Semiconductor device

Inventors: Robin Adam Simpson (Lincoln, GB); Michael David Nicholson (Lincoln, GB); Yangang Wang (Lincoln, GB)

Assignees: DYNEX SEMICONDUCTOR LIMITED; ZHUZHOU CRRC TIMES SEMICONDUCTOR CO. LTD

H10W90/00 H10W42/121 H10W70/20 H10W76/12 H10W76/138 H10W72/352 H10W90/736

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Quick Facts

Patent No.: US 12667010
App. No.: 18/009,383
Granted: Jun 23, 2026
Kind: B2

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Abstract

There is provided a semiconductor device 1 , comprising: a housing comprising a first housing electrode 4 and a second housing electrode 5 arranged at opposite sides of the housing; and a plurality of semiconductor units 30 arranged within the housing between the first and second housing electrodes 4, 5 and coupled to at least one of the first and second housing electrodes 4, 5 by pressure, wherein the plurality of semiconductor units 30 comprise a first semiconductor unit 30 - 1 and a second semiconductor unit 30 - 2 neighbouring the first semiconductor unit 30 - 1 ; wherein the first and/or second housing electrode comprises a plurality of pillars 10 , and the plurality of pillars comprise a first pillar 10 - 1 and a second pillar 10 - 2 electrically coupled to the first and second semiconductor units 30 - 1, 30 - 2 , respectively, and wherein a surface 16 of the first housing electrode 4 comprises a groove 15 , and a width W 1 of the groove 15 is less than a spacing S 2 between the first pillar 10 - 1 and the second pillar 10 - 2.

Claims (32)

1 . A semiconductor device, comprising:

a housing comprising a first housing electrode and a second housing electrode which are arranged at opposite sides of the housing; and

a plurality of semiconductor units arranged within the housing between the first and second housing electrodes and coupled to at least one of the first and second housing electrodes by pressure contact, wherein the plurality of semiconductor units comprise a first semiconductor unit and a second semiconductor unit neighbouring the first semiconductor unit;

wherein the first housing electrode comprises:

an electrode plate having an inner surface and an outer surface which is opposite to the inner surface, the inner surface facing an interior of the housing;

a plurality of pillars extending from the inner surface of the electrode plate along a first direction into the interior of the housing, wherein the plurality of pillars comprise a first pillar and a second pillar separated in a second direction orthogonal to the first direction and electrically coupled to the first and second semiconductor units, respectively; and

a groove extending in a third direction from the inner surface of the electrode plate into the electrode plate, the third direction being opposite the first direction, wherein a width of the groove in the second direction is less than a spacing between the first pillar and the second pillar and greater than a spacing between the first and second semiconductor units, and the groove has a depth in the third direction which is less than a thickness of the electrode plate between the inner surface and the outer surface.

2 . The semiconductor device according to claim 1 , wherein the depth of the groove is equal to or greater than approximately 50% of the thickness of the electrode plate.

3 . The semiconductor device according to claim 2 , wherein the depth of the groove is less than the thickness of the electrode plate by approximately 1 millimetre or more.

4 . The semiconductor device according to claim 1 , wherein the width of the groove is less than or equal to approximately 2 millimetres.

5 . The semiconductor device according to claim 1 , wherein the first housing electrode comprises a first area and a second area contacting the first and second semiconductor units, respectively, and the groove is arranged between the first area and the second area.

6 . The semiconductor device according to claim 1 , wherein a centre line of the groove is equidistant from the first and second semiconductor units.

7 . The semiconductor device according to claim 1 , wherein the groove extends along a circular path on the inner surface of the electrode plate of the first housing electrode.

8 . The semiconductor device according to claim 1 , wherein the groove extends along a straight path.

9 . The semiconductor device according to claim 1 , wherein the groove is a first groove, and the first housing electrode comprises a plurality of grooves, the plurality of grooves comprising the first groove.

10 . The semiconductor device according to claim 9 , wherein a subset or all of the plurality of grooves form one or more of: a grid pattern, a radial pattern and a circular pattern.

11 . The semiconductor device according to claim 1 , wherein the first housing electrode comprises first and second sub-electrodes which are stacked on top of one another, and wherein the groove is arranged at a surface of the first sub-electrode, and a surface of the second sub-electrode comprises a further groove.

12 . The semiconductor device according to claim 11 , wherein the first sub-electrode is coupled to the second sub-electrode by pressure.

13 . The semiconductor device according to claim 1 , wherein each of the semiconductor units comprises a semiconductor chip.

14 . The semiconductor device according to claim 13 , wherein at least one of the semiconductor units further comprises a strain buffer arranged between a surface of the respective semiconductor chip and the first housing electrode.

15 . The semiconductor device according to claim 1 , wherein the housing further comprises an electrical insulator arranged between the first and second housing electrodes.

16 . The semiconductor device according to claim 1 , wherein:

a surface of the second housing electrode comprises a further groove; and

a width of the further groove is less than the spacing between the first and second pillars.

17 . A method of manufacturing a semiconductor device, comprising:

providing a housing, wherein the housing comprises a first housing electrode and a second housing electrode arranged at opposite sides of the housing;

arranging a plurality of semiconductor units within the housing between the first and second housing electrodes; and

coupling at least one of the first and second housing electrodes to the plurality of semiconductor units by pressure contact;

wherein the plurality of semiconductor units comprise a first semiconductor unit and a second semiconductor unit neighbouring the first semiconductor unit, and wherein the first housing electrode comprises:

an electrode plate having an inner surface and an outer surface which is opposite to the inner surface, the inner surface facing an interior of the housing;

a plurality of pillars extending from the inner surface of the electrode plate into the interior of the housing along a first direction, wherein the plurality of pillars comprise a first pillar and a second pillar separated in a second direction orthogonal to the first direction and electrically coupled to the first and second semiconductor units, respectively; and

a groove extending in a third direction from the inner surface of the electrode plate into the electrode plate, the third direction being opposite to the first direction, wherein a width of the groove in the second direction is less than a spacing between the first pillar and the second pillar and greater than a spacing between the first and second semiconductor units, and the groove has a depth in the third direction which is less than a thickness of the electrode plate between the inner surface and the outer surface.