High-frequency semiconductor package
An input feedthrough ( 8 ) and an output feedthrough ( 9 ) provided on the substrate ( 3 ) are wire-connected to an input pad ( 5 ) and an output pad ( 6 ) of the semiconductor chip ( 4 ) respectively. A metal seal ring ( 12 ) is provided on the substrate ( 3 ) is electrically connected to the metal plate ( 1 ) by a through-hole ( 15 ). A conductive cap ( 14 ) is bonded to the metal seal ring ( 12 ) and covers a place above the semiconductor chip ( 4 ). Both ends of an isolation metal wire ( 13 ) are electrically connected to the metal plate ( 1 ) and a loop comes into contact with a lower surface of the conductive cap ( 14 ). The isolation metal wire ( 13 ) constitutes an isolation wall partitioning an inner space into a region including the input feedthrough ( 8 ) and a region including the output feedthrough ( 9 ).
1 . A high-frequency semiconductor package comprising:
a metal plate;
a substrate provided on the metal plate and having an opening;
a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
an input feedthrough provided on the substrate and wire-connected to the input pad;
an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip; and
an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough,
a lower surface of the conductive cap is coated with a solder, and
the isolation metal wire and the conductive cap are bonded with the solder.
2 . The high-frequency semiconductor package according to claim 1 , wherein the isolation metal wire includes a plurality of wires arranged in line.
3 . The high-frequency semiconductor package according to claim 2 , further comprising first and second ground pads provided on the substrate, opposed to each other with the opening interposed therebetween, and electrically connected to the metal plate via the through-hole,
wherein the semiconductor chip has first and second isolation pads electrically connected to the metal plate, and
the plurality of wires includes a first wire connected to the first ground pad and the metal plate, a second wire connected to the metal plate and the first isolation pad, a third wire connected to the first and second isolation pads, a fourth wire connected to the second isolation pad and the metal plate, and a fifth wire connected to the metal plate and the second ground pad.
4 . A high-frequency semiconductor package comprising:
a metal plate;
a substrate provided on the metal plate and having an opening;
a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
an input feedthrough provided on the substrate and wire-connected to the input pad;
an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip; and
an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough,
a plurality of slits are provided parallel to one another in a lower surface of the conductive cap,
each of the slits has a width larger than a wire diameter of the isolation metal wire, and
the loop of the isolation metal wire is fitted within any one of the plurality of slits.
5 . A high-frequency semiconductor package comprising:
a metal plate;
a substrate provided on the metal plate and having an opening;
a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
an input feedthrough provided on the substrate and wire-connected to the input pad;
an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip; and
an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough,
the semiconductor chip has multi-stage amplifiers, and
the isolation metal wire partitions the inner space into a region including the amplifier of the last stage and a region including the amplifier of a stage preceding the last stage.
6 . A high-frequency semiconductor package comprising:
a metal plate;
a substrate provided on the metal plate and having an opening;
a semiconductor chip provided on the metal plate in the opening and having an input pad and an output pad;
an input feedthrough provided on the substrate and wire-connected to the input pad;
an output feedthrough provided on the substrate, opposed to the input feedthrough with the opening interposed therebetween, and wire-connected to the output pad;
a metal seal ring provided on the substrate and surrounding the opening, the input feedthrough and the output feedthrough;
a through-hole extending through the substrate and electrically connecting the metal seal ring and the metal plate;
a conductive cap bonded to the metal seal ring and covering a place above the semiconductor chip; and
an isolation metal wire having both ends electrically connected to the metal plate and a loop coming into contact with a lower surface of the conductive cap,
wherein the isolation metal wire constitutes an isolation wall partitioning an inner space, which is surrounded by the metal plate, the substrate, the metal seal ring, and the conductive cap, into a region including the input feedthrough and a region including the output feedthrough, and
the isolation metal wire includes metal wires arrayed in two rows in a staggered manner.
7 . The high-frequency semiconductor package according to claim 4 , wherein the isolation metal wire includes a plurality of wires arranged in line.
8 . The high-frequency semiconductor package according to claim 7 , further comprising first and second ground pads provided on the substrate, opposed to each other with the opening interposed therebetween, and electrically connected to the metal plate via the through-hole,
wherein the semiconductor chip has first and second isolation pads electrically connected to the metal plate, and
the plurality of wires includes a first wire connected to the first ground pad and the metal plate, a second wire connected to the metal plate and the first isolation pad, a third wire connected to the first and second isolation pads, a fourth wire connected to the second isolation pad and the metal plate, and a fifth wire connected to the metal plate and the second ground pad.
9 . The high-frequency semiconductor package according to claim 5 , wherein the isolation metal wire includes a plurality of wires arranged in line.
10 . The high-frequency semiconductor package according to claim 9 , further comprising first and second ground pads provided on the substrate, opposed to each other with the opening interposed therebetween, and electrically connected to the metal plate via the through-hole,
wherein the semiconductor chip has first and second isolation pads electrically connected to the metal plate, and
the plurality of wires includes a first wire connected to the first ground pad and the metal plate, a second wire connected to the metal plate and the first isolation pad, a third wire connected to the first and second isolation pads, a fourth wire connected to the second isolation pad and the metal plate, and a fifth wire connected to the metal plate and the second ground pad.