Semiconductor device with hybrid routing and method therefor
A semiconductor device having hybrid routing is provided. The semiconductor device includes a package substrate having a first major side and a second major side. A plurality of conductive bond-on-pad (BOP) pads and a plurality of conductive bond-on-trace (BOT) pads are formed at the first major side. A non-conductive layer is formed over the plurality of BOP pads. Openings in the non-conductive layer expose a central portion of each BOP pad of the plurality of BOP pads. An inlet region is formed in the non-conductive layer such that a first BOT pad of the plurality of BOT pads is located within the inlet region.
1 . A method comprising:
forming a plurality of conductive bond-on-pad (BOP) pads at a first major side of a package substrate;
forming a plurality of conductive bond-on-trace (BOT) pads at the first major side of the package substrate;
depositing a non-conductive layer over the plurality of BOP pads;
forming openings in the non-conductive layer such that a central portion of each BOP pad of the plurality of BOP pads is exposed; and
forming an inlet region in the non-conductive layer such that a first BOT pad of the plurality of BOT pads is located within the inlet region.
2 . The method of claim 1 , wherein the first BOT pad is located between a first BOP pad of the plurality of BOP pads and a second BOP pad of the plurality of BOP pads.
3 . The method of claim 1 , wherein the first BOT pad located within the inlet region is substantially flanked on two sides by the non-conductive layer.
4 . The method of claim 1 , wherein the first BOT pad located within the inlet region is directly connected to a first BOP pad of the plurality of BOP pads by way of a conductive trace formed at the first major side of the package substrate.
5 . The method of claim 1 , further comprising:
affixing a semiconductor die on the first major side of the package substrate; and
connecting bond pads of the semiconductor die to the plurality of BOP pads and plurality of BOT pads by way of conductive die connectors.
6 . The method of claim 5 , further comprising injecting an underfill material between the semiconductor die and the first major side of the package substrate.
7 . A method comprising:
forming a plurality of conductive bond-on-pad (BOP) pads at a first major side of a package substrate;
forming a plurality of conductive bond-on-trace (BOT) pads at the first major side of the package substrate;
depositing a non-conductive layer over the plurality of BOP pads;
forming openings in the non-conductive layer such that a central portion of each BOP pad of the plurality of BOP pads is exposed;
forming an inlet region in the non-conductive layer such that a first BOT pad of the plurality of BOT pads is located within the inlet region; and
affixing a semiconductor die on the first major side of the package substrate, the semiconductor die overlaying the plurality of BOP pads and the plurality of BOT pads.
8 . The method of claim 7 , wherein the first BOT pad is located between a first BOP pad of the plurality of BOP pads and a second BOP pad of the plurality of BOP pads.
9 . The method of claim 8 , wherein forming the inlet region in the non-conductive layer further includes a second BOT pad of the plurality of BOT pads located within the inlet region between the first BOP pad of the plurality of BOP pads and a third BOP pad of the plurality of BOP pads.
10 . The method of claim 7 , wherein the first BOT pad located within the inlet region is substantially flanked on three sides by the non-conductive layer.
11 . The method of claim 7 , further comprising forming a plurality of connector pads at a second major side of the package substrate, a first connector pad of the plurality of connector pads interconnected with the first BOT pad by way of the package substrate.