IP Library Granted Patent US 12666999
Granted Patent B2
US 12666999 · App. 18/557,785 · Granted Jun 23, 2026

Semiconductor device and method of manufacturing semiconductor device

Inventor: Takayuki Matsumoto (Fukuoka, JP)
Assignee: Mitsubishi Electric Corporation
H10W76/63H10W76/15H10W76/17H10W76/67H10W90/10H10W40/235H10W40/611
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12666999
App. No.
18/557,785
Granted
Jun 23, 2026
Kind
B2
Abstract

A semiconductor device includes: a heat radiation plate; an insulating substrate disposed on an upper surface of the heat radiation plate; a semiconductor element mounted to an upper surface of the insulating substrate; a frame-like resin case disposed in a peripheral edge portion of the upper surface of the heat radiation plate and extending in an up-down direction to surround a lateral surface of each of the insulating substrate and the semiconductor element; and a resin bonded member formed to be detachable from the resin case as a separate body separated from the resin case and bonded to the heat radiation plate while being attached to the resin case. Formed in the bonded member is a screw hole to which a screw is screwed to bond the bonded member to the heat radiation plate.

Claims (25)

1 . A semiconductor device, comprising:

a heat radiation plate;

an insulating substrate disposed on an upper surface of the heat radiation plate;

a semiconductor element mounted to an upper surface of the insulating substrate;

a frame-like resin case disposed in a peripheral edge portion of the upper surface of the heat radiation plate and extending in an up-down direction to surround a lateral surface of each of the insulating substrate and the semiconductor element; and

a resin bonded member formed to be detachable from the resin case as a separate body separated from the resin case and bonded to the heat radiation plate while being attached to the resin case, wherein

formed in the bonded member is a screw hole to which a screw is screwed to bond the bonded member to the heat radiation plate.

2 . The semiconductor device according to claim 1 , wherein

the semiconductor element includes a wide bandgap semiconductor.

3 . The semiconductor device according to claim 1 , wherein

a convex part protruding to an inner periphery side is formed in an inner peripheral surface of the resin case, and

a concave part fitted to the convex part is formed in an outer peripheral part of the bonded member.

4 . The semiconductor device according to claim 3 , wherein

The semiconductor element includes a wide bandgap semiconductor.

5 . The semiconductor device according to claim 3 , wherein

a guide groove extending to an up-down direction is formed in a surrounding part of the convex part in the inner peripheral surface of the resin case, and

a guide convex part fitted to the guide groove to be movable along an extension direction of the guide groove is formed in a surrounding part of the concave part in the outer peripheral part of the bonded member.

6 . The semiconductor device according to claim 5 , wherein

The semiconductor element includes a wide bandgap semiconductor.

7 . A method of manufacturing a semiconductor device for manufacturing the semiconductor device according to claim 1 , comprising:

(a) molding the resin case;

(b) molding the bonded member as a separate body separated from the resin case;

(c) forming the screw hole in the bonded member by machine processing;

(d) attaching the bonded member to the resin case; and

(e) bonding the heat radiation plate and the bonded member by the screw, thereby bonding the heat radiation plate and the resin case.