RF impedance matching network with series-connected diode switches
View Patent ↗In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit includes at least one electronically variable capacitor (EVC). Each EVC includes fixed capacitors, each of the fixed capacitors having a corresponding switching circuit for switching in and out the fixed capacitor to alter a total capacitance of the EVC. Each switching circuit includes a switch operably coupled to the fixed capacitor to cause the switching in and out of the fixed capacitor. The switch includes at least one string of series-connected PIN or NIP diodes. For each string, at least one of the diodes of the string has a balancing capacitor parallel to the diode.
1 . A radio frequency (RF) impedance matching circuit comprising:
an RF input configured to operably couple to an RF source providing an RF signal;
an RF output configured to operably couple to a plasma chamber;
at least one electronically variable capacitor (EVC), wherein each EVC of the at least one EVC comprises fixed capacitors, each of the fixed capacitors having a corresponding switching circuit for switching in and out the fixed capacitor to alter a total capacitance of the EVC; and
a control circuit configured to cause the switching in and out of the fixed capacitors of each EVC to enable an impedance match;
wherein each switching circuit for each fixed capacitor of each EVC comprises:
a switch operably coupled to the fixed capacitor to cause the switching in and out of the fixed capacitor, the switch comprising at least two strings of series-connected diodes, each of the diodes of the series-connected diodes being a PIN diode or an NIP diode;
wherein the diodes of the at least two strings are arranged in an array such that a first diode of a first string is parallel to first diodes of each of the other strings, and a second diode of the first string is coupled parallel to second diodes of each of the other strings; and
wherein the first diodes of each of the at least two strings shares a common first balancing capacitor.
2 . The impedance matching circuit of claim 1 :
wherein the second diodes of each of the strings shares a common second balancing capacitor.
3 . The impedance matching circuit of claim 2 wherein the first diodes of each of the strings share a common first balancing resistor coupled parallel to the first diodes, and the second diodes of each of the strings share a common second balancing resistor coupled parallel to the second diodes.
4 . The impedance matching circuit of claim 3 wherein the first and second balancing resistors have equal resistance values.
5 . The impedance matching circuit of claim 2 wherein the first balancing capacitor has a capacitance value different from a capacitance value of the second balancing capacitor.
6 . The impedance matching circuit of claim 1 wherein each of the series-connected diodes is positioned on a substrate that conducts heat but does not conduct electricity, the substrate being positioned on a heat sink that conducts electricity.
7 . The impedance matching circuit of claim 6 wherein the substrate comprises a ceramic material.
8 . The impedance matching circuit of claim 1 wherein the value of each balancing capacitor is based on the anticipated value of one or more parasitic capacitances in the switching circuit when the balancing capacitors are not present.
9 . A method of matching an impedance comprising:
coupling a radio frequency (RF) input of a matching circuit to an RF source providing an RF signal;
coupling an RF output of the matching circuit to a plasma chamber, wherein the matching circuit comprises:
at least one electronically variable capacitor (EVC), wherein each EVC of the at least one EVC comprises fixed capacitors, each of the fixed capacitors having a corresponding switching circuit for switching in and out the fixed capacitor to alter a total capacitance of the EVC; and
a control circuit configured to cause the switching in and out of the fixed capacitors of each EVC to enable an impedance match;
wherein each switching circuit for each fixed capacitor of each EVC comprises:
a switch operably coupled to the fixed capacitor to cause the switching in and out of the fixed capacitor, the switch comprising at least two strings of series-connected diodes, each of the diodes of the series-connected diodes being a PIN diode or an NIP diode
wherein the diodes of the at least two strings are arranged in an array such that a first diode of a first string is parallel to first diodes of each of the other strings, and a second diode of the first string is coupled parallel to second diodes of each of the other strings; and
wherein the first diodes of each of the at least two strings shares a common first balancing capacitor; and
matching an impedance by at least one of the switching circuits of the at least one EVC switching in or out its corresponding fixed capacitor to alter a total capacitance of the EVC.
10 . The method of claim 9 :
wherein the second diodes of each of the strings shares a common second balancing capacitor.
11 . The method of claim 10 wherein the first diodes of each of the strings share a common first balancing resistor coupled parallel to the first diodes, and the second diodes of each of the strings share a common second balancing resistor coupled parallel to the second diodes.
12 . The method of claim 11 wherein the first and second balancing resistors have equal resistance values.
13 . The method of claim 10 wherein the first balancing capacitor has a capacitance value different from a capacitance value of the second balancing capacitor.
14 . The method of any of claim 9 wherein each of the series-connected diodes is positioned on a substrate that conducts heat but does not conduct electricity, the substrate being positioned on a heat sink that conducts electricity.
15 . The method of claim 14 wherein the substrate comprises a ceramic material.
16 . The method of claim 9 wherein the value of each balancing capacitor is based on the anticipated value of one or more parasitic capacitances in the switching circuit when the balancing capacitors are not present.
17 . A semiconductor processing tool comprising:
a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate; and
an impedance matching circuit operably coupled to the plasma chamber, the matching circuit comprising:
an RF input configured to operably couple to an RF source providing an RF signal;
an RF output configured to operably couple to the plasma chamber;
at least one electronically variable capacitor (EVC), wherein each EVC of the at least one EVC comprises fixed capacitors, each of the fixed capacitors having a corresponding switching circuit for switching in and out the fixed capacitor to alter a total capacitance of the EVC; and
a control circuit configured to cause the switching in and out of the fixed capacitors of each EVC to enable an impedance match;
wherein each switching circuit for each fixed capacitor of each EVC comprises:
a switch operably coupled to the fixed capacitor to cause the switching in and out of the fixed capacitor, the switch comprising at least two strings of series-connected diodes, each of the diodes of the series-connected diodes being a PIN diode or an NIP diode;
wherein the diodes of the at least two strings are arranged in an array such that a first diode of a first string is parallel to first diodes of each of the other strings, and a second diode of the first string is coupled parallel to second diodes of each of the other strings; and
wherein the first diodes of each of the at least two strings shares a common first balancing capacitor.