Execution of prologue sub-operations of a programming operation during data loading
A request to execute a programming operation to program a set of memory cells of the memory array is identified, where the programming operation comprises a set of prologue sub-operations and a set of program sub-operations. A loading process is caused to be executed to load data associated with the programming operation to the memory device. During the loading process, at least a portion of the prologue sub-operations associated with the programming operation are caused to be executed. Following completion of the loading process, the set of program sub-operations of the programming operation are caused to be executed.
1 . A memory device comprising:
a memory array; and
control logic, operatively coupled with the memory array, to perform operations comprising:
identifying a request to execute a programming operation to program a set of memory cells of the memory array, wherein the programming operation comprises a set of prologue sub-operations and a set of program sub-operations;
causing execution of a loading process to load data associated with the programming operation to the memory device;
causing execution of at least a portion of the set of prologue sub-operations associated with the programming operation, wherein the at least the portion of the set of prologue sub-operations and the loading process are executed concurrently; and
following completion of the loading process, causing execution of the set of program sub-operations of the programming operation.
2 . The memory device of claim 1 , wherein the at least the portion of the set of prologue sub-operations executed during the loading process comprises a first portion of the set of prologue sub-operations.
3 . The memory device of claim 2 , the operations further comprising:
following completion of the loading process, causing execution of a second portion of the set of prologue sub-operations.
4 . The memory device of claim 2 , the operations further comprising:
identifying the first portion of the set of prologue sub-operations executed during the loading process; and
based on the identifying, determining a remaining portion of the set of prologue sub-operations; and
following completion of the loading process, causing execution of the remaining portion of the set of prologue sub-operations prior to causing execution of the set of program sub-operations.
5 . The memory device of claim 1 , the operations further comprising:
sensing a voltage level associated with the set of memory cells to confirm completion of the programming operation.
6 . The memory device of claim 1 , wherein the set of prologue sub-operations comprises one or more of a variable initialization sub-operation, a temperature sensor initialization sub-operation, or a page buffer initialization sub-operation.
7 . The memory device of claim 1 , wherein the set of program sub-operations comprises one or more of applying one or more programming pulses, one or more program verify sub-operations, or a voltage discharge sub-operation.
8 . A method comprising:
identifying, by a processing device, a request to execute a programming operation to program a set of memory cells of a memory device, wherein the programming operation comprises a set of prologue sub-operations and a set of program sub-operations;
causing execution of a loading process to load data associated with the programming operation to the memory device;
causing execution of at least a portion of the set of prologue sub-operations associated with the programming operation, wherein the at least the portion of the set of prologue sub-operations and the loading process are executed concurrently; and
following completion of the loading process, causing execution of the set of program sub-operations of the programming operation.
9 . The method of claim 8 , wherein the at least the portion of the set of prologue sub-operations executed during the loading process comprises a first portion of the set of prologue sub-operations.
10 . The method of claim 9 , further comprising following completion of the loading process, causing execution of a second portion of the set of prologue sub-operations.
11 . The method of claim 9 , further comprising:
identifying the first portion of the set of prologue sub-operations executed during the loading process;
based on the identifying, determining a remaining portion of the set of prologue sub-operations; and
following completion of the loading process, causing execution of the remaining portion of the set of prologue sub-operations prior to causing execution of the set of program sub-operations.
12 . The method of claim 11 , further comprising sensing a voltage level associated with the set of memory cells to confirm completion of the programming operation.
13 . The method of claim 8 , wherein the set of prologue sub-operations comprises one or more of a variable initialization sub-operation, a temperature sensor initialization sub-operation, or a page buffer initialization sub-operation.
14 . The method of claim 8 , wherein the set of program sub-operations comprises one or more of applying one or more programming pulses, one or more program verify sub-operations, or a voltage discharge sub-operation.
15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
identifying a request to execute a programming operation to program a set of memory cells of a memory device, wherein the programming operation comprises a set of prologue sub-operations and a set of program sub-operations;
causing execution of a loading process to load data associated with the programming operation to the memory device;
causing execution of at least a portion of the set of prologue sub-operations associated with the programming operation, wherein the at least the portion of the set of prologue sub-operations and the loading process are executed concurrently; and
following completion of the loading process, causing execution of the set of program sub-operations of the programming operation.
16 . The non-transitory computer-readable storage medium of claim 15 , the operations further comprising sensing a voltage level associated with the set of memory cells to confirm completion of the programming operation.
17 . The non-transitory computer-readable storage medium of claim 15 , wherein the at least the portion of the set of prologue sub-operations executed during the loading process comprises a first portion of the set of prologue sub-operations.
18 . The non-transitory computer-readable storage medium of claim 17 , the operations further comprising following completion of the loading process, causing execution of a second portion of the set of prologue sub-operations.
19 . The non-transitory computer-readable storage medium of claim 17 , the operations further comprising:
identifying the first portion of the set of prologue sub-operations executed during the loading process;
based on the identifying, determining a remaining portion of the set of prologue sub-operations; and
following completion of the loading process, causing execution of the remaining portion of the set of prologue sub-operations prior to causing execution of the set of program sub-operations.
20 . The non-transitory computer-readable storage medium of claim 15 , wherein the set of prologue sub-operations comprises one or more of a variable initialization sub-operation, a temperature sensor initialization sub-operation, or a page buffer initialization sub-operation; and wherein the set of program sub-operations comprises one or more of applying one or more programming pulses, one or more program verify sub-operations, or a voltage discharge sub-operation.