 . The semiconductor device according to claim 1 , wherein

the sealing member has a plurality of projections on the lower surface thereof, and

an amount of protrusion of the projections from the lower surface of the sealing member is smaller than an amount of protrusion of the convex portion of the flexible insulating member from the lower surface of the sealing member.

6 . The semiconductor device according to claim 5 , wherein,

in plan view, the sealing member is rectangular, and the projections are arranged at four corners of the sealing member.