System and method for implantable neural sensing and stimulating probes
A spinal sensing and stimulating device is described. The spinal sensing and stimulating device includes an electrode array, supported by a substrate. The spinal sensing and stimulating device further includes a data processing unit configured to digitize a neural signal detected from a medullary/spinal cord implant of a patient through the electrode array.
1 . A spinal sensing and stimulating device, comprising:
a complementary metal oxide semiconductor (CMOS) electrode array, supported by a substrate and comprising a plurality of semiconductor electrodes sized and arranged to enable direct stimulation of specific neurons and/or axons of a medullary/spinal cord implant of a patient; and
a data processing unit configured to digitize a neural signal detected from the medullary/spinal cord implant of the patient through the plurality of semiconductor electrodes of the CMOS electrode array.
2 . The spinal sensing and stimulating device of claim 1 , in which a semiconductor electrode of the CMOS electrode array comprises a plurality of pillars supported by the substrate.
3 . The spinal sensing and stimulating device of claim 2 , in which the CMOS electrode array and the plurality of pillars are coated with a conductive material, comprising titanium nitride (TiN), gold (Au), and/or platinum (Pt).
4 . The spinal sensing and stimulating device of claim 2 , in which the plurality of pillars comprise semiconductor nanopillars and/or semiconductor micropillars.
5 . The spinal sensing and stimulating device of claim 4 , in which the semiconductor nanopillars and/or the semiconductor micropillars are arranged periodically with constant spacing or arranged aperiodically, in a fractal-like pattern to increase an electrode adaptability to a target tissue.
6 . The spinal sensing and stimulating device of claim 4 , in which the plurality of pillars comprise a flat portion insulated with an insulator and/or an insulator stack.
7 . The spinal sensing and stimulating device of claim 6 , in which the insulator and/or the insulator stack comprises silicon oxide (SiO 2 ), silicon nitride (SiN), hafnium oxide (HfO 2 ), titanium oxide (TiO 2 ), and aluminum oxide (Al 2 O 3 ).
8 . The spinal sensing and stimulating device of claim 6 , in which the plurality of pillars further comprise a vertical portion coupled to the flat portion and comprising an electrically conductive surface composed of titanium nitride (TiN), gold (Au), and/or platinum (Pt).
9 . The spinal sensing and stimulating device of claim 1 , in which the CMOS electrode array comprises a nanoneedle array composed of vertical nanoscale posts arranged on a flat electrode.
10 . The spinal sensing and stimulating device of claim 1 , in which the substrate comprises an insulated silicon substrate, having a thermal silicon oxide (SiO 2 ) layer.
11 . The spinal sensing and stimulating device of claim 1 , in which the data processing unit is further configured to generate a digital zero (0) in response to an action potential detected from the neural signal, and a digital one (1) in response to an absence of the detection of the action potential from the neural signal.
12 . The spinal sensing and stimulating device of claim 1 , in which the data processing unit is further configured to determine a mental state of the patient according to the neural signal detected from the patient.