IP Library › Granted Patent US 12667030
Granted Patent B2
US 12667030 · App. 17/744,397 · Granted Jun 23, 2026

Electronic chips including J-shaped substrate sidewalls

Inventors: Olivier Ory (Tours, FR); Michael De Cruz (Monnaie, FR)
Assignee: STMICROELECTRONICS (TOURS) SAS
H10W90/701H10W70/65H10W70/69H10W72/01251H10W72/01261H10W72/07253H10W72/232H10W72/234
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Quick Facts
Patent No.
US 12667030
App. No.
17/744,397
Granted
Jun 23, 2026
Kind
B2
Abstract

An electronic chip including a semiconductor substrate carrying at least one metal contact extending, within the thickness of the substrate, along at least one flank of the chip.

Claims (51)

1 . A device, comprising:

a substrate including a first surface, a second surface opposite to the first surface, and a sidewall transverse to the first surface and the second surface;

an interconnect layer on the first surface of the substrate, the interconnect layer including a conductive pad;

an insulating layer is on and covers a first portion of the sidewall of the substrate;

a conductive layer is coupled to the conductive pad at the first surface of the substrate, the conductive layer is on the insulating layer and covers the insulating layer, and the conductive layer is separated from the sidewall of substrate by the insulating layer;

a first resin layer extends from the second surface of the substrate to the insulating layer and is on and covers a second portion of the sidewall of the substrate; and

a second resin layer is on the second surface of the substrate, and

wherein the first resin layer is on the second resin layer.

2 . The device of claim 1 , wherein the first portion of the sidewall is smaller than the second portion of the sidewall.

3 . The device of claim 1 , wherein:

the insulating layer includes a first end sidewall substantially coplanar with the second portion of the sidewall of the substrate; and

the conductive layer includes a second end sidewall substantially coplanar with the second portion of the sidewall of the substrate and the first end sidewall of the insulating layer.

4 . The device of claim 3 , wherein the first resin layer covers the first end sidewall of the insulating layer and the second end sidewall of the conductive layer.

5 . The device of claim 1 , wherein the first portion of the sidewall is offset from the second portion of the sidewall.

6 . The device of claim 1 , wherein sidewall surfaces of the insulating layer, the conductive layer, the first resin layer, and the second resin layer are substantially coplanar with each other and are spaced apart from the sidewall of the substrate.

7 . The device of claim 1 , wherein the first resin layer includes a negative photosensitive resin material.

8 . The device of claim 1 , wherein the first resin layer includes an end surface substantially coplanar and flush with the first surface of the substrate.

9 . The device of claim 8 , wherein the insulating layer has an L-shape.

10 . A device, comprising:

a substrate including a first surface, a second surface opposite to the first surface, and a sidewall transverse to the first surface and the second surface;

an interconnect layer on the first surface of the substrate, the interconnect layer including a conductive pad;

an insulating layer is on and covers a first portion of the sidewall of the substrate and is on and covers a curved portion of the sidewall;

a conductive layer is coupled to the conductive pad at the first surface of the substrate, the conductive layer is on the insulating layer and covers the insulating layer, and the conductive layer is separated from the sidewall of substrate by the insulating layer;

a first resin layer extends from the second surface of the substrate to the insulating layer and is on and covers a second portion of the sidewall of the substrate; and

a second resin layer is on the second surface of the substrate, and

wherein the curved portion of the sidewall extends from the first portion of the sidewall to the second portion of the sidewall, and wherein the first resin layer is on the second resin layer.

11 . The device of claim 10 , wherein:

the insulating layer includes a first end sidewall;

the conductive layer includes a second end sidewall; and

the first end sidewall and the second end sidewall are coplanar with second portion of the sidewall of the substrate.

12 . The device of claim 11 , wherein the first resin layer is on and covers the first end sidewall of the insulating layer.

13 . The device of claim 12 , wherein the first resin layer is on and covers the second end sidewall of the conductive layer.

14 . The device of claim 10 , wherein the first resin layer includes a first sidewall spaced apart from the substrate, the insulating layer, and the conductive layer, and the second resin layer includes a second sidewall coplanar with the first sidewall.

15 . A device, comprising:

a substrate including a first surface, a second surface opposite to the first surface, a J-shaped sidewall that extends from the first surface, and a sidewall that extends from the second surface to the J-shaped sidewall;

an interconnect layer on the first surface of the substrate, the interconnect layer including a conductive pad;

an insulating layer is on and covers the J-shaped sidewall of the substrate;

a conductive layer is coupled to the conductive pad at the first surface of the substrate, the conductive layer is on the insulating layer and covers the insulating layer, and the conductive layer is separated from the J-shaped sidewall of substrate by the insulating layer;

a first resin layer extends from the second surface of the substrate to the conductive layer and is on and covers the sidewall of the substrate; and

a second resin layer is on the second surface of the substrate, and

wherein the first resin layer is on the second resin layer.

16 . The device of claim 15 , wherein:

the insulating layer is a J-shaped insulating layer; and

the conductive layer is a J-shaped conductive layer.

17 . The device of claim 16 , wherein:

the insulating layer includes a first end sidewall coplanar with the sidewall of the substrate;

the conductive layer includes a second end sidewall coplanar with the sidewall of the substrate and the first end sidewall.

18 . The device of claim 17 , wherein:

the first resin layer includes a first external sidewall spaced apart from the first end sidewall of the insulating layer, the second end sidewall of the conductive layer, and the sidewall of the substrate; and

the second resin layer includes a second external sidewall that is coplanar with the first external sidewall.

19 . The device of claim 15 , wherein the first resin layer is on the interconnect layer.