IP Library Granted Patent US 12667451
Granted Patent B2
US 12667451 · App. 17/267,245 · Granted Jun 30, 2026

Atmospheric pressure plasma jet device

Inventors: Michael Bergmann (Freiburg, DE); Loic Ledernez (Freiburg, DE); Markus Altenburger (Freiburg, DE); Samuel Liebs (Freiburg, DE)
Assignee: Freiburger Medizintechnik GmbH
A61C8/0013A61L2/14H05H1/42H05H1/46A61L2103/00A61L2202/14H05H2245/30H05H2245/36
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Quick Facts
Patent No.
US 12667451
App. No.
17/267,245
Granted
Jun 30, 2026
Kind
B2
Abstract

The present invention refers to an atmospheric pressure plasma jet device for disinfecting and coating a dental implant. The device comprises a gas supply and a nozzle for providing a gas to a tip of the nozzle wherein the nozzle is a single electrode nozzle having a first electrode. The device comprises further a precursor supply for providing a coating precursor to the nozzle, a second electrode and a connector for electronically connecting the second electrode with the dental implant. In another aspect the present invention refers to a system for disinfecting and coating.

Claims (20)

1 . An atmospheric pressure plasma jet device for disinfecting and coating a dental implant comprising

a gas supply and a nozzle for providing a gas to a tip of the nozzle wherein the nozzle is of a single-electrode type having a first electrode with an exposed end portion disposed within the nozzle,

a precursor supply for providing a coating precursor to the nozzle,

a second electrode and a connector for electronically connecting the second electrode with the dental implant for the dental implant to serve as counter electrode for the generation of plasma, such that the plasma is generated by an electric field between the exposed end portion of the first electrode and the counter electrode, and that the plasma is a directed plasma jet towards the implant.

2 . The plasma jet device according to claim 1 , wherein the precursor supply comprises a gas wash bottle for providing the precursor in a solution or a second gas supply and/or wherein the precursor supply is activatable.

3 . The plasma jet device according to claim 1 , wherein the first electrode is a conductor arranged within the nozzle.

4 . The plasma jet device according to claim 1 , being adapted to provide electrical pulses at the first electrode for producing the atmospheric pressure plasma jet at the tip of the nozzle.

5 . The plasma jet device according to claim 1 , wherein pulses at the first electrode have at least one of a current peak value of 0.1 to 500 mA, and a frequency of 1 Hz to 500 MHz.

6 . The plasma jet device according to claim 1 , wherein pulses at the first electrode are one of a rectangular, parabolic, saw tooth or a sinus shape and/or have a pulse duration of 10 ns to 10 ms and/or are monopolar.

7 . The plasma jet device according to claim 1 , wherein the second electrode is connected with ground.

8 . The plasma jet device according to claim 1 , wherein a maximum outer dimension of the nozzle is less than 5 mm and/or wherein the nozzle is made of a plastic.

9 . The plasma jet device according to claim 1 , wherein the connector is designed such that a distance in use between the first electrode and the dental implant is between 0.1 and 10 mm.

10 . The plasma jet device according to claim 1 , wherein the connector comprises a single or dual contact for connecting the second electrode with the dental implant.

11 . The plasma jet device according to claim 1 , wherein the connector comprises a screwing connection for connecting the connector with the dental implant and/or wherein the external parts of the connector comprise an electrical insulation.

12 . The plasma jet device according to claim 1 , wherein the connector comprises a clamping device adapted to be inserted into bore hole of the dental implant.

13 . A system for disinfecting and coating comprising a plasma jet device according to claim 1 and a dental implant.

14 . The system according to claim 13 wherein the dental implant comprises an implant itself and an abutment wherein the connector is adapted to engage with the implant itself and/or the abutment.

15 . The system according to claim 14 , wherein the implant itself and/or the abutment are made of metal or a ceramic material.

16 . The plasma jet device according to claim 1 , wherein the exposed end portion of the first electrode is arranged in the tip of the nozzle.

17 . The plasma jet device according to claim 1 , wherein pulses at the first electrode have a peak value of 100V to 2500V.