Method for manufacturing semiconductor module
A method for manufacturing a semiconductor module includes arranging an insulating wiring board on a lower die, arranging sintered materials at a plurality of points on the insulating wiring board, arranging each semiconductor chip on the sintered materials, arranging each buffer material individually on the semiconductor chips, arranging, above the lower die, an upper die including protrusions at points corresponding to arrangement positions of the semiconductor chips so that the protrusions correspond to the semiconductor chips, and sintering by pressurizing and heating the sintered materials by the protrusions through the buffer materials and the semiconductor chips.
1 . A method of manufacturing a semiconductor module comprising:
arranging an insulating wiring board on a lower die;
arranging, at a plurality of locations on the insulating wiring board, a plurality of sinterable materials respectively corresponding to the plurality of locations;
arranging, on the plurality of sinterable materials, a plurality of semiconductor chips respectively corresponding to the plurality of sinterable materials;
arranging, on the plurality of semiconductor chips, a plurality of buffer materials respectively corresponding to the plurality of semiconductor chips, the plurality of buffer materials having a Poisson's ratio less than or equal to 0.2 such that, when pressurized, the plurality of buffer materials compress along a compression dimension more than the plurality of buffer materials expand along a dimension non-parallel to the compression dimension;
arranging, above the lower die, an upper die including a plurality of protrusions respectively corresponding to the plurality of semiconductor chips such that the plurality of protrusions are at locations corresponding to arrangement locations of the plurality of semiconductor chips; and
sintering the plurality of sinterable materials by pressurizing and heating the plurality of sinterable materials through the plurality of buffer materials and the plurality of semiconductor chips with the plurality of protrusions.
2 . The method of manufacturing the semiconductor module of claim 1 , wherein the plurality of sinterable materials are in a paste or sheet form.
3 . The method of manufacturing the semiconductor module of claim 1 , wherein the plurality of buffer materials have a heat resistance of 250° C. or higher, a hardness of 80 points±5% on a type A durometer according to JIS K 6253, and a thickness of 1.5 mm or more.
4 . The method of manufacturing the semiconductor module of claim 1 , wherein heights of surfaces of the plurality of semiconductor chips facing a side of the plurality of buffer materials are different, and
the method of manufacturing further includes:
arranging one or more spacer members configured to reduce a difference between the heights on the plurality of buffer materials such that the difference between the heights is reduced.
5 . The method of manufacturing the semiconductor module of claim 4 , wherein the difference between the heights is 10 μm or more, and
the method of manufacturing further includes:
arranging the one or more spacer members a semiconductor chip of the plurality of semiconductor chips that has a lowest height of the heights.
6 . The method of manufacturing the semiconductor module of claim 1 , further comprising:
before arranging the plurality of semiconductor chips on the plurality of sinterable materials, arranging, on the insulating wiring board, a positioning jig including a plurality of opening portions respectively corresponding to the plurality of semiconductor chips at the locations corresponding to the arrangement locations of the plurality of semiconductor chips.
7 . The method of manufacturing the semiconductor module of claim 6 , further comprising arranging, on the plurality of semiconductor chips, the plurality of buffer materials such that at least a portion of the plurality of buffer materials is in an opening portion of the positioning jig.
8 . The method of manufacturing the semiconductor module of claim 6 , wherein the sintering includes inserting each protrusion of the plurality of protrusions into a corresponding opening portion of the plurality of opening portions.
9 . The method of manufacturing the semiconductor module of claim 6 , wherein the arranging the plurality of buffer materials includes arranging the plurality of buffer materials in respectively corresponding opening portions such that a portion of each buffer material of the plurality of buffer materials protrudes from a respectively corresponding opening portion of the plurality of opening portions.
10 . The method of manufacturing the semiconductor module of claim 6 , wherein the sintering includes vertically pressurizing the plurality of buffer materials by a first force such that the plurality of buffer materials expand laterally with a second force less than the first force which is thereby applied to a plurality of sidewalls respectively corresponding to the plurality of opening portions.