Light emitting device and light emitting module having the same

1 . A light emitting module, comprising:

a circuit board; and

a plurality of light emitters arranged on the circuit board side by side, an arrangement of the plurality of light emitters configured to follow a shape of the circuit board;

wherein the plurality of light emitters comprises a first light emitter and a second light emitter;

wherein the first light emitter is structured to emit a first light and is covered by a first resin transmitting the first light and the second light emitter is structured to emit a second light and is covered by a second resin transmitting the second light and spaced apart from the first resin, the first light and the second light including a plurality of peaks in a light spectrum; and

wherein at least one of the first light emitter or the second light emitter includes a grooved light emission source that emits light having CIE coordinates (x,y) within a range of 0.13<x<0.22 and 0<y<0.2 at a current density of 35 A/cm 2 , the grooved light emission source comprising:

an upper multiple quantum well structure including a plurality of first grooves;

a lower multiple quantum well structure including a plurality of second grooves; and

a spacer layer disposed between the lower multiple quantum well structure and the upper multiple quantum well structure, wherein a portion of the spacer layer and a portion of a first groove of the plurality of first grooves of the upper multiple quantum well structure are located within a second groove of the plurality of second grooves of the lower multiple quantum well structure.

2 . The light emitting module of claim 1 , wherein:

the first light emitter further includes a wavelength converter covering the first light emitter; and

the second light emitter includes the grooved light emission source and no wavelength converter and the second light includes a light spectrum having at least three emission peaks in a visible region without a wavelength converter.

3 . The light emitting module of claim 1 , wherein the second light emitter includes the grooved light emission source and no wavelength converter, wherein the second light includes a light spectrum having at least two emission peaks.

4 . The light emitting module of claim 1 , wherein

the plurality of second grooves of the lower multiple quantum well structure and the plurality of first grooves of the upper multiple quantum well structure overlap one another.

5 . The light emitting module of claim 4 , wherein a thickness of the spacer layer is less than depths of the plurality of second grooves of the lower multiple quantum well structure.

6 . The light emitting module of claim 1 , wherein well layers in the plurality of first grooves of the upper multiple quantum well structure have an Indium (In) content higher than an Indium (In) content of well layers in the plurality of second grooves of the lower multiple quantum well structure.

7 . The light emitting module of claim 4 , wherein the well layers in the plurality of first grooves of the upper multiple quantum well structure have an Indium (In) content equal to or higher than an Indium (In) content of the well layers of the lower multiple quantum well structure surrounding the plurality of second grooves of the lower multiple quantum well structure.

8 . The light emitting module of claim 1 , wherein the well layers in the plurality of first grooves of the upper multiple quantum well structure have an Indium (In) content lower than an Indium (In) content of the well layers of the upper multiple quantum well structure surrounding the plurality of first grooves of the upper multiple quantum well structure.

9 . The light emitting module of claim 1 , wherein

each of the upper multiple quantum well structure and the lower multiple quantum well structure includes a number of well layers and a number of barrier layers;

the spacer layer includes AlGaN or AlInGaN, and the spacer layer further includes an Al content higher than an Al content of a barrier layer in the lower multiple quantum well structure, and

wavelengths of emitted light are adjusted based on a quantity of the number of well layers and a quantity of the number of barrier layers in the upper multiple quantum well structure and the lower multiple quantum well structure; a composition of each of the number of well layers, the spacer layer, and a step coverage layer; and a thickness of the barrier layer.

10 . The light emitting module of claim 1 , wherein the grooved light emission source further comprises:

a first conductivity type semiconductor layer disposed under the lower multiple quantum well structure;

a second conductivity type semiconductor layer disposed on the upper multiple quantum well structure; and

a step coverage layer disposed between the upper multiple quantum well structure and the second conductivity type semiconductor layer, wherein the step coverage layer further includes AlGaN or AlInGaN.

11 . The light emitting module of claim 10 , wherein an Al content of the step coverage layer decreases as a distance from the upper multiple quantum well structure increases.

12 . The light emitting module of claim 10 , wherein the grooved light emission source further comprises a growth substrate disposed under the first conductivity type semiconductor layer.

13 . The light emitting module of claim 1 , further comprising:

a protection material covering the plurality of light emitters;

wherein the protection material includes a light diffuser.

14 . The light emitting module of claim 1 , further comprising:

a control unit for driving the plurality of light emitters.

15 . The light emitting module of claim 1 , wherein the circuit board includes a flexible board or a rollable board.

16 . A light emitting module, comprising:

a circuit board;

a plurality of light emitters arranged on the circuit board side by side, an arrangement of the plurality of light emitters configured to follow a shape of the circuit board;

wherein each of the plurality of light emitters includes:

a lower multiple quantum well structure;

an upper multiple quantum well structure; and

a spacer layer disposed between the lower multiple quantum well structure and the upper multiple quantum well structure,

wherein a first light emitter of the plurality of light emitters is covered by a first resin transmitting a first light and a second light emitter of the plurality of light emitters is covered by a second resin transmitting a second light, and wherein:

the first resin is spaced apart from the second resin;

the first light and the second light including a plurality of peaks in a light spectrum;

the upper multiple quantum well structure includes a first flat region and a first non-flat region arranged to the first flat region in a first direction;

the lower multiple quantum well structure includes a second flat region and a second non-flat region arranged relative to the second flat region in the first direction;

the second non-flat region and the first non-flat region overlap in a second direction, the second direction perpendicular to the first direction; and

a portion of the spacer layer and a portion of the upper multiple quantum well structure are located in the second non-flat region, and

an arrangement of the first flat region and the second flat region, the first non-flat region and the second non-flat region, and the spacer layer causes the first light to have CIE coordinates (x,y) within a range of 0.13<x<0.22 and 0<y<0.2 at a current density of 35 A/cm 2 .

17 . The light emitting module of claim 16 , wherein at least one of the first non-flat regions or the second non-flat regions comprises grooves.

18 . The light emitting device of claim 16 , wherein the light emitter emits light of a light spectrum having at least three emission peaks in a visible region without a wavelength converter.

19 . The light emitting device of claim 16 , wherein the first non-flat region further includes a plurality of first grooves; and

wherein well layers in the plurality of first grooves of the upper multiple quantum well structure have an Indium (In) content lower than an Indium (In) content of well layers of the upper multiple quantum well structure surrounding the plurality of first grooves.

20 . A light emitting module, comprising:

a circuit board; and

a plurality of light emitters arranged on the circuit board side by side, wherein each of the plurality of light emitters includes:

a lower multiple quantum well structure;

an upper multiple quantum well structure; and

a spacer layer disposed between the lower multiple quantum well structure and the upper multiple quantum well structure, wherein the light emitting device emits light of a light spectrum having at least three emission peaks in a visible region without a wavelength converter,

wherein a first light emitter of the plurality of light emitters is covered by a first resin transmitting a first light and a second light emitter of the plurality of light emitters is covered by a second resin transmitting a second light, and wherein:

the first resin is spaced apart from the second resin;

the first light and the second light including a plurality of peaks in a light spectrum;

the upper multiple quantum well structure includes a first flat region and a first groove region arranged to the first flat region in a first direction;

the lower multiple quantum well structure includes a second flat region and a second groove region arranged relative to the second flat region in the first direction;

the second groove region and the first groove region overlap in a second direction, the second direction perpendicular to the first direction;

a portion of the spacer layer and a portion of the first groove region of the upper multiple quantum well structure are located in the second groove region, and

an arrangement of the first flat region and the second flat region, the first groove region and the second groove region, and the spacer layer causes the first light to have CIE coordinates (x,y) within a range of 0.13<x<0.22 and 0<y<0.2 at a current density of 35 A/cm 2 .