Memory circuit and write method

1 . A memory circuit comprising:

a plurality of memory cells, each memory cell of the plurality of memory cells comprising:

a gate electrode;

a ferroelectric layer adjacent to the gate electrode;

a channel layer adjacent to the ferroelectric layer, the channel layer comprising indium gallium zinc oxide (IGZO); and

source and drain contacts adjacent to the channel layer opposite the ferroelectric layer,

wherein

the memory circuit is configured to, during write operations to a memory cell of the plurality of memory cells, apply a plurality of voltage levels to the gate electrode relative to a ground voltage level applied to the source and drain contacts,

a first voltage level of the plurality of voltage levels has a positive polarity and a first magnitude, and

a second voltage level of the plurality of voltage levels has a negative polarity and a second magnitude greater than the first magnitude.

2 . The memory circuit of claim 1 , wherein

the channel layer extends from the source contact to the drain contact.

3 . The memory circuit of claim 1 , wherein

each of the gate electrode, the source contact, and the drain contact comprises a metal segment of an interconnect structure of a semiconductor device.

4 . The memory circuit of claim 1 , further comprising:

a plurality of word lines coupled to the gate electrodes of the plurality of memory cells;

a plurality of bit lines coupled to the source contacts of the plurality of memory cells; and

a plurality of select lines coupled to the drain contacts of the plurality of memory cells.

5 . The memory circuit of claim 1 , wherein

the first magnitude has a value ranging from 1.5 volts to 3 volts, and

the second magnitude has a value ranging from 3 volts to 5.5 volts.

6 . The memory circuit of claim 1 , wherein

the memory circuit is configured to apply the first and second voltage levels of the plurality of voltage levels having a same duration.

7 . The memory circuit of claim 1 , wherein

the memory circuit is configured to apply a third voltage level of the plurality of voltage levels to the gate electrode between the first and second voltage levels of the plurality of voltage levels, and

the third voltage level comprises the ground voltage level.

8 . The memory circuit of claim 1 , wherein

the ferroelectric layer comprises one or more of lead zirconate titanate (PZT), hafnium oxide (HfO 2 ), or hafnium zirconium oxide (HZO).

9 . A memory circuit comprising:

a plurality of memory cells, each memory cell of the plurality of memory cells comprising:

a gate electrode comprising one or more n-type work function materials;

a ferroelectric layer adjacent to the gate electrode;

a channel layer adjacent to the ferroelectric layer, the channel layer comprising indium gallium zinc oxide (IGZO); and

source and drain contacts adjacent to the channel layer opposite the ferroelectric layer,

wherein

the memory circuit is configured to, during write operations to a memory cell of the plurality of memory cells, apply a plurality of voltage levels to the gate electrode relative to a ground voltage level applied to the source and drain contacts,

a first voltage level of the plurality of voltage levels has a positive polarity and a first magnitude, and

a second voltage level of the plurality of voltage levels has a negative polarity and a second magnitude greater than the first magnitude.

10 . The memory circuit of claim 9 , wherein

the one or more n-type work function materials are positioned adjacent to the ferroelectric layer.

11 . The memory circuit of claim 9 , wherein

the one or more n-type work function materials comprise one or more of Ti, Ag, TaAl, TaAlC, TiAIN, TaC, TaCN, TaSiN, Mn, or Zr, and

the ferroelectric layer comprises one or more of lead zirconate titanate (PZT), hafnium oxide (HfO 2 ), or hafnium zirconium oxide (HZO).

12 . The memory circuit of claim 9 , wherein

the one or more n-type work function materials are configured to increase a gate electrode work function by a value ranging from 0.1 electron-volts (eV) to 0.2 eV.

13 . The memory circuit of claim 9 , wherein

each of the gate electrode, the ferroelectric layer, and the channel layer extends from a first position above the source contact to a second position above the drain contact.

14 . The memory circuit of claim 9 , wherein

the gate electrode comprises a first metal segment of a word line of a plurality of word lines of the memory circuit,

the source contact comprises a second metal segment of a bit line of a plurality of bit lines of the memory circuit,

the drain contact comprises a third metal segment of a select line of a plurality of select lines of the memory circuit, and

each of the first through third metal lines is part of an interconnect structure of a semiconductor device.

15 . The memory circuit of claim 9 , wherein the memory circuit is configured to

apply the first voltage level of the plurality of voltage levels having the first magnitude for a write operation duration and having a value ranging from 1.5 volts to 3 volts, and

apply the second voltage level of the plurality of voltage levels having the second magnitude for the write operation duration and having a value ranging from 3 volts to 5.5 volts.

16 . A method of writing data in a memory circuit, the method comprising:

applying a plurality of voltage levels to a gate electrode of a memory cell, the memory cell further comprising a ferroelectric layer adjacent to the gate electrode, a channel layer comprising indium gallium zinc oxide (IGZO) adjacent to the ferroelectric layer, and source and drain contacts adjacent to the channel layer opposite the ferroelectric layer,

wherein the applying the plurality of voltage levels comprises:

applying a ground voltage level to each of the source and drain contacts;

applying a first voltage level of the plurality of voltage levels having a positive polarity and a first magnitude; and

applying a second voltage level of the plurality of voltage levels having a negative polarity and a second magnitude greater than the first magnitude.

17 . The method of claim 16 , wherein

the applying the first voltage level of the plurality of voltage levels having the first magnitude comprises the first magnitude having a value ranging from 1.5 volts to 3 volts, and

the applying the second voltage level of the plurality of voltage levels having the second magnitude comprises the second magnitude having a value ranging from 3 volts to 5.5 volts.

18 . The method of claim 16 , wherein

the applying the plurality of voltage levels to the gate electrode comprises applying the ground voltage level to the gate electrode between the applying the first and second voltage levels of the plurality of voltage levels to the gate electrode.

19 . The method of claim 16 , wherein

the applying the plurality of voltage levels to the gate electrode comprises applying the plurality of voltage levels to the gate electrode positioned in an interconnect structure, and

the applying the ground voltage level to each of the source and drain contacts comprises applying the ground voltage level to each of the source and drain contacts positioned in the interconnect structure.

20 . The method of claim 16 , wherein

the applying the plurality of voltage levels to the gate electrode comprises applying the plurality of voltage levels on a word line of a plurality of word lines of the memory circuit,

the applying the ground voltage level to the source contact comprises applying the ground voltage level on a bit line of a plurality of bit lines of the memory circuit, and

the applying the ground voltage level to the drain contact comprises applying the ground voltage level on a select line of a plurality of select lines of the memory circuit.