IP Library Granted Patent US 12669650
Granted Patent B2
US 12669650 · App. 18/643,258 · Granted Jun 30, 2026

Optical waveguide device and method of making the same

Inventors: Motoyuki Fukuhara (Nagano, JP); Hisashi Kaneda (Nagano, JP); Kazunao Yamamoto (Nagano, JP)
Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
G02B6/24G02B6/12G02B6/122G02B6/26G02B6/12004G02B2006/12061G02B6/1223
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Quick Facts
Patent No.
US 12669650
App. No.
18/643,258
Granted
Jun 30, 2026
Kind
B2
Abstract

An optical waveguide device includes an optical waveguide substrate including a first cladding layer disposed on a support, a core layer disposed on the first cladding layer, and a second cladding layer selectively covering the core layer, and a silicon photonic chip including a silicon substrate and a silicon waveguide disposed on one side of the silicon substrate, wherein part or all of a thickness of one end of the silicon waveguide is embedded in the core layer exposed from the second cladding layer, wherein a thickness of the core layer in a place covered with the silicon substrate is less than that of the core layer in a place not covered with the silicon substrate, and wherein a width of the core layer at a point of contact with the silicon substrate is wider than that of the core layer in a place covered with the second cladding layer.

Claims (11)

1 . An optical waveguide device comprising:

an optical waveguide substrate including a support, a first cladding layer disposed on the support, a core layer disposed on the first cladding layer, and a second cladding layer selectively covering the core layer; and

a silicon photonic chip including a silicon substrate and a silicon waveguide disposed on one side of the silicon substrate,

wherein part or all of a thickness of one end of the silicon waveguide in an optical waveguide direction is embedded in the core layer exposed from the second cladding layer, and is optically coupled with the core layer,

wherein a thickness of the core layer in a place covered with the silicon substrate in plan view is less than a thickness of the core layer in a place not covered with the silicon substrate in the plan view, and

wherein in a direction perpendicular to the optical waveguide direction, a first width of the core layer at a point of contact with the silicon substrate is wider than a second width of the core layer in a place covered with the second cladding layer.

2 . The optical waveguide device as claimed in claim 1 , wherein an entire thickness of the one end in the optical waveguide direction is embedded in the core layer exposed from the second cladding layer.

3 . The optical waveguide device as claimed in claim 1 , wherein the first width is 1.05 times or more and 1.2 times or less than the second width.

4 . The optical waveguide device as claimed in claim 1 , wherein the core layer in the place covered with the silicon substrate in the plan view has a portion whose width, as measured in the direction perpendicular to the optical waveguide direction, gradually increases with a distance from the support toward the silicon substrate.

5 . The optical waveguide device as claimed in claim 1 , wherein a width of the core layer in the place covered with the silicon substrate in the plan view, as measured in the direction perpendicular to the optical waveguide direction, is maximum at a point closest to the silicon substrate.

6 . The optical waveguide device as claimed in claim 1 , wherein an end of the core layer situated in the place covered with the silicon substrate protrudes in the optical waveguide direction in a longitudinal cross-section taken in the optical waveguide direction, such that a portion at a point of contact with the silicon waveguide protrudes relative to a portion at a point of contact with the first cladding layer.