Curable resin composition for silicon-containing resist, pattern forming method, method for producing imprint mold, and method for producing semiconductor device
A curable resin composition for silicon-containing resist including a polymerizable compound, and a polymerization initiator, wherein the polymerizable compound includes a siloxane bond in a molecule, and includes at least one polymerizable functional group; and a ratio of oxygen atoms bonded to a single silicon atom, among oxygen atoms bonded to a silicon atom included in the polymerizable compound, is 10 mol % or less; and the curable resin composition for silicon-containing resist does not contain a solvent, and a viscosity is 20 cPs or less.
1 . A curable resin composition for silicon-containing resist comprising a polymerizable compound, and a polymerization initiator,
wherein the polymerizable compound includes a siloxane bond in a molecule, and includes at least one polymerizable functional group; and
a ratio of oxygen atoms bonded to a single silicon atom, among oxygen atoms bonded to a silicon atom included in the polymerizable compound, is 10 mol % or less; and
the curable resin composition for silicon-containing resist does not contain a solvent, and a viscosity of the curable resin composition is 20 cPs or less.
2 . The curable resin composition for silicon-containing resist according to claim 1 , wherein the polymerizable compound includes a spherical structure.
3 . The curable resin composition for silicon-containing resist according to claim 2 , wherein the polymerizable compound does not include an oxygen atom, a nitrogen atom, a phosphorus atom, or a sulfur atom in a linking group between a siloxane polymer portion configuring a main skeleton of the spherical structure, and the polymerizable functional group.
4 . The curable resin composition for silicon-containing resist according to claim 1 , wherein,
an etching rate ratio of a cured product of the curable resin composition for silicon-containing resist is:
when a fluorine gas is used, 1.0 times or more with respect to a standard resist,
when an oxygen gas is used, 0.2 times or less with respect to a standard resist, and
when a chlorine gas is used, 2.0 times or less with respect to a metal chrome layer.
5 . The curable resin composition for silicon-containing resist according to claim 1 , wherein a contact angle with respect to a surface of a standard resist shows 20° or less.
6 . A pattern forming method comprising a pasting step of pasting the curable resin composition for silicon-containing resist according to claim 1 , on a concave and convex structure body with a concave and convex on its surface so as to cover the concave and convex, wherein an etching process is performed in the concave and convex structure body using a cured layer of the curable resin composition for silicon-containing resist.
7 . The pattern forming method according to claim 6 , further comprising a flattening step of obtaining the cured layer by curing the curable resin composition for silicon-containing resist pasted on the concave and convex structure body in a state a flat plate mold is pushed against from upper side.
8 . The pattern forming method according to claim 7 , wherein:
the concave and convex structure body includes a workpiece substrate, a hard mask layer formed on the workpiece substrate, and a core material pattern formed on the hard mask layer and configured by an organic resist material;
the method comprising:
a step of forming a reversal pattern of the core material pattern and supplementary the cured layer, by etching and removing the core material pattern after the flattening step;
a step of forming a hard mask pattern by etching the hard mask layer using the reversal pattern as a mask; and
a step of etching the workpiece substrate using the hard mask pattern as a mask.
9 . The pattern forming method according to claim 7 , wherein:
the concave and convex structure body is a workpiece substrate with a concave and convex on its surface,
the method further comprising:
after the flattening step, a step of forming an organic resist pattern on the cured layer, and
a step of etching processing the cured layer and the workpiece substrate using the organic resist pattern as a mask.
10 . A method for producing an imprint mold, wherein the imprint mold is produced by using the pattern forming method according to claim 6 .
11 . A method for producing a semiconductor device, wherein the semiconductor device is produced by using the pattern forming method according to claim 6 .