Imaging optical unit
An imaging optical unit comprises a plurality of mirrors for imaging an object field into an image field. The imaging optical unit has an image-side numerical aperture greater than 0.55. Each mirror is configured so that it can be measured by a testing optical unit having at least one DOE with a predetermined maximum diameter for test wavefront generation. For the complete measurement of all reflection surfaces of the mirrors, a maximum number of DOEs of the testing optical unit and/or a maximum number of DOE test positions of the at least one DOE of the testing optical unit comes into play, which is no more than five times the number of mirrors in the imaging optical unit. The result is an imaging optical unit in which a testing-optical measurement remains manageable even in the case of a design with an image-side numerical aperture which is relatively large.
1 . An imaging optical unit, comprising:
a plurality of mirrors configured to image an object field into an image field,
wherein:
the imaging optical unit has an image-side numerical aperture greater than 0.55;
each mirror is configured to be measurable by a testing optical unit comprising at least one diffractive optical element (DOE) having a maximum diameter for test wavefront generation;
the imaging optical unit is configured so that, for a complete measurement of all reflection surfaces of the mirrors of the imaging optical unit, the testing optical unit comprises:
i) a maximum number of DOEs that is no more than five times the number of mirrors in the imaging optical unit; and
ii) a maximum number of DOE test positions of the at least one DOE that is used is no more than five times the number of mirrors in the imaging optical unit.
2 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm.
3 . The imaging optical unit of claim 1 , wherein the imaging optical unit is anamorphic optical unit.
4 . The imaging optical unit of claim 1 , wherein the imaging optical unit has a wavefront aberration of no more than 20 mλ.
5 . The imaging optical unit of claim 1 , wherein the imaging optical unit comprises a total of at least eight mirrors.
6 . The imaging optical unit of claim 1 , wherein, for the complete measurement of exactly one reflection surface of the mirrors of the imaging optical unit:
a maximum number of DOEs of the testing optical unit that is used is no more than seven; and/or
a maximum number of DOE test positions of the at least one DOE of the testing optical unit that is used is no more than 7.
7 . The imaging optical unit of claim 1 , wherein the imaging optical unit comprises at least four grazing incidence mirrors.
8 . The imaging optical unit of claim 1 , wherein the imaging optical unit comprises at least three normal incidence mirrors.
9 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm, and the imaging optical unit is an anamorphic optical unit.
10 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm, and the imaging optical unit has a wavefront aberration of no more than 20 mλ.
11 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm, and the imaging optical unit comprises a total of at least eight mirrors.
12 . The imaging optical unit of claim 1 , wherein:
the at least one DOE has a maximum diameter of less than 500 mml and
for the complete measurement of exactly one reflection surface of the mirrors of the imaging optical unit:
a maximum number of DOEs of the testing optical unit that is used is no more than seven; and/or
a maximum number of DOE test positions of the at least one DOE of the testing optical unit that is used is no more than 7.
13 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm, and the imaging optical unit comprises at least four grazing incidence mirrors.
14 . The imaging optical unit of claim 1 , wherein the at least one DOE has a maximum diameter of less than 500 mm, and the imaging optical unit comprises at least three normal incidence mirrors.
15 . The imaging optical unit of claim 1 , wherein the imaging optical unit comprises at least four grazing incidence mirrors, and the imaging optical unit comprises at least three normal incidence mirrors.
16 . The imaging optical unit of claim 15 , wherein the at least one DOE has a maximum diameter of less than 500 mm.
17 . An optical system, comprising:
an imaging optical unit according to claim 1 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light.
18 . An illumination system, comprising:
an optical system, comprising:
an imaging optical unit according to claim 1 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light; and
a light source configured to produce the illumination and imaging light.
19 . An apparatus, comprising:
an illumination system, comprising:
an optical system, comprising:
an imaging optical unit according to claim 1 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light; and
a light source configured to produce the illumination and imaging light,
wherein the apparatus is a projection exposure apparatus for projection lithography.
20 . A method of using a projection exposure apparatus for projection lithography comprising an imaging optical unit and an illumination optical unit, the method comprising:
using the illumination optical unit to illuminate a reticle; and
using the imaging optical unit to an illuminated structure of the reticle onto a light-sensitive material of a wafer,
wherein the imaging optical unit is an imaging optical unit according to claim 1 .
21 . An imaging optical unit, comprising:
a plurality of mirrors configured to image an object field into an image field,
wherein:
the imaging optical unit has an image-side numerical aperture greater than 0.55;
each mirror is configured to be measurable by a testing optical unit comprising at least one diffractive optical element (DOE) having a maximum diameter for test wavefront generation;
the imaging optical unit has a wavefront aberration of no more than 20 m; and
the imaging optical unit is configured so that, for a complete measurement of all reflection surfaces of the mirrors of the imaging optical unit, the testing optical unit comprises:
i) a maximum number of DOEs that is no more than five times the number of mirrors in the imaging optical unit; and/or
ii) a maximum number of DOE test positions of the at least one DOE that is used is no more than five times the number of mirrors in the imaging optical unit.
22 . An optical system, comprising:
an imaging optical unit according to claim 21 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light.
23 . An illumination system, comprising:
an optical system, comprising:
an imaging optical unit according to claim 21 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light; and
a light source configured to produce the illumination and imaging light.
24 . An apparatus, comprising:
an illumination system, comprising:
an optical system, comprising:
an imaging optical unit according to claim 21 ; and
an illumination optical unit configured to illuminate the object field with illumination and imaging light; and
a light source configured to produce the illumination and imaging light,
wherein the apparatus is a projection exposure apparatus for projection lithography.
25 . A method of using a projection exposure apparatus for projection lithography comprising an imaging optical unit and an illumination optical unit, the method comprising:
using the illumination optical unit to illuminate a reticle; and
using the imaging optical unit to an illuminated structure of the reticle onto a light-sensitive material of a wafer,
wherein the imaging optical unit is an imaging optical unit according to claim 21 .