IP Library Granted Patent US 12670228
Granted Patent B2
US 12670228 · App. 17/847,491 · Granted Jun 30, 2026

Vector-by-matrix-multiplication array utilizing analog outputs

Inventors: Hieu Van Tran (San Jose, CA); Thuan Vu (San Jose, CA); Stanley Hong (San Jose, CA); Stephen Trinh (San Jose, CA); Mark Reiten (Alamo, CA)
Assignee: Silicon Storage Technology, Inc.
G06N3/065G06F17/16G06N3/048G06G7/16
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Quick Facts
Patent No.
US 12670228
App. No.
17/847,491
Granted
Jun 30, 2026
Kind
B2
Abstract

Numerous examples are disclosed of an artificial neural network that comprises vector-by-matrix multiplication arrays utilizing analog outputs. In one example, a system comprises a vector by matrix multiplication array comprising a plurality of non-volatile memory cells arranged in rows and columns; and an output circuit to receive a respective neuron current from respective columns of the vector by matrix multiplication array and to generate a respective output voltage, the output circuit comprising a neuron scalar to generate a scaled current from the received respective neuron current, and a current-to-voltage converter to convert the scaled current into the respective output voltage.

Claims (31)

1 . A system comprising:

a vector by matrix multiplication array comprising a plurality of non-volatile memory cells arranged in rows and columns; and

an output circuit to receive a respective neuron current from respective columns of the vector by matrix multiplication array and to generate a respective output voltage, the output circuit comprising:

a neuron scalar to generate a scaled current from the received respective neuron current; and

a logarithmic current-to-voltage converter to convert the scaled current into the respective output voltage according to a logarithmic function of the scaled current, the logarithmic current-to-voltage converter comprising:

a reference memory cell comprising a bit line terminal coupled to receive the scaled current, a source line terminal coupled to ground, and a control gate terminal;

an operational amplifier comprising an inverting terminal for receiving the scaled current, a noninverting terminal for receiving a reference voltage, and an output to provide the respective output voltage, wherein the output is coupled to the control gate terminal of the reference memory cell.

2 . The system of claim 1 , wherein the plurality of non-volatile memory cells comprises stacked-gate flash memory cells.

3 . The system of claim 1 , wherein the plurality of non-volatile memory cells comprises split-gate flash memory cells.

4 . A system comprising:

a vector by matrix multiplication array comprising a plurality of non-volatile memory cells arranged in rows and columns; and

an output circuit to receive a respective neuron current from the respective columns of the vector by matrix multiplication array and to generate a respective output voltage, the output circuit comprising:

a neuron scalar to generate a scaled current from the received respective neuron current;

an activation circuit to perform an activation function on the scaled current to generate an activation current; and

a logarithmic current-to-voltage converter to convert the activation current into the respective output voltage according to a logarithmic function of the activation current, the logarithmic current-to-voltage converter comprising:

a reference memory cell comprising a bit line terminal coupled to receive the activation current, a source line terminal coupled to ground, and a control gate terminal;

an operational amplifier comprising an inverting terminal for receiving the activation current, a noninverting terminal for receiving a reference voltage, and an output to provide the respective output voltage, wherein the output is coupled to the control gate terminal of the reference memory cell.

5 . The system of claim 4 , wherein the activation function comprises a sigmoid function.

6 . The system of claim 4 , wherein the activation function comprises a tanh function.

7 . The system of claim 4 , wherein the activation function comprises a rectified linear activation function.

8 . A system comprising:

a vector by matrix multiplication array comprising a plurality of non-volatile memory cells arranged in rows and columns; and

an output circuit to receive a respective neuron current from respective columns of the vector by matrix multiplication array and to generate a respective output voltage, the output circuit comprising:

a neuron scalar to generate a scaled current from the received respective neuron current;

a logarithmic current-to-voltage converter to convert the scaled current into a converted voltage according to a logarithmic function of the scaled current, the logarithmic current-to-voltage converter comprising:

a reference memory cell comprising a bit line terminal coupled to receive the scaled current, a source line terminal coupled to ground, and a control gate terminal;

an operational amplifier comprising an inverting terminal for receiving the scaled current, a noninverting terminal for receiving a reference voltage, and an output to provide the respective output voltage, wherein the output is coupled to the control gate terminal of the reference memory cell; and

an activation circuit to perform an activation function on the converted voltage to generate the respective output voltage.

9 . The system of claim 8 , wherein the activation function comprises a sigmoid function.

10 . The system of claim 8 , wherein the activation function comprises a tanh function.

11 . The system of claim 8 , wherein the activation function comprises a rectified linear activation function.