IP Library Granted Patent US 12668728
Granted Patent B2
US 12668728 · App. 18/043,731 · Granted Jun 30, 2026

Adhesive agent for semiconductors, and semiconductor device and method for manufacturing same

Inventors: Toshiyasu Akiyoshi (Tokyo, JP); Ryuta Kawamata (Tokyo, JP)
C09J163/00C09J11/06H10W90/00C09J2203/326H10W72/07331H10W72/07332H10W72/07338H10W72/354H10W74/15H10W90/297H10W90/722H10W90/724H10W90/732H10W90/734
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Quick Facts
Patent No.
US 12668728
App. No.
18/043,731
Granted
Jun 30, 2026
Kind
B2
Abstract

An adhesive for a semiconductor, the adhesive containing a thermoplastic resin, a thermosetting resin, a curing agent, and a flux compound having at least one carboxyl group, in which the flux compound has a structure in which an α-position carbon of the carboxyl group is substituted by at least one electron-withdrawing group.

Claims (33)

1 . An adhesive for a semiconductor, the adhesive comprising: a thermoplastic resin; a thermosetting resin; a curing agent; and a flux compound having at least one carboxyl group,

wherein the flux compound has a structure in which an α-position carbon of the carboxyl group is substituted by at least one electron-withdrawing group, and

wherein the flux compound comprises a compound represented by General Formula (2-1) or (2-2) below:

wherein R 1 represents an electron-withdrawing group, R 2 represents a hydrogen atom or an electron-withdrawing group, R 3 represents a hydrogen atom or a monovalent organic group, and n represents an integer of 0 to 15, provided that a plurality of R 3 's are the same as or different from each other.

2 . The adhesive for a semiconductor according to claim 1 , wherein the flux compound represented by General Formula (2-1) is a compound represented by General Formula (3-1), and wherein the flux compound represented by General Formula (2-2) is a compound represented by General Formula (3-2), as shown below:

wherein m represents an integer of 0 to 10.

3 . The adhesive for a semiconductor according to claim 1 , wherein a melting point of the flux compound is 170° C. or lower.

4 . The adhesive for a semiconductor according to claim 1 , wherein the thermosetting resin comprises an epoxy resin.

5 . The adhesive for a semiconductor according to claim 1 , wherein the curing agent comprises an amine-based curing agent.

6 . The adhesive for a semiconductor according to claim 1 , wherein the curing agent comprises an imidazole-based curing agent.

7 . The adhesive for a semiconductor according to claim 6 , wherein the imidazole-based curing agent comprises a triazine ring.

8 . A method for manufacturing a semiconductor device in which connection portions of a semiconductor chip and a wiring circuit substrate are electrically connected to each other or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising:

a sealing step of curing the adhesive for a semiconductor according to claim 1 by applying heat under a pressurized atmosphere to seal at least one of the connection portions with the cured adhesive for a semiconductor.

9 . The method for manufacturing a semiconductor device according to claim 8 , further comprising, before the sealing step:

a step of disposing a plurality of semiconductor chips on a stage; and

a temporarily fixing step of sequentially disposing another semiconductor chip on each of the plurality of semiconductor chips disposed on the stage with the adhesive for a semiconductor interposed therebetween while the stage is heated to 60 to 155° C. to obtain a plurality of laminates in which the semiconductor chip, the adhesive for a semiconductor, and the other semiconductor chip are laminated in this order.

10 . The method for manufacturing a semiconductor device according to claim 8 , further comprising, before the sealing step:

a step of disposing a wiring circuit substrate or a semiconductor wafer on a stage; and

a temporarily fixing step of sequentially disposing a plurality of semiconductor chips on the wiring circuit substrate or the semiconductor wafer disposed on the stage with the adhesive for a semiconductor interposed therebetween while the stage is heated to 60 to 155° C. to obtain a laminate in which the wiring circuit substrate, the adhesive for a semiconductor, and the plurality of semiconductor chips are laminated in this order or a laminate in which the semiconductor wafer, the adhesive for a semiconductor, and the plurality of semiconductor chips are laminated in this order.

11 . A semiconductor device in which connection portions of a semiconductor chip and a wiring circuit substrate are electrically connected to each other or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, at least one of the connection portions being sealed with a cured product of the adhesive for a semiconductor according to claim 1 cured by applying heat under a pressurized atmosphere.

12 . A method for manufacturing a semiconductor device in which connection portions of a semiconductor chip and a wiring circuit substrate are electrically connected to each other or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising:

a sealing step of curing an adhesive for a semiconductor by applying heat under a pressurized atmosphere to seal at least one of the connection portions with the cured adhesive for a semiconductor,

wherein the adhesive for a semiconductor comprises: a thermoplastic resin; a thermosetting resin; a curing agent; and a flux compound having at least one carboxyl group, and

wherein the flux compound has a structure in which an α-position carbon of the carboxyl group is substituted by at least one electron-withdrawing group.

13 . The method for manufacturing a semiconductor device according to claim 12 , further comprising, before the sealing step:

a step of disposing a plurality of semiconductor chips on a stage; and

a temporarily fixing step of sequentially disposing another semiconductor chip on each of the plurality of semiconductor chips disposed on the stage with the adhesive for a semiconductor interposed therebetween while the stage is heated to 60 to 155° C. to obtain a plurality of laminates in which the semiconductor chip, the adhesive for a semiconductor, and the other semiconductor chip are laminated in this order.

14 . The method for manufacturing a semiconductor device according to claim 12 , further comprising, before the sealing step:

a step of disposing a wiring circuit substrate or a semiconductor wafer on a stage; and

a temporarily fixing step of sequentially disposing a plurality of semiconductor chips on the wiring circuit substrate or the semiconductor wafer disposed on the stage with the adhesive for a semiconductor interposed therebetween while the stage is heated to 60 to 155° C. to obtain a laminate in which the wiring circuit substrate, the adhesive for a semiconductor, and the plurality of semiconductor chips are laminated in this order or a laminate in which the semiconductor wafer, the adhesive for a semiconductor, and the plurality of semiconductor chips are laminated in this order.

15 . A semiconductor device in which connection portions of a semiconductor chip and a wiring circuit substrate are electrically connected to each other or a semiconductor device in which connection portions of a plurality of semiconductor chips are electrically connected to each other, at least one of the connection portions being sealed with a cured product of an adhesive for a semiconductor cured by applying heat under a pressurized atmosphere,

wherein the adhesive comprises: a thermoplastic resin; a thermosetting resin; a curing agent; and a flux compound having at least one carboxyl group, and

wherein the flux compound has a structure in which an α-position carbon of the carboxyl group is substituted by at least one electron-withdrawing group.