IP Library Granted Patent US 12667911
Granted Patent B2
US 12667911 · App. 18/015,558 · Granted Jun 30, 2026

Laser machining method and method for manufacturing semiconductor member

Inventor: Takeshi Sakamoto (Hamamatsu, JP)
Assignee: HAMAMATSU PHOTONICS K.K.
B23K26/0648B23K26/062B23K26/38
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Quick Facts
Patent No.
US 12667911
App. No.
18/015,558
Granted
Jun 30, 2026
Kind
B2
Abstract

A laser processing method includes a laser processing step of converging laser light to an object including a first surface and a second surface opposite to the first surface using the first surface as an incident surface to form a converging spot of the laser light, while relatively moving the converging spot with respect to the object, thereby performing laser processing in the object, the object being provided with a grinding planned area along the incident surface, and the laser processing step including a first forming step of relatively moving, while setting a position of the converging spot in a Z direction intersecting with the incident surface at a first Z position, the converging spot along a line extended in an X direction along the incident surface, thereby forming a first modified region and a first fracture extended from the first modified region in the object.

Claims (19)

1 . A laser processing method comprising:

a laser processing step of converging laser light to an object including a first surface and a second surface opposite to the first surface using the first surface as an incident surface to form a converging spot of the laser light, while relatively moving the converging spot with respect to the object, thereby performing laser processing in the object, wherein

the object is provided with a grinding planned area along the incident surface, and

the laser processing step includes

a first forming step of relatively moving, while setting a position of the converging spot in a Z direction intersecting with the incident surface at a first Z position, the converging spot along a line extended in an X direction along the incident surface, thereby forming a first modified region and a first fracture extended from the first modified region in the object; and

a second forming step of relatively moving the converging spot along the line, while setting a position of the converging spot in the Z direction at a second Z position that is closer to the incident surface than the first Z position, thereby forming a second modified region and a second fracture extended from the second modified region,

in the first forming step, a position of the converging spot in a Y direction along the incident surface intersecting with the X direction is set at a first Y position, and the first fracture is formed so as to go along the Z direction in a YZ plane including the Y direction and the Z direction,

in the second forming step, a position of the converging spot in the Y direction is set at a second Y position shifted from the first Y position, and the second fracture is formed so as to be inclined with respect to the Z direction in the YZ plane and be located within the grinding planned area, and

in the second forming step, the laser light is modulated such that a beam shape of the converging spot in the YZ plane has an inclined shape that is inclined in a shift direction at least on the incident surface side with respect to the center of the converging spot, thereby forming the second fracture so as to be inclined in the shift direction in the YZ plane.

2 . The laser processing method according to claim 1 , wherein

in the second forming step, the second fracture is formed so as to be inclined with respect to a cleavage plane of the object in the YZ plane.

3 . The laser processing method according to claim 1 , wherein

in the first forming step, the converging spots are formed in each of a plurality of the first Z positions having different positions in the Z direction and are relatively moved, thereby forming a plurality of the first modified regions arrayed in the Z direction in the YZ plane, and forming the first fracture so as to be extended through the plurality of first modified regions.

4 . The laser processing method according to claim 1 , wherein

in the first forming step, the first fracture is formed so as to reach the second surface.

5 . The laser processing method according to claim 1 , wherein

the first forming step and the second forming step are simultaneously performed on one line set in the object by branching the laser light.

6 . A method for manufacturing a semiconductor member from an object including a semiconductor, wherein

the object is ground to remove at least the second fracture from the object after the laser processing step included in the laser processing method according to claim 1 is performed, thereby forming the semiconductor member from the object.