Semiconductor package structure and method for forming the same
A semiconductor package structure includes an interposer, an IPD package, a plurality of detecting bumps, and a plurality of daisy chains. The interposer includes at least a detecting pad and a plurality of bonding pads. The IPD package includes a plurality of metal bumps. The detecting bumps are disposed in the IPD package and separated from the metal bumps of the IPD package. The daisy chains are disposed in the IPD package and electrically connected to the detecting bumps.
1 . A method for forming a semiconductor package structure, comprising:
bonding an integrated passive device (IPD) package and a plurality of memory dies to an interposer, wherein the plurality of memory dies are stacked and bonded together, and enveloped in a first encapsulant;
encapsulating the IPD package, the plurality of memory dies, the first encapsulant and the interposer in a second encapsulant;
performing a first test on the IPD package; and
bonding the IPD package and the interposer to a package component after the first test.
2 . The method of claim 1 , wherein the encapsulating of the IPD package and the interposer comprises:
dispensing the second encapsulant between the IPD package and the interposer; and
removing a portion of the second encapsulant to expose a top surface of the IPD package.
3 . The method of claim 1 , further comprising bonding a device die to the interposer.
4 . The method of claim 1 , further comprising performing a second test on the IPD package prior to encapsulating.
5 . The method of claim 1 , further comprising performing a third test on the IPD package after the bonding of the IPD package and the interposer to the package component.
6 . The method of claim 1 , wherein the IPD package comprises a detecting device bonded to the interposer.
7 . The method of claim 6 , wherein the detecting device comprises a plurality of detecting bumps and a plurality of daisy chains.
8 . A method for forming a semiconductor package structure, comprising:
receiving an interposer comprising at least a bonding pad and a detecting pad;
bonding an integrated passive device (IPD) package and a plurality of memory dies to the interposer, wherein the IPD package comprises a detecting device, and the plurality of memory dies are stacked and bonded together and enveloped in a first encapsulant;
performing a first test on the detecting device of the IPD package;
encapsulating the IPD package, the plurality of memory dies, the first encapsulant and the interposer;
performing a second test on the detecting device of the IPD package; and
bonding the IPD package and the interposer to a package component after the second test.
9 . The method of claim 8 , wherein the interposer further comprises at least a through via.
10 . The method of claim 9 , further comprising:
thinning the interposer to expose the through via; and
forming a conductor coupled to the through via, wherein the conductor is electrically connected to the detecting device.
11 . The method of claim 10 , further comprising performing a third test on the detecting device through the conductor.
12 . The method of claim 8 , further comprising bonding a device die to the interposer.
13 . The method of claim 8 , wherein the encapsulating of the IPD package and the interposer comprises:
dispensing a second encapsulant between the IPD package and the interposer; and
removing a portion of the second encapsulant to expose a top surface of the IPD package.
14 . A method for forming a semiconductor package structure, comprising:
receiving an interposer, wherein the interposer comprises at least a through via;
bonding an integrated passive device (IPD) package and a plurality of memory dies to the interposer, wherein the IPD package comprises a detecting device, and the plurality of memory dies are stacked, bonded together and enveloped in a first encapsulant;
encapsulating the IPD package, the plurality of memory dies and the interposer;
performing a first test on the detecting device of the IPD package; and
bonding the IPD package and the interposer to a package component after the first test.
15 . The method of claim 14 , wherein the first test is performed prior to the encapsulating of the IPD package the interposer.
16 . The method of claim 14 , wherein the first test is performed after the encapsulating of the IPD package the interposer.
17 . The method of claim 14 , further comprising:
thinning the interposer to expose the through via; and
forming a conductor coupled to the through via, wherein the conductor is electrically connected to the detecting device.
18 . The method of claim 17 , further comprising performing a second test on the detecting device through the conductor.
19 . The method of claim 14 , wherein the package component has a first side facing the interposer and a second side opposite to the first side, and the package component comprises at least an electrical connector disposed on the second side.
20 . The method of claim 19 , further comprising performing a third test on the electrical connector.