System and method for operating a memory device
The present disclosure relates to methods and devices for performing a read operation in a memory. In one example, a method for operating a memory device includes performing sensing operations on memory cells of the memory device based on at least one voltage or at least one develop time. The memory cells are coupled to a word line. The method further includes identifying a read offset based on results of the sensing operations. The read offset can include a read voltage selected from the at least one voltage, or a read develop time selected from the at least one develop time. The method further includes storing the read offset in the memory device to be directly applied in a read operation on the memory cells.
1 . A method for operating a memory device, comprising:
receiving configuration data, wherein the configuration data comprises a first predetermined bit indicating whether to apply a read offset and a second predetermined bit indicating whether to perform sensing operations to obtain the read offset;
in response to determining that the second predetermined bit indicates to perform sensing operations, performing sensing operations on memory cells of the memory device, wherein the memory cells are coupled to a word line, wherein the sensing operations are based on:
N voltages and a fixed develop time; or
a fixed voltage and N develop times;
identifying, based on results of the sensing operations, the read offset comprising at least one of a read voltage or a read develop time, wherein the read voltage is selected from the N voltages, and wherein the read develop time is selected from the N develop times; and
storing the read offset in the memory device;
receiving a read command; and
in response to determining that the first predetermined bit indicates to apply the read offset, performing a read operation on the memory cells based on the read offset stored in the memory device.
2 . The method of claim 1 , wherein the read offset is stored in a SRAM of the memory device.
3 . The method of claim 1 , further comprising:
receiving configuration data from a memory controller; and
in response to receiving a read command from the memory controller:
determining that the configuration data indicate to apply the read offset; and
performing a read operation on the memory cells based on the read offset stored in the memory device.
4 . The method of claim 3 , wherein the configuration data have four bytes comprising the first predetermined bit and the second predetermined bit, and wherein the first predetermined bit indicates to apply the read offset when a value of the first predetermined bit is 1.
5 . The method of claim 4 , wherein the configuration data are stored in a register of the memory device.
6 . The method of claim 1 , wherein the sensing operations are based on a fixed develop time and the N voltages represented by V 1 , V 2 , . . . , V N (V 1 <V 2 < . . . <V N ), wherein the sensing operations comprise:
for each voltage V i (1 i N):
applying V i to the word line; and
upon discharging sensing nodes coupled to the memory cells for the fixed develop time, determining a size Si of a subset of memory cells from the memory cells, wherein voltages at sensing nodes coupled to the subset of memory cells are higher than a predetermined threshold, and wherein identifying the read offset comprises:
selecting, based on C i (1 i N−1), a voltage V J from the N voltages as the read voltage, wherein C i =S i −S i+1 (1 i N−1), and wherein C J is the smallest number among C i .
7 . The method of claim 1 , wherein the sensing operations are based on a fixed voltage and the N develop times represented by T 1 , T 2 , . . . , T N (T 1 <T 2 < . . . <T N ), wherein the sensing operations comprise:
applying the fixed voltage to the word line; and
for each develop times T i (1 i N), upon discharging sensing nodes coupled to the memory cells for T i , determining a size S i of a subset of memory cells from the memory cells, wherein voltages at sensing nodes coupled to the subset of memory cells are higher than a predetermined threshold, and wherein identifying the read offset comprises:
selecting, based on C i (1 i N−1), a develop time T J from the N develop times as the read develop time, wherein C i =S i −S i+1 (1 i N−1), and wherein C J is the smallest number among C i .
8 . The method of claim 7 , further comprising:
performing a read operation on the memory cells based on the read offset, wherein the read operation comprises:
applying the fixed voltage to the word line; and
upon discharging sensing nodes coupled to the memory cells for the read develop time T J , sensing data from the sensing nodes.
9 . A method for operating a memory system comprising a memory device and a memory controller, the method comprising:
sending, from the memory controller to the memory device, configuration data comprising a first predetermined bit and a second predetermined bit, wherein the first predetermined bit indicates whether to apply a read offset, and the second predetermined bit indicates whether to perform sensing operations, wherein the read offset is generated from the sensing operations and stored in the memory device and comprises at least one of a read voltage or a read develop time; and
in response to receiving a read command from the memory controller by the memory device:
determining, by the memory device, that the first predetermined bit indicates to apply the read offset; and
performing, by the memory device, a read operation based on the read offset.
10 . The method of claim 9 , wherein the read offset is stored in a SRAM of the memory device.
11 . The method of claim 9 , further comprising:
storing the configuration data in a register of the memory device.
12 . The method of claim 9 , wherein the configuration data have four bytes, wherein the first predetermined bit indicates to apply the read offset when a value of the first predetermined bit is 1.
13 . The method of claim 12 , wherein the second predetermined bit indicates to perform sensing operations when a value of the second predetermined bit is 1.
14 . The method of claim 13 , further comprising:
in response to determining that the value of the second predetermined bit is 1, performing, by the memory device, sensing operations to obtain the read offset; and
after performing the sensing operations, setting, by the memory controller, the value of the second predetermined bit to 0.
15 . The method of claim 13 , wherein the sensing operations are performed based on a fixed develop time and N voltages represented by V 1 , V 2 , . . . , V N (V 1 <V 2 < . . . <V N ), wherein the sensing operations comprise:
for each voltage V i (1 i N):
applying V i to a word line, wherein the word line is coupled to memory cells of the memory device; and
upon discharging sensing nodes coupled to the memory cells for the fixed develop time, determining a size S i of a subset of memory cells from the memory cells, wherein voltages at sensing nodes coupled to the subset of memory cells are higher than a predetermined threshold,
wherein a voltage V J is selected, based on C i (1 i N−1), from the N voltages as the read voltage, wherein C i =S i −S i+1 (1 i N−1), and wherein C J is the smallest number among C i .
16 . The method of claim 13 , wherein the sensing operations are performed based on a fixed voltage and N develop times represented by T 1 , T 2 , . . . , T N (T 1 <T 2 < . . . <T N ), wherein the sensing operations comprise:
applying the fixed voltage to a word line, wherein the word line is coupled to memory cells of the memory device; and
for each develop time T i (1 i N), upon discharging sensing nodes coupled to the memory cells for T i , determining a size S i of a subset of memory cells from the memory cells, wherein voltages at sensing nodes coupled to the subset of memory cells are higher than a predetermined threshold,
wherein a develop time T J is selected, based on C i (1 i N−1), from the N develop times as the read develop time, wherein C i =Si−S i+1 (1 i N−1), and wherein C J is the smallest number among C i .
17 . The method of claim 16 , wherein the read operation comprises:
applying the fixed voltage to the word line; and
upon discharging sensing nodes coupled to the memory cells for the read develop time, sensing data from the sensing nodes.
18 . A memory system comprising:
a memory controller, configured to send configuration data comprising a first predetermined bit and a second predetermined bit, wherein the first predetermined bit indicates whether to apply a read offset, and the second predetermined bit indicates whether to perform sensing operations, wherein the read offset is generated from the sensing operations and comprises at least one of a read voltage or a read develop time; and
a memory device coupled with the memory controller and configured to:
store the configuration data received from the memory controller;
determine that the first predetermined bit indicates to apply the read offset; and
perform a read operation based on the read offset.
19 . The memory system of claim 18 , wherein the memory device is further configured to perform the read operation in response to a read command received from the memory controller.
20 . The memory system of claim 18 , wherein the configuration data have four bytes, wherein the first predetermined bit indicates to apply the read offset when a value of the predetermined bit is 1.