Development of high power textured piezoelectric ceramics with ultrahigh electromechanical properties for large driving field applications
Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO 3 (BT) template.
1 . A piezoelectric composition, comprising:
0.24 Pb(In 1/2 Nb 1/2 )O 3 -0.42Pb(Mg 1/3 Nb 2/3 )O 3 -0.34PbTiO 3 (PIN-PMN-PT) doped with MnO 2 and CuO;
wherein 0.0 wt %<CuO <0.5 wt %; and
wherein MnO 2 is 2 mol %.
2 . The piezoelectric composition of claim 1 , wherein:
the PIN-PMN-PT includes 2 mol % MnO 2 and >0.0 wt % CuO, wherein d 33 =370 pC/N, Q m =1693, E c =9.33 KV/cm, and a Q m ·d 33 ·E c =0.584;
the PIN-PMN-PT includes 0.125 wt % CuO and 2 mol % MnO 2 , wherein d 33 =363 pC/N, Q m =2800, E c =10.1 KV/cm, and a Q m ·d 33 ·E c =1.03;
the PIN-PMN-PT includes 0.25 wt % CuO and 2 mol % MnO 2 , wherein d 33 =374 pC/N, Q m =2096, E c =9.81 KV/cm, and a Q m ·d 33 ·E c =0.769; or
the PIN-PMN-PT includes 0.5 wt % CuO and 2 mol % MnO 2 , wherein d 33 =372 pC/N, Q m =1921, E c =10.1 KV/cm, and a Q m ·d 33 ·E c =0.726.
3 . A piezoelectric composition, comprising:
0.24 Pb(In 1/2 Nb 1/2 )O 3 -0.42Pb(Mg 1/3 Nb 2/3 )O 3 -0.34PbTiO 3 (PIN-PMN-PT) doped with MnO 2 ;
wherein MnO 2 is 2 mol %; and
wherein the composition is textured via a templated grain growth (TGG) method using a BaTiO 3 template.
4 . The piezoelectric composition of claim 3 , wherein the BaTiO 3 content is 0.0 vol. %<BaTiO 3 ≤5 vol. %.
5 . The piezoelectric composition of claim 3 , wherein the PIN-PMN-PT is doped with CuO.
6 . The piezoelectric composition of claim 5 , wherein the composition has 0.0 wt %<CuO≤0.5 wt %.
7 . The piezoelectric composition of claim 5 , wherein the PIN-PMN-PT includes 0.25 wt % CuO and 2 mol % MnO 2 , wherein d 33 >710 pC/N, k 31 =0.52, and Q m ≈950.
8 . The piezoelectric composition of claim 3 , wherein:
the PIN-PMN-PT includes 1 vol. % BaTiO 3 , wherein d 33 =457 pC/N, Q m =1249, and T c =207° C.;
the PIN-PMN-PT includes 2 vol. % BaTiO 3 , wherein d 33 =517 pC/N, Q m =1148, and T c =205° C.;
the PIN-PMN-PT includes 3 vol. % BaTiO 3 , wherein d 33 =529 pC/N, Q m =1023, and T c =205° C.; or
the PIN-PMN-PT includes 5 vol. % BaTiO 3 , wherein d 33 =475 pC/N, Q m =770, and T c =199° C.