Method of manufacturing semiconductor device, method of washing semiconductor manufacturing apparatus, and method of measuring cleanliness of washing solution

1 . A method of manufacturing a semiconductor device comprising:

Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain an amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid, wherein the oscillator includes a crystal oscillator sensor including an adsorption layer that adsorbs impurities in the chemical liquid and a crystal oscillator, and the adsorption layer is made of at least one material selected from the group including Si, Au, SiO 2 , SiOC, Cu, Co, W, Ti, TiN, Ta, and TaN;

Step 2 of confirming whether or not an amount of change in the resonance frequency of the chemical liquid falls within a permissible range of an amount of change in the resonance frequency based on a preset purity of the chemical liquid; and

Step 3 of using the chemical liquid confirmed in Step 2 in manufacturing a semiconductor device.

2 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein the manufacturing of the semiconductor device in Step 3 has a lithography step using the chemical liquid.

3 . The method of manufacturing a semiconductor device according to claim 1 , further comprising a concentration step of concentrating the chemical liquid before Step 1.

4 . The method of manufacturing a semiconductor device according to claim 1 , further comprising a step of washing the oscillator before Step 1.

5 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein in Step 1, the chemical liquid is circulated and supplied to the oscillator, and the oscillator is brought into contact with the chemical liquid to obtain the amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid.

6 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein Step 1 is performed while a temperature of the chemical liquid is kept constant.

7 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein the chemical liquid in Step 1 contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal elements is 0.01 mass ppq to 10 mass ppb.

8 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein the oscillator further includes

an oscillation unit that oscillates the oscillator at a resonance frequency, and a detection unit that is connected to the crystal oscillator sensor and detects an amount of change in the resonance frequency of the crystal oscillator resulting from the contact with the chemical liquid are provided.

9 . The method of manufacturing a semiconductor device according to claim 8 ,

wherein a supply unit that supplies the chemical liquid to the crystal oscillator sensor and brings the chemical liquid into contact with the crystal oscillator sensor is provided, and

Step 1 has a step of feeding the chemical liquid to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

10 . The method of manufacturing a semiconductor device according to claim 8 ,

wherein the chemical liquid is allowed to flow in one direction to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

11 . The method of manufacturing a semiconductor device according to claim 1 ,

wherein in Step 1, at least a part of a liquid contact portion coming into contact with the chemical liquid is made of a fluorine-based resin.

12 . A method of washing a semiconductor manufacturing apparatus comprising:

Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain an amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid, wherein the oscillator includes a crystal oscillator sensor including an adsorption layer that adsorbs impurities in the chemical liquid and a crystal oscillator, and the adsorption layer is made of at least one material selected from the group including Si, Au, SiO 2 , SiOC, Cu, Co, W, Ti, TiN, Ta, and TaN;

Step 2 of confirming whether or not an amount of change in the resonance frequency of the chemical liquid falls within a permissible range of an amount of change in the resonance frequency based on a preset purity of the chemical liquid; and

Step 3 of using the chemical liquid confirmed in Step 2 in washing a semiconductor manufacturing apparatus.

13 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein the washing of the semiconductor manufacturing apparatus in Step 3 has a step of feeding the chemical liquid to a liquid feeding unit of the semiconductor manufacturing apparatus.

14 . The method of washing a semiconductor manufacturing apparatus according to claim 12 , further comprising a concentration step of concentrating the chemical liquid before Step 1.

15 . The method of washing a semiconductor manufacturing apparatus according to claim 12 , further comprising a step of washing the oscillator before Step 1.

16 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein in Step 1, the chemical liquid is circulated and supplied to the oscillator, and the oscillator is brought into contact with the chemical liquid to obtain the amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid.

17 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein Step 1 is performed while a temperature of the chemical liquid is kept constant.

18 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein the chemical liquid in Step 1 contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal elements is 0.01 mass ppq to 10 mass ppb.

19 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein the oscillator further includes

an oscillation unit that oscillates the oscillator at a resonance frequency, and a detection unit that is connected to the crystal oscillator sensor and detects an amount of change in the resonance frequency of the crystal oscillator resulting from the contact with the chemical liquid are provided.

20 . The method of washing a semiconductor manufacturing apparatus according to claim 19 ,

wherein a supply unit that supplies the chemical liquid to the crystal oscillator sensor and brings the chemical liquid into contact with the crystal oscillator sensor is provided, and

Step 1 has a step of feeding the chemical liquid to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

21 . The method of washing a semiconductor manufacturing apparatus according to claim 19 ,

wherein the chemical liquid is allowed to flow in one direction to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

22 . The method of washing a semiconductor manufacturing apparatus according to claim 12 ,

wherein in Step 1, at least a part of a liquid contact portion coming into contact with the chemical liquid is made of a fluorine-based resin.

23 . A method of measuring cleanliness of a washing solution comprising:

Step 1 of bringing an oscillator into contact with a chemical liquid containing an organic solvent as a main component to obtain an amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid;

Step 2 of confirming whether or not an amount of change in the resonance frequency of the chemical liquid falls within a permissible range of an amount of change in the resonance frequency based on a preset purity of the chemical liquid;

Step 3 of using the chemical liquid confirmed in Step 2 in washing a semiconductor manufacturing apparatus;

Step 4 of extracting a part of the chemical liquid used for washing in Step 3; and

Step 5 of confirming whether or not the amount of change in the resonance frequency of the chemical liquid extracted in Step 4 falls within the permissible range.

24 . The method of measuring cleanliness of a washing solution according to claim 23 , further comprising a concentration step of concentrating the chemical liquid before Step 1.

25 . The method of measuring cleanliness of a washing solution according to claim 23 , further comprising a step of washing the oscillator before Step 1.

26 . The method of measuring cleanliness of a washing solution according to claim 23 ,

wherein in Step 1, the chemical liquid is circulated and supplied to the oscillator, and the oscillator is brought into contact with the chemical liquid to obtain the amount of change in a resonance frequency of the oscillator resulting from the contact with the chemical liquid.

27 . The method of measuring cleanliness of a washing solution according to claim 23 ,

wherein Step 1 is performed while a temperature of the chemical liquid is kept constant.

28 . The method of measuring cleanliness of a washing solution according to claim 23 ,

wherein the chemical liquid in Step 1 contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal elements is 0.01 mass ppq to 10 mass ppb.

29 . The method of measuring cleanliness of a washing solution according to claim 23 ,

wherein the oscillator includes a crystal oscillator sensor including an adsorption layer that adsorbs impurities in the chemical liquid and a crystal oscillator, and

an oscillation unit that oscillates the oscillator at a resonance frequency, and a detection unit that is connected to the crystal oscillator sensor and detects an amount of change in the resonance frequency of the crystal oscillator resulting from the contact with the chemical liquid are provided.

30 . The method of measuring cleanliness of a washing solution according to claim 29 ,

wherein a supply unit that supplies the chemical liquid to the crystal oscillator sensor and brings the chemical liquid into contact with the crystal oscillator sensor is provided, and

Step 1 has a step of feeding the chemical liquid to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

31 . The method of measuring cleanliness of a washing solution according to claim 29 ,

wherein the chemical liquid is allowed to flow in one direction to the crystal oscillator sensor to bring the chemical liquid into contact with the crystal oscillator sensor.

32 . The method of measuring cleanliness of a washing solution according to claim 23 ,

wherein in Step 1, at least a part of a liquid contact portion coming into contact with the chemical liquid is made of a fluorine-based resin.